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Class Information
Number: 257/E29.201
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Bipolar device (epo) > Transistor-type device (i.e., able to continuously respond to applied control signal) > Controlled by field effect (e.g., bipolar static induction transistor (bsit)) (epo) > Insulated gate bipolar mode transistor (e.g., igbt; igt; comfet) (epo) > Transistor with vertical current flow (epo) > With nonplanar surface (e.g., with nonplanar gate or with trench or recess or pillar in surface of emitter, base, or collector region for improving current density or short-circuiting emitter and base regions) (epo) > And gate structure lying on slanted or vertical surface or formed in groove (e.g., trench gate igbt) (epo)
Description: This subclass is indented under subclass E29.2. This subclass is substantially the same in scope as ECLA classification H01L29/739C2B2.

Patents under this class:
1 2 3 4 5 6 7 8 9

Patent Number Title Of Patent Date Issued
8710510 High power insulated gate bipolar transistors Apr. 29, 2014
8710542 Semiconductor device Apr. 29, 2014
8704302 Power semiconductor devices and methods Apr. 22, 2014
8680609 Depletion mode semiconductor device with trench gate and manufacturing method thereof Mar. 25, 2014
8680610 Trench MOSFET having floating dummy cells for avalanche improvement Mar. 25, 2014
8653606 Semiconductor device and power conversion device using same Feb. 18, 2014
8643090 Semiconductor devices and methods for manufacturing a semiconductor device Feb. 4, 2014
8643102 Control device of semiconductor device Feb. 4, 2014
8643103 Semiconductor device including gate contact region and protruding gate electrode Feb. 4, 2014
8633529 Vertical transistors Jan. 21, 2014
8633510 IE-type trench gate IGBT Jan. 21, 2014
8618600 Integrated circuit including a buried wiring line Dec. 31, 2013
8618601 Shielded gate trench MOSFET with increased source-metal contact Dec. 31, 2013
8618604 Semiconductor device and method of manufacturing the same Dec. 31, 2013
8610205 Inter-poly dielectric in a shielded gate MOSFET device Dec. 17, 2013
8610235 Trench MOSFET with integrated Schottky barrier diode Dec. 17, 2013
8587047 Capacitor formation for a pumping circuit Nov. 19, 2013
8580667 Self aligned trench MOSFET with integrated diode Nov. 12, 2013
8541837 Semiconductor field effect power switching device Sep. 24, 2013
8541836 Recessed access device for a memory Sep. 24, 2013
8541834 Semiconductor device and method for manufacturing same Sep. 24, 2013
8530966 Semiconductor device Sep. 10, 2013
8524558 Split gate with different gate materials and work functions to reduce gate resistance of ultra high density MOSFET Sep. 3, 2013
8492816 Deep trench decoupling capacitor Jul. 23, 2013
8476125 Fabrication technique for high frequency, high power group III nitride electronic devices Jul. 2, 2013
8476133 Method of manufacture and structure for a trench transistor having a heavy body region Jul. 2, 2013
8461004 Configuration of high-voltage semiconductor power device to achieve three dimensional charge coupling Jun. 11, 2013
8455944 Semiconductor device having a trench-gate transistor Jun. 4, 2013
8455951 Semiconductor device Jun. 4, 2013
8450802 LDMOS having a field plate May. 28, 2013
8441069 Structure and method for forming trench-gate field effect transistor with source plug May. 14, 2013
8431989 Shielded gate trench (SGT) MOSFET devices and manufacturing processes Apr. 30, 2013
8426910 Semiconductor device for use in a power supply circuit and having a power MOSFET and Schottky barrier diode Apr. 23, 2013
8409955 Method of forming a semiconductor device Apr. 2, 2013
8384194 Power semiconductor device comprising a plurality of trench IGBTs Feb. 26, 2013
8372698 Semiconductor device having a modified recess channel gate and a method for fabricating the same Feb. 12, 2013
8373226 Semiconductor device including a Trench-Gate Fin-FET Feb. 12, 2013
8368126 Trench metal oxide semiconductor with recessed trench material and remote contacts Feb. 5, 2013
8357971 Trench gate MOSFET and method of manufacturing the same Jan. 22, 2013
8354713 Method of fabricating semiconductor device Jan. 15, 2013
8350366 Power semiconductor element with two-stage impurity concentration profile Jan. 8, 2013
8344415 Semiconductor component Jan. 1, 2013
8330213 Power semiconductor devices, methods, and structures with embedded dielectric layers containing permanent charges Dec. 11, 2012
8330214 Power semiconductor device Dec. 11, 2012
8319280 Recessed access device for a memory Nov. 27, 2012
8319314 Semiconductor device Nov. 27, 2012
8288819 Semiconductor device with bulb-type recessed channel and method for fabricating the same Oct. 16, 2012
8242557 Trench gate type transistor Aug. 14, 2012
8217420 Power semiconductor device Jul. 10, 2012
8207596 Self-alignment insulation structure Jun. 26, 2012

1 2 3 4 5 6 7 8 9

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