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Class Information
Number: 257/E29.194
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Bipolar device (epo) > Transistor-type device (i.e., able to continuously respond to applied control signal) > Controlled by field effect (e.g., bipolar static induction transistor (bsit)) (epo)
Description: This subclass is indented under subclass E29.173. This subclass is substantially the same in scope as ECLA classification H01L29/739.










Sub-classes under this class:

Class Number Class Name Patents
257/E29.195 Gated diode structure (epo) 99
257/E29.197 Insulated gate bipolar mode transistor (e.g., igbt; igt; comfet) (epo) 249


Patents under this class:
1 2

Patent Number Title Of Patent Date Issued
8686424 Bipolar transistor manufacturing method, bipolar transistor and integrated circuit Apr. 1, 2014
8513774 Low-voltage structure for high-voltage electrostatic discharge protection Aug. 20, 2013
8404508 Enhancement mode GaN HEMT device and method for fabricating the same Mar. 26, 2013
8232583 Field effect power generation device Jul. 31, 2012
8049223 Semiconductor device with large blocking voltage Nov. 1, 2011
8017974 Semiconductor device with increased withstand voltage Sep. 13, 2011
7964895 III-nitride heterojunction semiconductor device and method of fabrication Jun. 21, 2011
7851825 Insulated gate e-mode transistors Dec. 14, 2010
7535039 Vertically integrated dual gate transistor structure and method of making same May. 19, 2009
7439563 High-breakdown-voltage semiconductor device Oct. 21, 2008
6987292 Schottky junction transistors and complementary circuits including the same Jan. 17, 2006
6906356 High voltage switch Jun. 14, 2005
6894367 Vertical bipolar transistor May. 17, 2005
6864131 Complementary Schottky junction transistors and methods of forming the same Mar. 8, 2005
6809354 Semiconductor device Oct. 26, 2004
6777780 Trench bipolar transistor Aug. 17, 2004
6767783 Self-aligned transistor and diode topologies in silicon carbide through the use of selective epitaxy or selective implantation Jul. 27, 2004
6638807 Technique for gated lateral bipolar transistors Oct. 28, 2003
6603186 Bipolar transistor with base drive circuit protection Aug. 5, 2003
6417554 Latch free IGBT with schottky gate Jul. 9, 2002
6365448 Structure and method for gated lateral bipolar transistors Apr. 2, 2002
6358786 Method for manufacturing lateral bipolar mode field effect transistor Mar. 19, 2002
6313488 Bipolar transistor having a low doped drift layer of crystalline SiC Nov. 6, 2001
6307235 Another technique for gated lateral bipolar transistors Oct. 23, 2001
6165828 Structure and method for gated lateral bipolar transistors Dec. 26, 2000
6084254 Lateral bipolar mode field effect transistor Jul. 4, 2000
6075272 Structure for gated lateral bipolar transistors Jun. 13, 2000
6037632 Semiconductor device Mar. 14, 2000
5998854 Semiconductor device Dec. 7, 1999
5789790 Semiconductor device Aug. 4, 1998
5739044 Method of manufacturing semiconductor device Apr. 14, 1998
5705824 Field controlled current modulators based on tunable barrier strengths Jan. 6, 1998
5627401 Bipolar transistor operating method with base charge controlled by back gate bias May. 6, 1997
5623151 MOS-gated power semiconductor devices with conductivity modulation by positive feedback mechanism Apr. 22, 1997
5591991 Semiconductor device and method of manufacturing the same Jan. 7, 1997
5508550 Semiconductor device including a lateral-type transistor Apr. 16, 1996
5485017 Semiconductor device and method of manufacturing same Jan. 16, 1996
5465001 Electronic component capable of negative dynamic resistance Nov. 7, 1995
5448104 Bipolar transistor with base charge controlled by back gate bias Sep. 5, 1995
5410160 Interband tunneling field effect transistor Apr. 25, 1995
5350934 Conductivity modulation type insulated gate field effect transistor Sep. 27, 1994
5345103 Gate controlled avalanche bipolar transistor Sep. 6, 1994
5184201 Static induction transistor Feb. 2, 1993
5159421 Double channel heterostructures Oct. 27, 1992
5140299 Article comprising a high value resistor Aug. 18, 1992
5111256 High speed semiconductor device and an optelectronic device May. 5, 1992
4965872 MOS-enhanced, self-aligned lateral bipolar transistor made of a semiconductor on an insulator Oct. 23, 1990
4945266 Composite semiconductor device Jul. 31, 1990
4941030 Semiconductor device Jul. 10, 1990
4922315 Control gate lateral silicon-on-insulator bipolar transistor May. 1, 1990

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