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Class Information
Number: 257/E29.22
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Bipolar device (epo) > Thyristor-type device (e.g., having four-zone regenerative action) (epo) > Combined structurally with at least one other device (epo) > Combined with diode (epo) > Antiparallel diode (epo)
Description: This subclass is indented under subclass E29.219. This subclass is substantially the same in scope as ECLA classification H01L29/74B4B.










Patents under this class:

Patent Number Title Of Patent Date Issued
8564097 Reverse conducting IGBT Oct. 22, 2013
8334179 Semiconductor device and method for its production Dec. 18, 2012
7342282 Compact SCR device and method for integrated circuits Mar. 11, 2008
6570193 Reverse conducting thyristor device, pressure-connection type semiconductor device and semiconductor substrate May. 27, 2003
6388276 Reverse conducting thyristor May. 14, 2002
6326648 Power switch with a controlled DI/DT Dec. 4, 2001
6188267 Normally conducting dual thyristor Feb. 13, 2001
5861639 Breakover-triggered dipole component having a controlled sensitivity Jan. 19, 1999
5835985 Reverse conducting gate-turnoff thyristor Nov. 10, 1998
5696391 Overload protection circuit Dec. 9, 1997
5682044 Reverse conducting thyristor with a planar-gate, buried-gate, or recessed-gate structure Oct. 28, 1997
5596292 A.C. switch triggered at a predetermined half-period Jan. 21, 1997
5594261 Device for isolating parallel sub-elements with reverse conducting diode regions Jan. 14, 1997
5569940 AC switch triggered at a predetermined half-period Oct. 29, 1996
5471074 A.c. switch triggered at a predetermined half-period Nov. 28, 1995
5428230 Reverse conducting gate turn-off thyristor Jun. 27, 1995
5401984 Semiconductor component for transient voltage limiting Mar. 28, 1995
5393995 Semiconductor thyristor device with recess Feb. 28, 1995
5346849 Method of making a groove structure for isolation between elements comprising a GTO thyristor Sep. 13, 1994
5304823 An equipment protection semiconductor integrated circuit Apr. 19, 1994
5281847 Groove structure for isolating elements comprising a GTO structure Jan. 25, 1994
5105244 Gate turn-off power semiconductor component Apr. 14, 1992
5047824 Reverse conducting gate turn-off thyristor Sep. 10, 1991
4791470 Reverse conducting gate turn-off thyristor device Dec. 13, 1988
4742382 Semiconductor component May. 3, 1988
4377816 Semiconductor element with zone guard rings Mar. 22, 1983
4357621 Reverse conducting thyristor with specific resistor structures between main cathode and amplifying, reverse conducting portions Nov. 2, 1982
4296427 Reverse conducting amplified gate thyristor with plate-like separator section Oct. 20, 1981
4243999 Gate turn-off thyristor Jan. 6, 1981
4236169 Thyristor device Nov. 25, 1980
4224083 Dynamic isolation of conductivity modulation states in integrated circuits Sep. 23, 1980
4150391 Gate-controlled reverse conducting thyristor Apr. 17, 1979
4118257 Method for producing a semiconductor device having monolithically integrated units in a semiconductor body Oct. 3, 1978
4009059 Reverse conducting thyristor and process for producing the same Feb. 22, 1977
4007475 Semiconductor switching device Feb. 8, 1977
3988772 Current isolation means for integrated power devices Oct. 26, 1976
3978514 Diode-integrated high speed thyristor Aug. 31, 1976
3947864 Diode-integrated thyristor Mar. 30, 1976











 
 
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