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Class Information
Number: 257/E29.197
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Bipolar device (epo) > Transistor-type device (i.e., able to continuously respond to applied control signal) > Controlled by field effect (e.g., bipolar static induction transistor (bsit)) (epo) > Insulated gate bipolar mode transistor (e.g., igbt; igt; comfet) (epo)
Description: This subclass is indented under subclass E29.194. This subclass is substantially the same in scope as ECLA classification H01L29/739C.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7408234 |
Semiconductor device and method for manufacturing the same |
Aug. 5, 2008 |
| 7339236 |
Semiconductor device, driver circuit and manufacturing method of semiconductor device |
Mar. 4, 2008 |
| 7319257 |
Power semiconductor device |
Jan. 15, 2008 |
| 7233031 |
Vertical power semiconductor component |
Jun. 19, 2007 |
| 7211861 |
Insulated gate semiconductor device |
May. 1, 2007 |
| 7205605 |
Semiconductor component and method of manufacturing |
Apr. 17, 2007 |
| 6998681 |
Lateral low-side and high-side high-voltage devices |
Feb. 14, 2006 |
| 6989568 |
Lateral high-breakdown-voltage transistor having drain contact region |
Jan. 24, 2006 |
| 6927102 |
Semiconductor device and method of forming a semiconductor device |
Aug. 9, 2005 |
| 6914298 |
Double diffusion MOSFET with N+ and P+ type regions at an equal potential |
Jul. 5, 2005 |
| 6914270 |
IGBT with PN insulation and production method |
Jul. 5, 2005 |
| 6900518 |
Semiconductor device |
May. 31, 2005 |
| 6888710 |
Insulated gate bipolar transistor and electrostatic discharge cell protection utilizing insulated gate bipolar transistors |
May. 3, 2005 |
| 6878998 |
Semiconductor device with region that changes depth across the direction of current flow |
Apr. 12, 2005 |
| 6867454 |
Power semiconductor device and manufacturing method thereof |
Mar. 15, 2005 |
| 6864550 |
Semiconductor device |
Mar. 8, 2005 |
| 6864537 |
Thick gate oxide transistor and electrostatic discharge protection utilizing thick gate oxide transistors |
Mar. 8, 2005 |
| 6861711 |
Thick gate oxide transistor and electrostatic discharge protection utilizing thick gate oxide transistors |
Mar. 1, 2005 |
| 6815800 |
Bipolar junction transistor with reduced parasitic bipolar conduction |
Nov. 9, 2004 |
| 6794689 |
High voltage semiconductor component |
Sep. 21, 2004 |
| 6777748 |
Bi-directional semiconductor component |
Aug. 17, 2004 |
| 6707104 |
Lateral high-breakdown-voltage transistor |
Mar. 16, 2004 |
| 6707101 |
Integrated series schottky and FET to allow negative drain voltage |
Mar. 16, 2004 |
| 6703684 |
Semiconductor device and method of forming a semiconductor device |
Mar. 9, 2004 |
| 6696323 |
Method of manufacturing semiconductor device having trench filled up with gate electrode |
Feb. 24, 2004 |
| 6693327 |
Lateral semiconductor component in thin-film SOI technology |
Feb. 17, 2004 |
| 6642599 |
Semiconductor device and method of manufacturing the same |
Nov. 4, 2003 |
| 6627952 |
Silicon oxide insulator (SOI) semiconductor having selectively linked body |
Sep. 30, 2003 |
| 6614077 |
Semiconductor device improved in ESD reliability |
Sep. 2, 2003 |
| 6580108 |
Insulated gate bipolar transistor decreasing the gate resistance |
Jun. 17, 2003 |
| 6529034 |
Integrated series schottky and FET to allow negative drain voltage |
Mar. 4, 2003 |
| 6528849 |
Dual-gate resurf superjunction lateral DMOSFET |
Mar. 4, 2003 |
| 6525375 |
Semiconductor device having trench filled up with gate electrode |
Feb. 25, 2003 |
| 6515302 |
Power devices in wide bandgap semiconductor |
Feb. 4, 2003 |
| 6489653 |
Lateral high-breakdown-voltage transistor |
Dec. 3, 2002 |
| 6458667 |
High power PMOS device |
Oct. 1, 2002 |
| 6423598 |
Semiconductor device, a method of manufacturing the same, and a semiconductor device protective circuit |
Jul. 23, 2002 |
| 6414370 |
Semiconductor circuit preventing electromagnetic noise |
Jul. 2, 2002 |
| 6404045 |
IGBT and free-wheeling diode combination |
Jun. 11, 2002 |
| 6388271 |
Semiconductor component |
May. 14, 2002 |
| 6236068 |
Transistor component |
May. 22, 2001 |
| 6218699 |
Semiconductor component with adjustable current amplification based on a tunnel-current-controlled avalanche breakdown |
Apr. 17, 2001 |
| 6204717 |
Semiconductor circuit and semiconductor device for use in equipment such as a power converting apparatus |
Mar. 20, 2001 |
| 6184539 |
Static memory cell and method of forming static memory cell |
Feb. 6, 2001 |
| 6177705 |
High power PMOS device |
Jan. 23, 2001 |
| 6144070 |
High breakdown-voltage transistor with electrostatic discharge protection |
Nov. 7, 2000 |
| 6111289 |
Semiconductor device |
Aug. 29, 2000 |
| 6072215 |
Semiconductor device including lateral MOS element |
Jun. 6, 2000 |
| 6066863 |
Lateral semiconductor arrangement for power IGS |
May. 23, 2000 |
| 6049095 |
Semiconductor device |
Apr. 11, 2000 |
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