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Class Information
Number: 257/E29.221
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Bipolar device (epo) > Thyristor-type device (e.g., having four-zone regenerative action) (epo) > Combined structurally with at least one other device (epo) > Combined with field-effect transistor (epo)
Description: This subclass is indented under subclass E29.217. This subclass is substantially the same in scope as ECLA classification H01L29/74B6.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7268373 |
Thyristor-based memory and its method of operation |
Sep. 11, 2007 |
| 7183590 |
Horizontal tram |
Feb. 27, 2007 |
| 6965131 |
Thyristor switch with turn-off current shunt, and operating method |
Nov. 15, 2005 |
| 6313485 |
Gate-controlled thyristor |
Nov. 6, 2001 |
| 6137140 |
Integrated SCR-LDMOS power device |
Oct. 24, 2000 |
| RE36770 |
MOS-controlled high-power thyristor |
Jul. 11, 2000 |
| 5413313 |
Integrated power switch structure having a vertical thyristor controlled by a lateral MOS transistor |
May. 9, 1995 |
| 5387805 |
Field controlled thyristor |
Feb. 7, 1995 |
| 5234851 |
Small cell, low contact assistance rugged power field effect devices and method of fabrication |
Aug. 10, 1993 |
| 5119153 |
Small cell low contact resistance rugged power field effect devices and method of fabrication |
Jun. 2, 1992 |
| 5093705 |
Thyristor with reduced central zone thickness |
Mar. 3, 1992 |
| 5030581 |
Method of fabricating a semiconductor apparatus |
Jul. 9, 1991 |
| 4992844 |
Semiconductor device |
Feb. 12, 1991 |
| 4982259 |
Sensitive thyristor having improved noise-capability |
Jan. 1, 1991 |
| 4943835 |
Semiconductor device including protecting MOS transistor |
Jul. 24, 1990 |
| 4942443 |
Thyristor with auxiliary emitter electrode and short-circuit regions and method |
Jul. 17, 1990 |
| 4888627 |
Monolithically integrated lateral insulated gate semiconductor device |
Dec. 19, 1989 |
| 4801985 |
Monolithically integrated semiconductor device and process for fabrication |
Jan. 31, 1989 |
| 4758871 |
Thyristor with multiple groups of insulated control electrodes |
Jul. 19, 1988 |
| 4755861 |
Light-firable thyristor |
Jul. 5, 1988 |
| 4737834 |
Thyristor with controllable emitter short-circuit paths inserted in the emitter |
Apr. 12, 1988 |
| 4613766 |
Thyristor having controllable emitter short circuits |
Sep. 23, 1986 |
| 4612562 |
PNPN switch device with capacitor formed outside active device areas |
Sep. 16, 1986 |
| 4612449 |
Thyristor having a secondary emitter electrode and a method for operating the same |
Sep. 16, 1986 |
| 4611128 |
Triac having a multilayer semiconductor body |
Sep. 9, 1986 |
| 4581543 |
Semiconductor switch having a disconnectible thyristor |
Apr. 8, 1986 |
| 4509068 |
Thyristor with controllable emitter short circuits and trigger amplification |
Apr. 2, 1985 |
| 4502072 |
FET Controlled thyristor |
Feb. 26, 1985 |
| 4502071 |
FET Controlled thyristor |
Feb. 26, 1985 |
| 4502070 |
FET Controlled thyristor |
Feb. 26, 1985 |
| 4500902 |
FET Controlled thyristor |
Feb. 19, 1985 |
| 4466010 |
Thyristor with enhancement and depletion mode FET control for improved switch behavior and method of using same |
Aug. 14, 1984 |
| 4464673 |
Semiconductor component |
Aug. 7, 1984 |
| 4454527 |
Thyristor having controllable emitter short circuits and a method for its operation |
Jun. 12, 1984 |
| 4419683 |
Thyristor having a controllable emitter short circuit |
Dec. 6, 1983 |
| 4244000 |
PNPN Semiconductor switches |
Jan. 6, 1981 |
| 4224634 |
Externally controlled semiconductor devices with integral thyristor and bridging FET components |
Sep. 23, 1980 |
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