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Class Information
Number: 257/E29.222
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Bipolar device (epo) > Thyristor-type device (e.g., having four-zone regenerative action) (epo) > Having built-in localized breakdown/breakover region (epo)
Description: This subclass is indented under subclass E29.211. This subclass is substantially the same in scope as ECLA classification H01L29/74C.










Patents under this class:

Patent Number Title Of Patent Date Issued
7943959 Low capacitance semiconductor device May. 17, 2011
7932561 Semiconductor apparatus Apr. 26, 2011
7897998 III-nitride power semiconductor device Mar. 1, 2011
7719026 Un-assisted, low-trigger and high-holding voltage SCR May. 18, 2010
7638816 Epitaxial surge protection device Dec. 29, 2009
7190006 Symmetrical planar diac Mar. 13, 2007
6373079 Thyristor with breakdown region Apr. 16, 2002
6271545 Asymmetrical thyristor with blocking/sweep voltage independent of temperature behavior Aug. 7, 2001
5627387 Overvoltage self-protection semiconductor device, method of fabrication thereof and semiconductor circuit using the same May. 6, 1997
5455434 Thyristor with breakdown region Oct. 3, 1995
5420045 Process for manufacturing thyristor with adjustable breakover voltage May. 30, 1995
5243205 Semiconductor device with overvoltage protective function Sep. 7, 1993
5049965 Thyristor having adjustable breakover voltage and method of manufacture Sep. 17, 1991
5003369 Thyristor of overvoltage self-protection type Mar. 26, 1991
4987087 Process for manufacturing a thyristor with proton irradiation Jan. 22, 1991
4929563 Method of manufacturing semiconductor device with overvoltage self-protection May. 29, 1990
4907056 Semiconductor component comprising a planar pn-junction Mar. 6, 1990
4901130 Protection thyristor with auxiliary gate Feb. 13, 1990
4897706 Thyristor protected against breakover firing Jan. 30, 1990
4646121 Thyristor with a self-protection function for breakover turn-on failure Feb. 24, 1987
4559551 Semiconductor device Dec. 17, 1985
4555845 Temperature stable self-protected thyristor and method of producing Dec. 3, 1985
4516315 Method of making a self-protected thyristor May. 14, 1985
4514898 Method of making a self protected thyristor May. 7, 1985
4314266 Thyristor with voltage breakover current control separated from main emitter by current limit region Feb. 2, 1982
4292646 Semiconductor thyristor device having integral ballast means Sep. 29, 1981
4240091 Semiconductor controlled rectifier device with small area dV/dt self-protecting means Dec. 16, 1980
4176371 Thyristor fired by overvoltage Nov. 27, 1979
4165517 Self-protection against breakover turn-on failure in thyristors through selective base lifetime control Aug. 21, 1979
4087834 Self-protecting semiconductor device May. 2, 1978
4079403 Thyristor device with self-protection against breakover turn-on failure Mar. 14, 1978
4012761 Self-protected semiconductor device Mar. 15, 1977











 
 
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