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Class Information
Number: 257/E29.213
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Bipolar device (epo) > Thyristor-type device (e.g., having four-zone regenerative action) (epo) > Gate-turn-off device (epo) > With turn off by field effect (epo)
Description: This subclass is indented under subclass E29.212. This subclass is substantially the same in scope as ECLA classification H01L29/745.










Sub-classes under this class:

Class Number Class Name Patents
257/E29.214 Produced by insulated gate structure (epo) 211


Patents under this class:

Patent Number Title Of Patent Date Issued
8093622 Semiconductor device and its driving method Jan. 10, 2012
7816706 Power semiconductor device Oct. 19, 2010
7365372 Semiconductor device and method for manufacturing semiconductor device Apr. 29, 2008
7285804 Thyristor-based SRAM Oct. 23, 2007
7170106 Power semiconductor device Jan. 30, 2007
6995464 Pressure-contact type semiconductor device Feb. 7, 2006
6423986 Field-controlled high-power semiconductor devices Jul. 23, 2002
6107649 Field-controlled high-power semiconductor devices Aug. 22, 2000
5856683 MOS-controlled thyristor using a source cathode elecrode as the gate electrode of a MOSFET element Jan. 5, 1999
5616938 MOS-controlled power semiconductor component for high voltages Apr. 1, 1997
5606183 Double-gated turn-off thyristor Feb. 25, 1997
5387805 Field controlled thyristor Feb. 7, 1995
4977438 Turn-off semiconductor component and use thereof Dec. 11, 1990
4963950 Metal oxide semiconductor gated turn-off thyristor having an interleaved structure Oct. 16, 1990
4821095 Insulated gate semiconductor device with extra short grid and method of fabrication Apr. 11, 1989
4786958 Lateral dual gate thyristor and method of fabricating same Nov. 22, 1988
4636830 Insulated gate-controlled thyristor having shorted anode Jan. 13, 1987
4630092 Insulated gate-controlled thyristor Dec. 16, 1986
4611235 Thyristor with turn-off FET Sep. 9, 1986
4419683 Thyristor having a controllable emitter short circuit Dec. 6, 1983











 
 
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