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Class Information
Number: 257/E29.198
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Bipolar device (epo) > Transistor-type device (i.e., able to continuously respond to applied control signal) > Controlled by field effect (e.g., bipolar static induction transistor (bsit)) (epo) > Insulated gate bipolar mode transistor (e.g., igbt; igt; comfet) (epo) > Transistor with vertical current flow (epo)
Description: This subclass is indented under subclass E29.197. This subclass is substantially the same in scope as ECLA classification H01L29/739C2.

Sub-classes under this class:

Class Number Class Name Patents
257/E29.199 With both emitter and collector contacts in same substrate side (epo) 53
257/E29.2 With nonplanar surface (e.g., with nonplanar gate or with trench or recess or pillar in surface of emitter, base, or collector region for improving current density or short-circuiting emitter and base regions) (epo) 94

Patents under this class:
1 2 3 4 5 6 7 8 9 10

Patent Number Title Of Patent Date Issued
8680610 Trench MOSFET having floating dummy cells for avalanche improvement Mar. 25, 2014
8643146 Semiconductor device Feb. 4, 2014
8598623 Nanotube semiconductor devices and nanotube termination structures Dec. 3, 2013
8541834 Semiconductor device and method for manufacturing same Sep. 24, 2013
8426944 Insulated gate bipolar transistor Apr. 23, 2013
8421184 Semiconductor device Apr. 16, 2013
8399907 VTS insulated gate bipolar transistor Mar. 19, 2013
8384194 Power semiconductor device comprising a plurality of trench IGBTs Feb. 26, 2013
8334565 Trench type insulated gate MOS semiconductor device Dec. 18, 2012
8299494 Nanotube semiconductor devices Oct. 30, 2012
8264035 Avalanche capability improvement in power semiconductor devices Sep. 11, 2012
8242537 IGBT with fast reverse recovery time rectifier and manufacturing method thereof Aug. 14, 2012
8242536 Semiconductor device Aug. 14, 2012
8232623 Semiconductor device Jul. 31, 2012
8222694 True CSP power MOSFET based on bottom-source LDMOS Jul. 17, 2012
8178947 Semiconductor device May. 15, 2012
8106454 Power semiconductor device and method for manufacturing same Jan. 31, 2012
8097917 Silicon carbide semiconductor device Jan. 17, 2012
8089094 Semiconductor device Jan. 3, 2012
8084814 Semiconductor device and method of producing the same Dec. 27, 2011
8067797 Variable threshold trench IGBT with offset emitter contacts Nov. 29, 2011
8058685 Trench MOSFET structures using three masks process Nov. 15, 2011
8039879 Semiconductor device having a control circuit and method of its manufacture Oct. 18, 2011
8030153 High voltage TMOS semiconductor device with low gate charge structure and method of making Oct. 4, 2011
8008712 Metallization and its use in, in particular, an IGBT or a diode Aug. 30, 2011
7986003 Semiconductor device and manufacturing method thereof Jul. 26, 2011
7968940 Insulated gate bipolar transistor device comprising a depletion-mode MOSFET Jun. 28, 2011
7911024 Ultra-thin SOI vertical bipolar transistors with an inversion collector on thin-buried oxide (BOX) for low substrate-bias operation and methods thereof Mar. 22, 2011
7851856 True CSP power MOSFET based on bottom-source LDMOS Dec. 14, 2010
7843003 Insulated gate semiconductor device Nov. 30, 2010
7816720 Trench MOSFET structure having improved avalanche capability using three masks process Oct. 19, 2010
7800183 Semiconductor device Sep. 21, 2010
7772613 Semiconductor device with large blocking voltage and method of manufacturing the same Aug. 10, 2010
7709889 Semiconductor device with improved breakdown properties and manufacturing method thereof May. 4, 2010
7705396 Trench type MOSFET and method of fabricating the same Apr. 27, 2010
7687825 Insulated gate bipolar conduction transistors (IBCTS) and related methods of fabrication Mar. 30, 2010
7638368 Reverse blocking semiconductor device and a method for manufacturing the same Dec. 29, 2009
7638839 Power semiconductor device and power conversion device using the same Dec. 29, 2009
7632718 Semiconductor power component with a vertical current path through a semiconductor power chip Dec. 15, 2009
7626232 Voltage-controlled semiconductor device Dec. 1, 2009
7586130 Vertical field effect transistor using linear structure as a channel region and method for fabricating the same Sep. 8, 2009
7560771 Insulated gate transistor Jul. 14, 2009
RE40712 High-breakdown-voltage semiconductor apparatus May. 19, 2009
RE40705 High-breakdown-voltage semiconductor apparatus May. 5, 2009
7375410 Ultra-thin SOI vertical bipolar transistors with an inversion collector on thin-buried oxide (BOX) for low substrate-bias operation and methods thereof May. 20, 2008
7307330 Reverse blocking semiconductor device and a method for manufacturing the same Dec. 11, 2007
7279743 Closed cell trench metal-oxide-semiconductor field effect transistor Oct. 9, 2007
7233031 Vertical power semiconductor component Jun. 19, 2007
7227240 Semiconductor device with wire bond inductor and method Jun. 5, 2007
7199404 Semiconductor substrate and semiconductor device using the same Apr. 3, 2007

1 2 3 4 5 6 7 8 9 10

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