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Class Information
Number: 257/E29.198
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Bipolar device (epo) > Transistor-type device (i.e., able to continuously respond to applied control signal) > Controlled by field effect (e.g., bipolar static induction transistor (bsit)) (epo) > Insulated gate bipolar mode transistor (e.g., igbt; igt; comfet) (epo) > Transistor with vertical current flow (epo)
Description: This subclass is indented under subclass E29.197. This subclass is substantially the same in scope as ECLA classification H01L29/739C2.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7375410 |
Ultra-thin SOI vertical bipolar transistors with an inversion collector on thin-buried oxide (BOX) for low substrate-bias operation and methods thereof |
May. 20, 2008 |
| 7307330 |
Reverse blocking semiconductor device and a method for manufacturing the same |
Dec. 11, 2007 |
| 7279743 |
Closed cell trench metal-oxide-semiconductor field effect transistor |
Oct. 9, 2007 |
| 7233031 |
Vertical power semiconductor component |
Jun. 19, 2007 |
| 7227240 |
Semiconductor device with wire bond inductor and method |
Jun. 5, 2007 |
| 7199404 |
Semiconductor substrate and semiconductor device using the same |
Apr. 3, 2007 |
| 7095079 |
Injection enhanced gate transistor including second emitter in dummy region to prevent waveform vibration associated with negative gate capacitance |
Aug. 22, 2006 |
| 7071516 |
Semiconductor device and driving circuit for semiconductor device |
Jul. 4, 2006 |
| 7067900 |
Insulated gate bipolar transistor having a reduced tail current and method of fabricating the same |
Jun. 27, 2006 |
| 7057240 |
Semiconductor circuit, especially for ignition purposes, and the use of the same |
Jun. 6, 2006 |
| 7049674 |
Reverse blocking semiconductor device and a method for manufacturing the same |
May. 23, 2006 |
| 7042046 |
Super-junction semiconductor device and method of manufacturing the same |
May. 9, 2006 |
| 7038272 |
Method for forming a channel zone of a transistor and NMOS transistor |
May. 2, 2006 |
| 7026668 |
High-breakdown-voltage semiconductor device |
Apr. 11, 2006 |
| 7009239 |
Vertical semiconductor device and manufacturing method thereof |
Mar. 7, 2006 |
| 7009269 |
Semiconductor device |
Mar. 7, 2006 |
| 7002205 |
Super-junction semiconductor device and method of manufacturing the same |
Feb. 21, 2006 |
| 6987320 |
Pressure-welded semiconductor device |
Jan. 17, 2006 |
| 6949439 |
Semiconductor power component and a method of producing same |
Sep. 27, 2005 |
| 6940144 |
Semiconductor equipment |
Sep. 6, 2005 |
| 6936908 |
Forward and reverse blocking devices |
Aug. 30, 2005 |
| 6936892 |
Semiconductor device with alternating conductivity type layer and method of manufacturing the same |
Aug. 30, 2005 |
| 6930356 |
Power semiconductor device having high breakdown voltage, low on-resistance, and small switching loss and method of forming the same |
Aug. 16, 2005 |
| 6927102 |
Semiconductor device and method of forming a semiconductor device |
Aug. 9, 2005 |
| 6921687 |
Power semiconductor element capable of improving short circuit withstand capability while maintaining low on-voltage and method of fabricating the same |
Jul. 26, 2005 |
| 6911692 |
Semiconductor device |
Jun. 28, 2005 |
| 6906399 |
Integrated circuit including semiconductor power device and electrically isolated thermal sensor |
Jun. 14, 2005 |
| 6906362 |
Method of isolating the current sense on power devices while maintaining a continuous stripe cell |
Jun. 14, 2005 |
| 6900518 |
Semiconductor device |
May. 31, 2005 |
| 6894319 |
Semiconductor device |
May. 17, 2005 |
| 6894347 |
Power semiconductor element capable of improving short circuit withstand capability while maintaining low on-voltage and method of fabricating the same |
May. 17, 2005 |
| 6888206 |
Power semiconductor device and method of manufacturing the same |
May. 3, 2005 |
| 6870201 |
High voltage resistant edge structure for semiconductor components |
Mar. 22, 2005 |
| 6870221 |
Power switching transistor with low drain to gate capacitance |
Mar. 22, 2005 |
| 6867454 |
Power semiconductor device and manufacturing method thereof |
Mar. 15, 2005 |
| 6864535 |
Controllable semiconductor switching element that blocks in both directions |
Mar. 8, 2005 |
| 6856520 |
Double sided IGBT phase leg architecture and clocking method for reduced turn on loss |
Feb. 15, 2005 |
| 6855970 |
High-breakdown-voltage semiconductor device |
Feb. 15, 2005 |
| 6838321 |
SEMICONDUCTOR SUBSTRATE WITH DEFECTS REDUCED OR REMOVED AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE CAPABLE OF BIDIRECTIONALLY RETAINING BREAKDOWN VOLTAGE AND METHOD OF MANU |
Jan. 4, 2005 |
| 6833562 |
Silicon carbide semiconductor device and its manufacturing method |
Dec. 21, 2004 |
| 6831329 |
Quick punch through IGBT having gate-controllable DI/DT and reduced EMI during inductive turn off |
Dec. 14, 2004 |
| 6831331 |
Power MOS transistor for absorbing surge current |
Dec. 14, 2004 |
| 6831327 |
Vertically structured power semiconductor component |
Dec. 14, 2004 |
| 6825565 |
Semiconductor device |
Nov. 30, 2004 |
| 6825110 |
Method for fabricating semiconductor component with an optimized thickness |
Nov. 30, 2004 |
| 6815767 |
Insulated gate transistor |
Nov. 9, 2004 |
| 6803627 |
Reverse-blocking power semiconductor component having a region short-circuited to a drain-side part of a body zone |
Oct. 12, 2004 |
| 6803609 |
Bipolar high-voltage power component |
Oct. 12, 2004 |
| 6803294 |
Semiconductor wafer and manufacturing method of semiconductor device |
Oct. 12, 2004 |
| 6798019 |
IGBT with channel resistors |
Sep. 28, 2004 |
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