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Class Information
Number: 257/E29.199
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Bipolar device (epo) > Transistor-type device (i.e., able to continuously respond to applied control signal) > Controlled by field effect (e.g., bipolar static induction transistor (bsit)) (epo) > Insulated gate bipolar mode transistor (e.g., igbt; igt; comfet) (epo) > Transistor with vertical current flow (epo) > With both emitter and collector contacts in same substrate side (epo)
Description: This subclass is indented under subclass E29.198. This subclass is substantially the same in scope as ECLA classification H01L29/739C2C.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8569170 Manufacturing method of semiconductor device comprising silicide layer with varied thickness Oct. 29, 2013
8546908 High efficiency amplifier with reduced parasitic capacitance Oct. 1, 2013
8242537 IGBT with fast reverse recovery time rectifier and manufacturing method thereof Aug. 14, 2012
8232623 Semiconductor device Jul. 31, 2012
8212282 Semiconductor device used in step-up DC-DC converter, and step-up DC-DC converter Jul. 3, 2012
8063418 Semiconductor device Nov. 22, 2011
7932538 Insulated gate bipolar transistor and method of fabricating the same Apr. 26, 2011
7842967 Semiconductor device used in step-up DC-DC converter, and step-up DC-DC converter Nov. 30, 2010
7800183 Semiconductor device Sep. 21, 2010
7759696 High-breakdown voltage semiconductor switching device and switched mode power supply apparatus using the same Jul. 20, 2010
7709931 Trenched semiconductor device May. 4, 2010
7566947 Semiconductor device with bipolar transistor and method of fabricating the same Jul. 28, 2009
7560797 Semiconductor device and manufacturing method of the same Jul. 14, 2009
7449410 Methods of forming CoSi.sub.2, methods of forming field effect transistors, and methods of forming conductive contacts Nov. 11, 2008
7233031 Vertical power semiconductor component Jun. 19, 2007
6439514 Semiconductor device with elements surrounded by trenches Aug. 27, 2002
6229196 Semiconductor device and fabrication method thereof May. 8, 2001
6225649 Insulated-gate bipolar semiconductor device May. 1, 2001
6163051 High breakdown voltage semiconductor device Dec. 19, 2000
6107661 Semiconductor device and method of manufacturing same Aug. 22, 2000
6064086 Semiconductor device having lateral IGBT May. 16, 2000
5920087 Lateral IGBT Jul. 6, 1999
5904510 Power transistor device having ultra deep increased concentration region May. 18, 1999
5891776 Methods of forming insulated-gate semiconductor devices using self-aligned trench sidewall diffusion techniques Apr. 6, 1999
5838026 Insulated-gate semiconductor device Nov. 17, 1998
5796126 Hybrid schottky injection field effect transistor Aug. 18, 1998
5796125 High breakdown voltage semiconductor device using trench grooves Aug. 18, 1998
5731603 Lateral IGBT Mar. 24, 1998
5689121 Insulated-gate semiconductor device Nov. 18, 1997
5661314 Power transistor device having ultra deep increased concentration Aug. 26, 1997
5644148 Power transistor device having ultra deep increased concentration region Jul. 1, 1997
5624855 Process of producing insulated-gate bipolar transistor Apr. 29, 1997
5621229 Semiconductor device and control method Apr. 15, 1997
5572055 Insulated-gate bipolar transistor with reduced latch-up Nov. 5, 1996
5559348 Semiconductor device having insulated gate bipolar transistor Sep. 24, 1996
5557125 Dielectrically isolated semiconductor devices having improved characteristics Sep. 17, 1996
5455442 COMFET switch and method Oct. 3, 1995
5448083 Insulated-gate semiconductor device Sep. 5, 1995
5412558 Semiconductor integrated circuit unit May. 2, 1995
5349224 Integrable MOS and IGBT devices having trench gate structure Sep. 20, 1994
5329142 Self turn-off insulated-gate power semiconductor device with injection-enhanced transistor structure Jul. 12, 1994
5276339 Semiconductor with a conductivity modulating-type MISFET Jan. 4, 1994
5253156 Semiconductor integrated circuit unit Oct. 12, 1993
5250449 Vertical type semiconductor device and method for producing the same Oct. 5, 1993
5227653 Lateral trench-gate bipolar transistors Jul. 13, 1993
5198688 Semiconductor device provided with a conductivity modulation MISFET Mar. 30, 1993
5155562 Semiconductor device equipped with a conductivity modulation MISFET Oct. 13, 1992
5155574 Semiconductor device Oct. 13, 1992
5126806 Lateral insulated gate bipolar transistor Jun. 30, 1992
5060032 Insulated gate transistor operable at a low-drain-source voltage Oct. 22, 1991

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