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Class Information
Number: 257/E29.2
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Bipolar device (epo) > Transistor-type device (i.e., able to continuously respond to applied control signal) > Controlled by field effect (e.g., bipolar static induction transistor (bsit)) (epo) > Insulated gate bipolar mode transistor (e.g., igbt; igt; comfet) (epo) > Transistor with vertical current flow (epo) > With nonplanar surface (e.g., with nonplanar gate or with trench or recess or pillar in surface of emitter, base, or collector region for improving current density or short-circuiting emitter and base regions) (epo)
Description: This subclass is indented under subclass E29.198. This subclass is substantially the same in scope as ECLA classification H01L29/739C2B.

Sub-classes under this class:

Class Number Class Name Patents
257/E29.201 And gate structure lying on slanted or vertical surface or formed in groove (e.g., trench gate igbt) (epo) 439

Patents under this class:
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Patent Number Title Of Patent Date Issued
8680610 Trench MOSFET having floating dummy cells for avalanche improvement Mar. 25, 2014
8643090 Semiconductor devices and methods for manufacturing a semiconductor device Feb. 4, 2014
8610210 Power semiconductor device and method for manufacturing same Dec. 17, 2013
8525187 Insulated gate bipolar transistor Sep. 3, 2013
8502236 Insulated gate field effect transistor Aug. 6, 2013
8384194 Power semiconductor device comprising a plurality of trench IGBTs Feb. 26, 2013
8134197 Nanowire transistor with surrounding gate Mar. 13, 2012
8097917 Silicon carbide semiconductor device Jan. 17, 2012
8072022 Apparatus and methods for improved flash cell characteristics Dec. 6, 2011
7986003 Semiconductor device and manufacturing method thereof Jul. 26, 2011
7982247 Transistor with gain variation compensation Jul. 19, 2011
7936009 Shielded gate trench FET with an inter-electrode dielectric having a low-k dielectric therein May. 3, 2011
7898025 Semiconductor device having recess gate Mar. 1, 2011
7880227 Trench semiconductor device of improved voltage strength Feb. 1, 2011
7872297 Flash memory device and fabricating method thereof comprising a body recess region Jan. 18, 2011
7855415 Power semiconductor devices having termination structures and methods of manufacture Dec. 21, 2010
7816720 Trench MOSFET structure having improved avalanche capability using three masks process Oct. 19, 2010
7808029 Mask structure for manufacture of trench type semiconductor device Oct. 5, 2010
7800183 Semiconductor device Sep. 21, 2010
7800187 Trech-type vertical semiconductor device having gate electrode buried in rounded hump opening Sep. 21, 2010
7741223 Semiconductor device with bulb type recess gate and method for fabricating the same Jun. 22, 2010
7709931 Trenched semiconductor device May. 4, 2010
7652308 Semiconductor device having gate-all-around structure and method of fabricating the same Jan. 26, 2010
7608878 Semiconductor device manufactured with a double shallow trench isolation process Oct. 27, 2009
7521755 Trench semiconductor device of improved voltage strength, and method of fabrication Apr. 21, 2009
7439579 Power semiconductor with functional element guide structure Oct. 21, 2008
7385248 Shielded gate field effect transistor with improved inter-poly dielectric Jun. 10, 2008
7285455 Method of producing the same Oct. 23, 2007
7183600 Semiconductor device with trench gate type transistor and method of manufacturing the same Feb. 27, 2007
7180159 Bipolar transistor having base over buried insulating and polycrystalline regions Feb. 20, 2007
7118971 Method for fabricating trench power device Oct. 10, 2006
6870201 High voltage resistant edge structure for semiconductor components Mar. 22, 2005
6646304 Universal semiconductor wafer for high-voltage semiconductor components Nov. 11, 2003
6642120 Semiconductor circuit Nov. 4, 2003
6630711 Semiconductor structures with trench contacts Oct. 7, 2003
6541818 Field-effect transistor configuration with a trench-shaped gate electrode and an additional highly doped layer in the body region Apr. 1, 2003
6534830 Low impedance VDMOS semiconductor component Mar. 18, 2003
6437399 Semiconductor structures with trench contacts Aug. 20, 2002
6225649 Insulated-gate bipolar semiconductor device May. 1, 2001
6225643 SOI cell and method for producing it May. 1, 2001
6184555 Field effect-controlled semiconductor component Feb. 6, 2001
6150694 Silicon-on-insulator insulated gate bipolar transistor Nov. 21, 2000
6144065 MOS gated device with self aligned cells Nov. 7, 2000
6110799 Trench contact process Aug. 29, 2000
6091107 Semiconductor devices Jul. 18, 2000
6084284 Integrated circuit including inverted dielectric isolation Jul. 4, 2000
6054748 High voltage semiconductor power device Apr. 25, 2000
6037628 Semiconductor structures with trench contacts Mar. 14, 2000
5981981 Semiconductor device including a bipolar structure Nov. 9, 1999
5910668 Method of making a insulated gate bipolar transistor with high-energy P+ implant and silicon-etch contact Jun. 8, 1999

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