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Class Information
Number: 257/E29.195
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Bipolar device (epo) > Transistor-type device (i.e., able to continuously respond to applied control signal) > Controlled by field effect (e.g., bipolar static induction transistor (bsit)) (epo) > Gated diode structure (epo)
Description: This subclass is indented under subclass E29.194. This subclass is substantially the same in scope as ECLA classification H01L29/739B.

Sub-classes under this class:

Class Number Class Name Patents
257/E29.196 With pn junction gate (e.g., field-controlled thyristor (fcth), static induction thyristor (sith)) (epo) 128

Patents under this class:
1 2

Patent Number Title Of Patent Date Issued
8541818 Semiconductor heterostructure diodes Sep. 24, 2013
8445946 Gated diode memory cells May. 21, 2013
8242537 IGBT with fast reverse recovery time rectifier and manufacturing method thereof Aug. 14, 2012
8237198 Semiconductor heterostructure diodes Aug. 7, 2012
8212282 Semiconductor device used in step-up DC-DC converter, and step-up DC-DC converter Jul. 3, 2012
8143655 Trench schottky barrier diode with differential oxide thickness Mar. 27, 2012
8143680 Gated diode with non-planar source region Mar. 27, 2012
8049223 Semiconductor device with large blocking voltage Nov. 1, 2011
7932537 Process-variation tolerant diode, standard cells including the same, tags and sensors containing the same, and methods for manufacturing the same Apr. 26, 2011
7898004 Semiconductor heterostructure diodes Mar. 1, 2011
7842967 Semiconductor device used in step-up DC-DC converter, and step-up DC-DC converter Nov. 30, 2010
7785973 Electronic device including a gate electrode having portions with different conductivity types and a process of forming the same Aug. 31, 2010
7732877 Gated diode with non-planar source region Jun. 8, 2010
7700466 Tunneling effect transistor with self-aligned gate Apr. 20, 2010
7528017 Method of manufacturing complementary diodes May. 5, 2009
7439591 Gate layer diode method and apparatus Oct. 21, 2008
7323402 Trench Schottky barrier diode with differential oxide thickness Jan. 29, 2008
7061050 Semiconductor device utilizing both fully and partially depleted devices Jun. 13, 2006
6967363 Lateral diode with multiple spacers Nov. 22, 2005
6943383 Diode and producing method thereof Sep. 13, 2005
6929983 Method of forming a current controlling device Aug. 16, 2005
6921931 Electrostatic discharge protection element Jul. 26, 2005
6894324 Silicon-on-insulator diodes and ESD protection circuits May. 17, 2005
6861680 Silicon-on-insulator diodes and ESD protection circuits Mar. 1, 2005
6855983 Semiconductor device having reduced on resistance Feb. 15, 2005
6855587 Gate-controlled, negative resistance diode device using band-to-band tunneling Feb. 15, 2005
6841837 Semiconductor device Jan. 11, 2005
6815719 Field effect transistor and image display apparatus using the same Nov. 9, 2004
6692998 Integrated high quality diode Feb. 17, 2004
6674123 MOS control diode and method for manufacturing the same Jan. 6, 2004
6661036 Semiconductor switches with evenly distributed fine control structures Dec. 9, 2003
6657240 Gate-controlled, negative resistance diode device using band-to-band tunneling Dec. 2, 2003
6653670 Silicon-on-insulator diodes and ESD protection circuits Nov. 25, 2003
6649944 Silicon-on-insulator diodes and ESD protection circuits Nov. 18, 2003
6617643 Low power tunneling metal-oxide-semiconductor (MOS) device Sep. 9, 2003
6600182 High current field-effect transistor Jul. 29, 2003
6537860 Method of fabricating power VLSI diode devices Mar. 25, 2003
6423986 Field-controlled high-power semiconductor devices Jul. 23, 2002
6245607 Buried channel quasi-unipolar transistor Jun. 12, 2001
6232163 Method of forming a semiconductor diode with depleted polysilicon gate structure May. 15, 2001
6107649 Field-controlled high-power semiconductor devices Aug. 22, 2000
6015993 Semiconductor diode with depleted polysilicon gate structure and method Jan. 18, 2000
6013950 Semiconductor diode with external field modulation Jan. 11, 2000
5977570 Semiconductor device and manufacturing method thereof Nov. 2, 1999
5936265 Semiconductor device including a tunnel effect element Aug. 10, 1999
5923066 Field-effect-controllable semiconductor component Jul. 13, 1999
5917204 Insulated gate bipolar transistor with reduced electric fields Jun. 29, 1999
5869847 Thin film transistor Feb. 9, 1999
5828101 Three-terminal semiconductor device and related semiconductor devices Oct. 27, 1998
5705827 Tunnel transistor and method of manufacturing same Jan. 6, 1998

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