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Class Information
Number: 257/E29.197
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Bipolar device (epo) > Transistor-type device (i.e., able to continuously respond to applied control signal) > Controlled by field effect (e.g., bipolar static induction transistor (bsit)) (epo) > Insulated gate bipolar mode transistor (e.g., igbt; igt; comfet) (epo)
Description: This subclass is indented under subclass E29.194. This subclass is substantially the same in scope as ECLA classification H01L29/739C.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 6037634 |
Semiconductor device with first and second elements formed on first and second portions |
Mar. 14, 2000 |
| 6025622 |
Conductivity modulated MOSFET |
Feb. 15, 2000 |
| 6020222 |
Silicon oxide insulator (SOI) semiconductor having selectively linked body |
Feb. 1, 2000 |
| 5998227 |
IGBT and free-wheeling diode combination |
Dec. 7, 1999 |
| 5994738 |
Silicon oxide insulator (SOI) semiconductor having selectively linked body |
Nov. 30, 1999 |
| 5977569 |
Bidirectional lateral insulated gate bipolar transistor having increased voltage blocking capability |
Nov. 2, 1999 |
| 5976926 |
Static memory cell and method of manufacturing a static memory cell |
Nov. 2, 1999 |
| 5959345 |
Edge termination for zener-clamped power device |
Sep. 28, 1999 |
| 5945723 |
Composite controlled semiconductor device |
Aug. 31, 1999 |
| 5929485 |
High voltage insulated gate type bipolar transistor for self-isolated smart power IC |
Jul. 27, 1999 |
| 5904510 |
Power transistor device having ultra deep increased concentration region |
May. 18, 1999 |
| 5874767 |
Semiconductor device including a lateral power device |
Feb. 23, 1999 |
| 5869850 |
Lateral insulated gate bipolar transistor |
Feb. 9, 1999 |
| 5828112 |
Semiconductor device incorporating an output element having a current-detecting section |
Oct. 27, 1998 |
| 5808345 |
High speed IGBT |
Sep. 15, 1998 |
| 5808344 |
Single-transistor logic and CMOS inverters |
Sep. 15, 1998 |
| 5801420 |
Lateral semiconductor arrangement for power ICS |
Sep. 1, 1998 |
| 5796146 |
Semiconductor device having a lateral insulated gate biopolar transistor |
Aug. 18, 1998 |
| 5793064 |
Bidirectional lateral insulated gate bipolar transistor |
Aug. 11, 1998 |
| 5793083 |
Method for designing shallow junction, salicided NMOS transistors with decreased electrostatic discharge sensitivity |
Aug. 11, 1998 |
| 5780917 |
Composite controlled semiconductor device and power conversion device using the same |
Jul. 14, 1998 |
| 5780887 |
Conductivity modulated MOSFET |
Jul. 14, 1998 |
| 5766966 |
Power transistor device having ultra deep increased concentration region |
Jun. 16, 1998 |
| 5757051 |
Static memory cell and method of manufacturing a static memory cell |
May. 26, 1998 |
| 5744830 |
Semiconductor device |
Apr. 28, 1998 |
| 5726469 |
Surface voltage sustaining structure for semiconductor devices |
Mar. 10, 1998 |
| 5665988 |
Conductivity-modulation semiconductor |
Sep. 9, 1997 |
| 5663079 |
Method of making increased density MOS-gated semiconductor devices |
Sep. 2, 1997 |
| 5654561 |
Insulated gate bipolar transistor with multiple buffer layers |
Aug. 5, 1997 |
| 5624855 |
Process of producing insulated-gate bipolar transistor |
Apr. 29, 1997 |
| 5608236 |
Semiconductor device |
Mar. 4, 1997 |
| 5596216 |
Semiconductor device with diode and capable of device protection |
Jan. 21, 1997 |
| 5572048 |
Voltage-driven type semiconductor device |
Nov. 5, 1996 |
| 5572055 |
Insulated-gate bipolar transistor with reduced latch-up |
Nov. 5, 1996 |
| 5559346 |
Field-effect semiconductor device with increased breakdown voltage |
Sep. 24, 1996 |
| 5548150 |
Field effect transistor |
Aug. 20, 1996 |
| 5543650 |
Electrostatic discharge protection circuit employing a mosfet device |
Aug. 6, 1996 |
| 5528063 |
Conductive-overlaid self-aligned MOS-gated semiconductor devices |
Jun. 18, 1996 |
| 5498885 |
Modulation circuit |
Mar. 12, 1996 |
| 5485023 |
Insulated gate bipolar transistor |
Jan. 16, 1996 |
| 5451799 |
MOS transistor for protection against electrostatic discharge |
Sep. 19, 1995 |
| 5449938 |
MOS-controlled power semiconductor component |
Sep. 12, 1995 |
| 5436486 |
High voltage MIS transistor and semiconductor device |
Jul. 25, 1995 |
| 5428241 |
High breakdown voltage type semiconductor device |
Jun. 27, 1995 |
| 5349212 |
Semiconductor device having thyristor structure |
Sep. 20, 1994 |
| 5343052 |
Lateral insulated gate bipolar transistor |
Aug. 30, 1994 |
| 5323041 |
High-breakdown-voltage semiconductor element |
Jun. 21, 1994 |
| 5286984 |
Conductivity modulated MOSFET |
Feb. 15, 1994 |
| 5279977 |
Method of manufacturing a semiconductor device for extracting a signal used to monitor potential of a high voltage island |
Jan. 18, 1994 |
| 5258641 |
Semiconductor device for extracting a signal used to monitor potential of a high voltage island at a low voltage island and method of manufacturing the same |
Nov. 2, 1993 |
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