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Class Information
Number: 257/E29.218
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Bipolar device (epo) > Thyristor-type device (e.g., having four-zone regenerative action) (epo) > Combined structurally with at least one other device (epo) > Combined with capacitor or resistor (epo)
Description: This subclass is indented under subclass E29.217. This subclass is substantially the same in scope as ECLA classification H01L29/74B2.

Patents under this class:

Patent Number Title Of Patent Date Issued
8502269 Semiconductor device Aug. 6, 2013
8482046 Concentric or nested container capacitor structure for integrated circuits Jul. 9, 2013
8441031 ESD protection device May. 14, 2013
8395199 Systems and methods for fabricating self-aligned memory cell Mar. 12, 2013
8344386 Laminated thin-film device, manufacturing method thereof, and circuit Jan. 1, 2013
8106438 Stud capacitor device and fabrication method Jan. 31, 2012
8089135 Back-end-of-line wiring structures with integrated passive elements and design structures for a radiofrequency integrated circuit Jan. 3, 2012
8058700 Surge overcurrent protection for solid state, smart, highside, high current, power switch Nov. 15, 2011
8017985 Concentric or nested container capacitor structure for integrated circuits Sep. 13, 2011
7977708 HBT/FET process integration Jul. 12, 2011
7723767 High dielectric constant transition metal oxide materials May. 25, 2010
7619271 Deep trench device with single sided connecting structure and fabrication method thereof Nov. 17, 2009
7348654 Capacitor and inductor scheme with e-fuse application Mar. 25, 2008
7274047 Silicon controlled rectifier electrostatic discharge protection device for power supply lines with powerdown mode of operation Sep. 25, 2007
7122888 Semiconductor device, electrical inspection method thereof, and electronic apparatus including the semiconductor device Oct. 17, 2006
6963088 Semiconductor component Nov. 8, 2005
6043516 Semiconductor component with scattering centers within a lateral resistor region Mar. 28, 2000
5614738 Insulated gate thyristor having a polysilicon resistor connected to its base Mar. 25, 1997
5614771 Extended high voltage SCR switch Mar. 25, 1997
5285100 Semiconductor switching device Feb. 8, 1994
5144400 Power semiconductor device with switch-off facility Sep. 1, 1992
5010384 Gate turn-off thyristor with resistance layers Apr. 23, 1991
4982259 Sensitive thyristor having improved noise-capability Jan. 1, 1991
4942446 Semiconductor device for switching, and the manufacturing method therefor Jul. 17, 1990
4905070 Semiconductor device exhibiting no degradation of low current gain Feb. 27, 1990
4803538 Thyristor with adjustable base-to-emitter resistance Feb. 7, 1989
4760432 Thyristor having controllable emitter-base shorts Jul. 26, 1988
4622572 High voltage semiconductor device having an improved DV/DT capability and plasma spreading Nov. 11, 1986
4618781 Gate turn-off thyristor construction Oct. 21, 1986
4612562 PNPN switch device with capacitor formed outside active device areas Sep. 16, 1986
4315274 Thyristor with switchable capacitor between auxiliary thyristor cathode and main thyristor gate regions Feb. 9, 1982
4314266 Thyristor with voltage breakover current control separated from main emitter by current limit region Feb. 2, 1982
4302763 Semiconductor device Nov. 24, 1981
4292646 Semiconductor thyristor device having integral ballast means Sep. 29, 1981
4244000 PNPN Semiconductor switches Jan. 6, 1981
4127863 Gate turn-off type thyristor with separate semiconductor resistive wafer providing emitter ballast Nov. 28, 1978
4109274 Semiconductor switching device with breakdown diode formed in the bottom of a recess Aug. 22, 1978
4086612 Thyristor Apr. 25, 1978
3979767 Multilayer P-N junction semiconductor switching device having a low resistance path across said P-N junction Sep. 7, 1976

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