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Class Information
Number: 257/E29.211
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Bipolar device (epo) > Thyristor-type device (e.g., having four-zone regenerative action) (epo)
Description: This subclass is indented under subclass E29.171. This subclass is substantially the same in scope as ECLA classification H01L29/74.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7436003 |
Vertical thyristor for ESD protection and a method of fabricating a vertical thyristor for ESD protection |
Oct. 14, 2008 |
| 7423298 |
Bidirectional photothyristor chip, optical lighting coupler, and solid state relay |
Sep. 9, 2008 |
| 7365372 |
Semiconductor device and method for manufacturing semiconductor device |
Apr. 29, 2008 |
| 7301178 |
Pressed-contact type semiconductor device |
Nov. 27, 2007 |
| 7183591 |
Trench isolation for thyristor-based device |
Feb. 27, 2007 |
| 7145186 |
Memory cell with trenched gated thyristor |
Dec. 5, 2006 |
| 7084438 |
Metal insulator power semiconductor component (MIS) and a method for producing the same |
Aug. 1, 2006 |
| 7053404 |
Active semiconductor component with an optimized surface area |
May. 30, 2006 |
| 7015077 |
Varied trench depth for thyristor isolation |
Mar. 21, 2006 |
| 6979602 |
Method for making a recessed thyristor control port |
Dec. 27, 2005 |
| 6967358 |
Thyristor-type memory device |
Nov. 22, 2005 |
| 6943382 |
Pressed-contact type semiconductor device |
Sep. 13, 2005 |
| 6924177 |
Method for producing a thyristor |
Aug. 2, 2005 |
| 6872602 |
Carrier coupler for thyristor-based semiconductor device |
Mar. 29, 2005 |
| 6870202 |
Surge protection semiconductor device |
Mar. 22, 2005 |
| 6864515 |
Pressure contact type semiconductor device having dummy segment |
Mar. 8, 2005 |
| 6841806 |
Heterojunction thyristor-based amplifier |
Jan. 11, 2005 |
| 6815734 |
Varied trench depth for thyristor isolation |
Nov. 9, 2004 |
| 6803259 |
Silicon controlled rectifier for sige process, manufacturing method thereof and integrated circuit including the same |
Oct. 12, 2004 |
| 6787816 |
Thyristor having one or more doped layers |
Sep. 7, 2004 |
| 6756612 |
Carrier coupler for thyristor-based semiconductor device |
Jun. 29, 2004 |
| 6690038 |
Thyristor-based device over substrate surface |
Feb. 10, 2004 |
| 6690039 |
Thyristor-based device that inhibits undesirable conductive channel formation |
Feb. 10, 2004 |
| 6683330 |
Recessed thyristor control port |
Jan. 27, 2004 |
| 6583452 |
Thyristor-based device having extended capacitive coupling |
Jun. 24, 2003 |
| 6509585 |
Electrostatic discharge protective device incorporating silicon controlled rectifier devices |
Jan. 21, 2003 |
| 6507050 |
Thyristors having a novel arrangement of concentric perimeter zones |
Jan. 14, 2003 |
| 6448589 |
Single side contacts for a semiconductor device |
Sep. 10, 2002 |
| 6423985 |
SCR compact structure |
Jul. 23, 2002 |
| 6410965 |
Annular SCR device |
Jun. 25, 2002 |
| 6246079 |
SCR circuit with a high trigger current |
Jun. 12, 2001 |
| 6239463 |
Low resistance power MOSFET or other device containing silicon-germanium layer |
May. 29, 2001 |
| 6163040 |
Thyristor manufacturing method and thyristor |
Dec. 19, 2000 |
| 6144045 |
High power devices based on gallium nitride and aluminum gallium nitride semiconductor heterostructures |
Nov. 7, 2000 |
| 6020603 |
Semiconductor device with a beveled and chamfered outer peripheral portion |
Feb. 1, 2000 |
| 5986290 |
Silicon controlled rectifier with reduced substrate current |
Nov. 16, 1999 |
| 5981982 |
Dual gated power electronic switching devices |
Nov. 9, 1999 |
| 5970324 |
Methods of making dual gated power electronic switching devices |
Oct. 19, 1999 |
| 5883403 |
Power semiconductor device |
Mar. 16, 1999 |
| 5852381 |
Turbine engine ignition exciter circuit including low voltage lockout control |
Dec. 22, 1998 |
| 5710442 |
Semiconductor device and method of manufacturing same |
Jan. 20, 1998 |
| 5656966 |
Turbine engine ignition exciter circuit including low voltage lockout control |
Aug. 12, 1997 |
| 5640024 |
Compression-type power semiconductor device |
Jun. 17, 1997 |
| 5600156 |
Diamond semiconductor device with P-I-N type multilayer structure |
Feb. 4, 1997 |
| 5592118 |
Ignition exciter circuit with thyristors having high di/dt and high voltage blockage |
Jan. 7, 1997 |
| 5554879 |
High voltage component having a low stray current |
Sep. 10, 1996 |
| 5550392 |
Semiconductor switching devices |
Aug. 27, 1996 |
| 5539217 |
Silicon carbide thyristor |
Jul. 23, 1996 |
| 5506153 |
Method for manufacture of a controllable power semiconductor element with buffer zone |
Apr. 9, 1996 |
| 5466951 |
Controllable power semiconductor element with buffer zone and method for the manufacture thereof |
Nov. 14, 1995 |
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