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Class Information
Number: 257/E29.196
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Bipolar device (epo) > Transistor-type device (i.e., able to continuously respond to applied control signal) > Controlled by field effect (e.g., bipolar static induction transistor (bsit)) (epo) > Gated diode structure (epo) > With pn junction gate (e.g., field-controlled thyristor (fcth), static induction thyristor (sith)) (epo)
Description: This subclass is indented under subclass E29.195. This subclass is substantially the same in scope as ECLA classification H01L29/739B2.










Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8569117 Systems and methods integrating trench-gated thyristor with trench-gated rectifier Oct. 29, 2013
8242537 IGBT with fast reverse recovery time rectifier and manufacturing method thereof Aug. 14, 2012
7902051 Method for fabrication of single crystal diodes for resistive memories Mar. 8, 2011
7595516 Optoelectronic circuit employing a heterojunction thyristor device to convert a digital optical signal to a digital electrical signal Sep. 29, 2009
7547586 Method of making a self aligned ion implanted gate and guard ring structure for use in a sit Jun. 16, 2009
7535039 Vertically integrated dual gate transistor structure and method of making same May. 19, 2009
7504286 Semiconductor memory devices and methods for fabricating the same Mar. 17, 2009
7405435 Semiconductor device having electrostatic destruction protection circuit using thyristor as protection element Jul. 29, 2008
7030698 High-frequency power amplifier Apr. 18, 2006
7026668 High-breakdown-voltage semiconductor device Apr. 11, 2006
6855970 High-breakdown-voltage semiconductor device Feb. 15, 2005
6831328 Anode voltage sensor of a vertical power component and use for protecting against short circuits Dec. 14, 2004
6558996 Edge structure for relaxing electric field of semiconductor device having an embedded type diffusion structure May. 6, 2003
6465871 Semiconductor switching device and method of controlling a carrier lifetime in a semiconductor switching device Oct. 15, 2002
6426521 Semiconductor device Jul. 30, 2002
6423986 Field-controlled high-power semiconductor devices Jul. 23, 2002
6396126 High voltage transistor using P+ buried layer May. 28, 2002
6291304 Method of fabricating a high voltage transistor using P+ buried layer Sep. 18, 2001
6285046 Controllable semiconductor structure with improved switching properties Sep. 4, 2001
6252259 Semiconductor switching device having different carrier lifetimes between a first portion serving as a main current path and the remaining portion of the device Jun. 26, 2001
6180965 Semiconductor device having a static induction in a recessed portion Jan. 30, 2001
6180959 Static induction semiconductor device, and driving method and drive circuit thereof Jan. 30, 2001
6159776 Method for manufacturing semiconductor device Dec. 12, 2000
6107649 Field-controlled high-power semiconductor devices Aug. 22, 2000
6011279 Silicon carbide field controlled bipolar switch Jan. 4, 2000
5956577 Method of manufacturing serrated gate-type or joined structure Sep. 21, 1999
5950075 Semiconductor device having recessed gate regions and method of manufacturing the same Sep. 7, 1999
5946572 Method of manufacturing a semiconductor device having recessed gate structures Aug. 31, 1999
5930651 Method of forming a semiconductor device having a plurality of cavity defined gating regions Jul. 27, 1999
5917204 Insulated gate bipolar transistor with reduced electric fields Jun. 29, 1999
5894140 Semiconductor device having recessed gate structures and method of manufacturing the same Apr. 13, 1999
5847417 Semiconductor device and method of manufacturing same Dec. 8, 1998
5841155 Semiconductor device containing two joined substrates Nov. 24, 1998
5773868 Semiconductor device and method of manufacturing the same Jun. 30, 1998
5757035 Semiconductor device May. 26, 1998
5753938 Static-induction transistors having heterojunction gates and methods of forming same May. 19, 1998
5702962 Fabrication process for a static induction transistor Dec. 30, 1997
5665987 Insulated gate static induction thyristor with a split gate type shorted cathode structure Sep. 9, 1997
5665988 Conductivity-modulation semiconductor Sep. 9, 1997
5648665 Semiconductor device having a plurality of cavity defined gating regions and a fabrication method therefor Jul. 15, 1997
5602405 Semiconductor device with base formed by the junction of two semiconductors of the same conductive type Feb. 11, 1997
5545905 Static induction semiconductor device with a static induction schottky shorted structure Aug. 13, 1996
5510274 Method of controlling a carrier lifetime in a semiconductor switching device Apr. 23, 1996
5489788 Insulated gate semiconductor device with improved short-circuit tolerance Feb. 6, 1996
5461242 Insulated gate static induction thyristor with a split gate type shorted cathode structure Oct. 24, 1995
5444271 Conductivity-modulated semiconductor device with high breakdown voltage Aug. 22, 1995
5426314 Insulated gate control static induction thyristor Jun. 20, 1995
5418376 Static induction semiconductor device with a distributed main electrode structure and static induction semiconductor device with a static induction main electrode shorted structure May. 23, 1995
5391897 Status induction semiconductor device Feb. 21, 1995
5378911 Structure of semiconductor device Jan. 3, 1995

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