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Class Information
Number: 257/E29.219
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Bipolar device (epo) > Thyristor-type device (e.g., having four-zone regenerative action) (epo) > Combined structurally with at least one other device (epo) > Combined with diode (epo)
Description: This subclass is indented under subclass E29.217. This subclass is substantially the same in scope as ECLA classification H01L29/74B4.










Sub-classes under this class:

Class Number Class Name Patents
257/E29.22 Antiparallel diode (epo) 38


Patents under this class:

Patent Number Title Of Patent Date Issued
8502269 Semiconductor device Aug. 6, 2013
8093623 Semiconductor integrated circuit Jan. 10, 2012
8017999 Semiconductor device Sep. 13, 2011
7667243 Local ESD protection for low-capicitance applications Feb. 23, 2010
7342282 Compact SCR device and method for integrated circuits Mar. 11, 2008
6696730 Electrostatic discharge protection device for semiconductor integrated circuit, method for producing the same, and electrostatic discharge protection circuit using the same Feb. 24, 2004
6524893 Electrostatic discharge protection device for semiconductor integrated circuit, method for producing the same, and electrostatic discharge protection circuit using the same Feb. 25, 2003
6338986 Electrostatic discharge protection device for semiconductor integrated circuit method for producing the same and electrostatic discharge protection circuit using the same Jan. 15, 2002
6031254 Monolithic assembly of an IGBT transistor and a fast diode Feb. 29, 2000
5969922 Failure indicator for a protection component Oct. 19, 1999
5751022 Thyristor May. 12, 1998
5719411 Three-terminal MOS-gate controlled thyristor structures with current saturation characteristics Feb. 17, 1998
5696391 Overload protection circuit Dec. 9, 1997
5602404 Low voltage triggering silicon controlled rectifier structures for ESD protection Feb. 11, 1997
5587595 Lateral field-effect-controlled semiconductor device on insulating substrate Dec. 24, 1996
5444272 Three-terminal thyristor with single MOS-gate controlled characteristics Aug. 22, 1995
5293051 Photoswitching device including a MOSFET for detecting zero voltage crossing Mar. 8, 1994
5285100 Semiconductor switching device Feb. 8, 1994
4969027 Power bipolar transistor device with integral antisaturation diode Nov. 6, 1990
4748533 Integrated circuit for the protection of subscriber lines against overvoltages May. 31, 1988
4618781 Gate turn-off thyristor construction Oct. 21, 1986
4509068 Thyristor with controllable emitter short circuits and trigger amplification Apr. 2, 1985
4394677 Thyristor for low-loss triggering of short impulses with Schottky contact to control gate electrode Jul. 19, 1983
4238761 Integrated gate assisted turn-off, amplifying gate thyristor with narrow lipped turn-off diode Dec. 9, 1980
4224634 Externally controlled semiconductor devices with integral thyristor and bridging FET components Sep. 23, 1980
4208669 Controllable semiconductor rectifier with interference potential compensation Jun. 17, 1980
4054893 Semiconductor switching devices utilizing nonohmic current paths across P-N junctions Oct. 18, 1977
4040170 Integrated gate assisted turn-off, amplifying gate thyristor, and a method for making the same Aug. 9, 1977











 
 
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