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Class Information
Number: 257/E29.214
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Bipolar device (epo) > Thyristor-type device (e.g., having four-zone regenerative action) (epo) > Gate-turn-off device (epo) > With turn off by field effect (epo) > Produced by insulated gate structure (epo)
Description: This subclass is indented under subclass E29.213. This subclass is substantially the same in scope as ECLA classification H01L29/745B.










Patents under this class:
1 2 3 4 5

Patent Number Title Of Patent Date Issued
8294238 Nonvolatile semiconductor memory device with reduced size of peripheral circuit area Oct. 23, 2012
8093622 Semiconductor device and its driving method Jan. 10, 2012
8049248 Semiconductor device including thyristor and method of manufacturing the same Nov. 1, 2011
7910410 Integrated low leakage Schottky diode Mar. 22, 2011
7745845 Integrated low leakage schottky diode Jun. 29, 2010
7732833 High-voltage semiconductor switching element Jun. 8, 2010
7705368 Insulated gate type thyristor Apr. 27, 2010
7492034 Semiconductor device Feb. 17, 2009
7365372 Semiconductor device and method for manufacturing semiconductor device Apr. 29, 2008
7148522 Thyristor-based SRAM Dec. 12, 2006
6965131 Thyristor switch with turn-off current shunt, and operating method Nov. 15, 2005
6933541 Emitter turn-off thyristors (ETO) Aug. 23, 2005
6911680 Self-aligned thin capacitively-coupled thyristor structure Jun. 28, 2005
6828202 Semiconductor region self-aligned with ion implant shadowing Dec. 7, 2004
6767770 Method of forming self-aligned thin capacitively-coupled thyristor structure Jul. 27, 2004
6660569 Method for producing a power semiconductor device with a stop zone Dec. 9, 2003
6656774 Method to enhance operating characteristics of FET, IGBT, and MCT structures Dec. 2, 2003
6638826 Power MOS device with buried gate Oct. 28, 2003
6472693 Semiconductor device and method of manufacturing the same Oct. 29, 2002
6445035 Power MOS device with buried gate and groove Sep. 3, 2002
6441408 Power semiconductor component for high reverse voltages Aug. 27, 2002
6426520 Semiconductor device Jul. 30, 2002
6423987 Self-protect thyristor Jul. 23, 2002
6278140 Insulated gate thyristor Aug. 21, 2001
6259134 Trench thyristor with improved breakdown voltage characteristics Jul. 10, 2001
6236069 Insulated-gate thyristor May. 22, 2001
6229196 Semiconductor device and fabrication method thereof May. 8, 2001
6188105 High density MOS-gated power device and process for forming same Feb. 13, 2001
6188267 Normally conducting dual thyristor Feb. 13, 2001
6169299 Semiconductor device Jan. 2, 2001
6137122 Latch-up controllable insulated gate bipolar transistor Oct. 24, 2000
6118141 Emitter-switched thyristor Sep. 12, 2000
6110763 One mask, power semiconductor device fabrication process Aug. 29, 2000
6091087 Insulated gate thyristor Jul. 18, 2000
6054728 Insulated gate thyristor Apr. 25, 2000
5998811 Trench emitter controlled thyristor Dec. 7, 1999
5981984 Insulated gate thyristor Nov. 9, 1999
5977570 Semiconductor device and manufacturing method thereof Nov. 2, 1999
5939736 Insulated gate thyristor Aug. 17, 1999
5936267 Insulated gate thyristor Aug. 10, 1999
5925900 Emitter-switched thyristor having a floating ohmic contact Jul. 20, 1999
5923051 Field controlled semiconductor device of SiC and a method for production thereof Jul. 13, 1999
5914503 Insulated gate thyristor Jun. 22, 1999
5874751 Insulated gate thyristor Feb. 23, 1999
5844258 Emitter switched thyristor Dec. 1, 1998
5844259 Vertical conduction MOS controlled thyristor with increased IGBT area and current limiting Dec. 1, 1998
5838026 Insulated-gate semiconductor device Nov. 17, 1998
5828101 Three-terminal semiconductor device and related semiconductor devices Oct. 27, 1998
5796124 MOS gate controlled thyristor Aug. 18, 1998
5793066 Base resistance controlled thyristor structure with high-density layout for increased current capacity Aug. 11, 1998

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