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Class Information
Number: 257/E29.212
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Bipolar device (epo) > Thyristor-type device (e.g., having four-zone regenerative action) (epo) > Gate-turn-off device (epo)
Description: This subclass is indented under subclass E29.211. This subclass is substantially the same in scope as ECLA classification H01L29/744.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7365372 |
Semiconductor device and method for manufacturing semiconductor device |
Apr. 29, 2008 |
| 7307289 |
Pressed-contact type semiconductor device |
Dec. 11, 2007 |
| 7170106 |
Power semiconductor device |
Jan. 30, 2007 |
| 6933541 |
Emitter turn-off thyristors (ETO) |
Aug. 23, 2005 |
| 6900477 |
Processing technique to improve the turn-off gain of a silicon carbide gate turn-off thyristor and an article of manufacture |
May. 31, 2005 |
| 6870199 |
Semiconductor device having an electrode overlaps a short carrier lifetime region |
Mar. 22, 2005 |
| 6849874 |
Minimizing degradation of SiC bipolar semiconductor devices |
Feb. 1, 2005 |
| 6734462 |
Silicon carbide power devices having increased voltage blocking capabilities |
May. 11, 2004 |
| 6710639 |
Emitter turn-off thyristors and their drive circuits |
Mar. 23, 2004 |
| 6703642 |
Silicon carbide (SiC) gate turn-off (GTO) thyristor structure for higher turn-off gain and larger voltage blocking when in the off-state |
Mar. 9, 2004 |
| 6525374 |
Semiconductor component with a high breakdown voltage |
Feb. 25, 2003 |
| 6521919 |
Semiconductor device of reduced thermal resistance and increased operating area |
Feb. 18, 2003 |
| 6501099 |
Modified-anode gate turn-off thyristor |
Dec. 31, 2002 |
| 6472692 |
Semiconductor device |
Oct. 29, 2002 |
| 6472686 |
Silicon carbide (SIC) gate turn-off (GTO) thyristor apparatus and method for high power control |
Oct. 29, 2002 |
| 6465863 |
Power diode structure |
Oct. 15, 2002 |
| 6445013 |
Gate commutated turn-off semiconductor device |
Sep. 3, 2002 |
| 6441407 |
Gate controlled thyristor driven with low-inductance |
Aug. 27, 2002 |
| 6303961 |
Complementary semiconductor devices |
Oct. 16, 2001 |
| 6229196 |
Semiconductor device and fabrication method thereof |
May. 8, 2001 |
| 6107651 |
Gate turn-off thyristor with stop layer |
Aug. 22, 2000 |
| 6020603 |
Semiconductor device with a beveled and chamfered outer peripheral portion |
Feb. 1, 2000 |
| 5962877 |
Inverter apparatus having improved switching element |
Oct. 5, 1999 |
| 5956577 |
Method of manufacturing serrated gate-type or joined structure |
Sep. 21, 1999 |
| 5950075 |
Semiconductor device having recessed gate regions and method of manufacturing the same |
Sep. 7, 1999 |
| 5877518 |
Semiconductor device and inverter apparatus using the semiconductor device |
Mar. 2, 1999 |
| 5869358 |
Method for the production of a gate turn-off thyristor having an anode-side stop layer and a transparent anode emitter |
Feb. 9, 1999 |
| 5841155 |
Semiconductor device containing two joined substrates |
Nov. 24, 1998 |
| 5831293 |
Semiconductor thyristor switching device and power converter using same |
Nov. 3, 1998 |
| 5831289 |
Silicon carbide gate turn-off thyristor arrangement |
Nov. 3, 1998 |
| 5739555 |
Amplifying-gate thyristor with an increased hold current |
Apr. 14, 1998 |
| 5731605 |
Turn-off power semiconductor component with a particular ballast resistor structure |
Mar. 24, 1998 |
| 5710445 |
Gate turn-off thyristor for high blocking voltage and small component thickness |
Jan. 20, 1998 |
| 5610415 |
Turn-off semiconductor component having amphoteric properties |
Mar. 11, 1997 |
| 5587594 |
Semiconductor component having gate-turn-off thyristor and reduced thermal impairment |
Dec. 24, 1996 |
| 5574297 |
Gate turnoff thyristor with reduced gate trigger current |
Nov. 12, 1996 |
| 5554863 |
Gate turn-off thyristor |
Sep. 10, 1996 |
| 5491351 |
Gate turn-off thyristor |
Feb. 13, 1996 |
| 5459338 |
Gate turn-off thyristor and power convertor using the same |
Oct. 17, 1995 |
| 5387806 |
GTO-thyristor |
Feb. 7, 1995 |
| 5345096 |
Turn-off high-power semiconductor component with low inductive housing |
Sep. 6, 1994 |
| 5324967 |
Turn off type semiconductor device, method of producing the same and the power conversion apparatus employing the same |
Jun. 28, 1994 |
| 5223442 |
Method of making a semiconductor device of a high withstand voltage |
Jun. 29, 1993 |
| 5156981 |
Method of making a semiconductor device of a high withstand voltage |
Oct. 20, 1992 |
| 5153695 |
Semiconductor gate-controlled high-power capability bipolar device |
Oct. 6, 1992 |
| 5146305 |
Asymmetric gate turn off thyristor with anode short-circuits and reduced turn on current |
Sep. 8, 1992 |
| 5144401 |
Turn-on/off driving technique for insulated gate thyristor |
Sep. 1, 1992 |
| 5142347 |
Power semiconductor component with emitter shorts |
Aug. 25, 1992 |
| 5132768 |
Semiconductor component with turn-off facility |
Jul. 21, 1992 |
| 5132767 |
Double gate GTO thyristor |
Jul. 21, 1992 |
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