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Class Information
Number: 257/E29.221
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Bipolar device (epo) > Thyristor-type device (e.g., having four-zone regenerative action) (epo) > Combined structurally with at least one other device (epo) > Combined with field-effect transistor (epo)
Description: This subclass is indented under subclass E29.217. This subclass is substantially the same in scope as ECLA classification H01L29/74B6.

Patents under this class:

Patent Number Title Of Patent Date Issued
8519432 Semiconductor switch Aug. 27, 2013
8497526 Low triggering voltage DIAC structure Jul. 30, 2013
8188540 High breakdown voltage double-gate semiconductor device May. 29, 2012
7915638 Symmetric bidirectional silicon-controlled rectifier Mar. 29, 2011
7893457 Bipolar mosfet devices and methods for their use Feb. 22, 2011
7268373 Thyristor-based memory and its method of operation Sep. 11, 2007
7183590 Horizontal tram Feb. 27, 2007
6965131 Thyristor switch with turn-off current shunt, and operating method Nov. 15, 2005
6313485 Gate-controlled thyristor Nov. 6, 2001
6137140 Integrated SCR-LDMOS power device Oct. 24, 2000
RE36770 MOS-controlled high-power thyristor Jul. 11, 2000
5413313 Integrated power switch structure having a vertical thyristor controlled by a lateral MOS transistor May. 9, 1995
5387805 Field controlled thyristor Feb. 7, 1995
5234851 Small cell, low contact assistance rugged power field effect devices and method of fabrication Aug. 10, 1993
5119153 Small cell low contact resistance rugged power field effect devices and method of fabrication Jun. 2, 1992
5093705 Thyristor with reduced central zone thickness Mar. 3, 1992
5030581 Method of fabricating a semiconductor apparatus Jul. 9, 1991
4992844 Semiconductor device Feb. 12, 1991
4982259 Sensitive thyristor having improved noise-capability Jan. 1, 1991
4943835 Semiconductor device including protecting MOS transistor Jul. 24, 1990
4942443 Thyristor with auxiliary emitter electrode and short-circuit regions and method Jul. 17, 1990
4888627 Monolithically integrated lateral insulated gate semiconductor device Dec. 19, 1989
4801985 Monolithically integrated semiconductor device and process for fabrication Jan. 31, 1989
4758871 Thyristor with multiple groups of insulated control electrodes Jul. 19, 1988
4755861 Light-firable thyristor Jul. 5, 1988
4737834 Thyristor with controllable emitter short-circuit paths inserted in the emitter Apr. 12, 1988
4613766 Thyristor having controllable emitter short circuits Sep. 23, 1986
4612562 PNPN switch device with capacitor formed outside active device areas Sep. 16, 1986
4612449 Thyristor having a secondary emitter electrode and a method for operating the same Sep. 16, 1986
4611128 Triac having a multilayer semiconductor body Sep. 9, 1986
4581543 Semiconductor switch having a disconnectible thyristor Apr. 8, 1986
4509068 Thyristor with controllable emitter short circuits and trigger amplification Apr. 2, 1985
4502072 FET Controlled thyristor Feb. 26, 1985
4502071 FET Controlled thyristor Feb. 26, 1985
4502070 FET Controlled thyristor Feb. 26, 1985
4500902 FET Controlled thyristor Feb. 19, 1985
4466010 Thyristor with enhancement and depletion mode FET control for improved switch behavior and method of using same Aug. 14, 1984
4464673 Semiconductor component Aug. 7, 1984
4454527 Thyristor having controllable emitter short circuits and a method for its operation Jun. 12, 1984
4419683 Thyristor having a controllable emitter short circuit Dec. 6, 1983
4244000 PNPN Semiconductor switches Jan. 6, 1981
4224634 Externally controlled semiconductor devices with integral thyristor and bridging FET components Sep. 23, 1980

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