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Class Information
Number: 257/E29.216
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Bipolar device (epo) > Thyristor-type device (e.g., having four-zone regenerative action) (epo) > With turn on by field effect (epo)
Description: This subclass is indented under subclass E29.211. This subclass is substantially the same in scope as ECLA classification H01L29/749.

Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
8618576 Semiconductor device with back side metal structure Dec. 31, 2013
8471294 GaN-based nitric oxide sensors and methods of making and using the same Jun. 25, 2013
7968381 Fin thyristor-based semiconductor device Jun. 28, 2011
7893457 Bipolar mosfet devices and methods for their use Feb. 22, 2011
7825473 Initial-on SCR device for on-chip ESD protection Nov. 2, 2010
7274047 Silicon controlled rectifier electrostatic discharge protection device for power supply lines with powerdown mode of operation Sep. 25, 2007
7145186 Memory cell with trenched gated thyristor Dec. 5, 2006
7084438 Metal insulator power semiconductor component (MIS) and a method for producing the same Aug. 1, 2006
6965131 Thyristor switch with turn-off current shunt, and operating method Nov. 15, 2005
6929988 Method of making an ultra dense trench-gated power device with the reduced drain-source feedback capacitance and miller charge Aug. 16, 2005
6913955 Method of manufacturing a thyristor device with a control port in a trench Jul. 5, 2005
6891205 Stability in thyristor-based memory device May. 10, 2005
6818482 Method for trench isolation for thyristor-based device Nov. 16, 2004
6803627 Reverse-blocking power semiconductor component having a region short-circuited to a drain-side part of a body zone Oct. 12, 2004
6724043 Bipolar MOSFET device Apr. 20, 2004
6696323 Method of manufacturing semiconductor device having trench filled up with gate electrode Feb. 24, 2004
6683346 Ultra dense trench-gated power-device with the reduced drain-source feedback capacitance and Miller charge Jan. 27, 2004
6673681 Process for forming MOS-gated power device having segmented trench and extended doping zone Jan. 6, 2004
6660569 Method for producing a power semiconductor device with a stop zone Dec. 9, 2003
6653175 Stability in thyristor-based memory device Nov. 25, 2003
6614077 Semiconductor device improved in ESD reliability Sep. 2, 2003
6525375 Semiconductor device having trench filled up with gate electrode Feb. 25, 2003
6521918 Semiconductor device and driving method thereof Feb. 18, 2003
6462359 Stability in thyristor-based memory device Oct. 8, 2002
6455379 Power trench transistor device source region formation using silicon spacer Sep. 24, 2002
6441408 Power semiconductor component for high reverse voltages Aug. 27, 2002
6426520 Semiconductor device Jul. 30, 2002
6423987 Self-protect thyristor Jul. 23, 2002
6326648 Power switch with a controlled DI/DT Dec. 4, 2001
6313485 Gate-controlled thyristor Nov. 6, 2001
6278140 Insulated gate thyristor Aug. 21, 2001
6259134 Trench thyristor with improved breakdown voltage characteristics Jul. 10, 2001
6246090 Power trench transistor device source region formation using silicon spacer Jun. 12, 2001
6236069 Insulated-gate thyristor May. 22, 2001
6229196 Semiconductor device and fabrication method thereof May. 8, 2001
6188267 Normally conducting dual thyristor Feb. 13, 2001
6169299 Semiconductor device Jan. 2, 2001
6118141 Emitter-switched thyristor Sep. 12, 2000
6091087 Insulated gate thyristor Jul. 18, 2000
6054728 Insulated gate thyristor Apr. 25, 2000
6023078 Bidirectional silicon carbide power devices having voltage supporting regions therein for providing improved blocking voltage capability Feb. 8, 2000
5998811 Trench emitter controlled thyristor Dec. 7, 1999
5981984 Insulated gate thyristor Nov. 9, 1999
5977570 Semiconductor device and manufacturing method thereof Nov. 2, 1999
5939736 Insulated gate thyristor Aug. 17, 1999
5936267 Insulated gate thyristor Aug. 10, 1999
5925900 Emitter-switched thyristor having a floating ohmic contact Jul. 20, 1999
5923051 Field controlled semiconductor device of SiC and a method for production thereof Jul. 13, 1999
5923055 Controllable semiconductor component Jul. 13, 1999
5914503 Insulated gate thyristor Jun. 22, 1999

1 2 3 4

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