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Class Information
Number: 257/E29.212
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Bipolar device (epo) > Thyristor-type device (e.g., having four-zone regenerative action) (epo) > Gate-turn-off device (epo)
Description: This subclass is indented under subclass E29.211. This subclass is substantially the same in scope as ECLA classification H01L29/744.










Sub-classes under this class:

Class Number Class Name Patents
257/E29.213 With turn off by field effect (epo) 20


Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
8669639 Semiconductor element, manufacturing method thereof and operating method thereof Mar. 11, 2014
8552435 Electronic device structure including a buffer layer on a base layer Oct. 8, 2013
8354690 Solid-state pinch off thyristor circuits Jan. 15, 2013
7943956 Semiconductor device comprising a housing containing a triggering unit May. 17, 2011
7696530 Dual-gate sensor Apr. 13, 2010
7544970 Semiconductor device and method of producing the same, and power conversion apparatus incorporating this semiconductor device Jun. 9, 2009
7462888 Semiconductor device and method of producing the same, and power conversion apparatus incorporating this semiconductor device Dec. 9, 2008
7462886 Semiconductor device and method of producing the same, and power conversion apparatus incorporating this semiconductor device Dec. 9, 2008
7365372 Semiconductor device and method for manufacturing semiconductor device Apr. 29, 2008
7307289 Pressed-contact type semiconductor device Dec. 11, 2007
7170106 Power semiconductor device Jan. 30, 2007
6933541 Emitter turn-off thyristors (ETO) Aug. 23, 2005
6900477 Processing technique to improve the turn-off gain of a silicon carbide gate turn-off thyristor and an article of manufacture May. 31, 2005
6870199 Semiconductor device having an electrode overlaps a short carrier lifetime region Mar. 22, 2005
6849874 Minimizing degradation of SiC bipolar semiconductor devices Feb. 1, 2005
6734462 Silicon carbide power devices having increased voltage blocking capabilities May. 11, 2004
6710639 Emitter turn-off thyristors and their drive circuits Mar. 23, 2004
6703642 Silicon carbide (SiC) gate turn-off (GTO) thyristor structure for higher turn-off gain and larger voltage blocking when in the off-state Mar. 9, 2004
6525374 Semiconductor component with a high breakdown voltage Feb. 25, 2003
6521919 Semiconductor device of reduced thermal resistance and increased operating area Feb. 18, 2003
6501099 Modified-anode gate turn-off thyristor Dec. 31, 2002
6472692 Semiconductor device Oct. 29, 2002
6472686 Silicon carbide (SIC) gate turn-off (GTO) thyristor apparatus and method for high power control Oct. 29, 2002
6465863 Power diode structure Oct. 15, 2002
6445013 Gate commutated turn-off semiconductor device Sep. 3, 2002
6441407 Gate controlled thyristor driven with low-inductance Aug. 27, 2002
6303961 Complementary semiconductor devices Oct. 16, 2001
6229196 Semiconductor device and fabrication method thereof May. 8, 2001
6107651 Gate turn-off thyristor with stop layer Aug. 22, 2000
6020603 Semiconductor device with a beveled and chamfered outer peripheral portion Feb. 1, 2000
5962877 Inverter apparatus having improved switching element Oct. 5, 1999
5956577 Method of manufacturing serrated gate-type or joined structure Sep. 21, 1999
5950075 Semiconductor device having recessed gate regions and method of manufacturing the same Sep. 7, 1999
5877518 Semiconductor device and inverter apparatus using the semiconductor device Mar. 2, 1999
5869358 Method for the production of a gate turn-off thyristor having an anode-side stop layer and a transparent anode emitter Feb. 9, 1999
5841155 Semiconductor device containing two joined substrates Nov. 24, 1998
5831293 Semiconductor thyristor switching device and power converter using same Nov. 3, 1998
5831289 Silicon carbide gate turn-off thyristor arrangement Nov. 3, 1998
5739555 Amplifying-gate thyristor with an increased hold current Apr. 14, 1998
5731605 Turn-off power semiconductor component with a particular ballast resistor structure Mar. 24, 1998
5710445 Gate turn-off thyristor for high blocking voltage and small component thickness Jan. 20, 1998
5610415 Turn-off semiconductor component having amphoteric properties Mar. 11, 1997
5587594 Semiconductor component having gate-turn-off thyristor and reduced thermal impairment Dec. 24, 1996
5574297 Gate turnoff thyristor with reduced gate trigger current Nov. 12, 1996
5554863 Gate turn-off thyristor Sep. 10, 1996
5491351 Gate turn-off thyristor Feb. 13, 1996
5459338 Gate turn-off thyristor and power convertor using the same Oct. 17, 1995
5387806 GTO-thyristor Feb. 7, 1995
5345096 Turn-off high-power semiconductor component with low inductive housing Sep. 6, 1994
5324967 Turn off type semiconductor device, method of producing the same and the power conversion apparatus employing the same Jun. 28, 1994

1 2 3 4










 
 
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