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Class Information
Number: 257/E29.193
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Bipolar device (epo) > Transistor-type device (i.e., able to continuously respond to applied control signal) > Bipolar junction transistor > Hetero-junction transistor (epo) > Vertical transistors (epo) > Comprising lattice mismatched active layers (e.g., sige strained layer transistors) (epo)
Description: This subclass is indented under subclass E29.189. This subclass is substantially the same in scope as ECLA classification H01L29/737B8.

Patents under this class:
1 2 3 4 5 6 7 8

Patent Number Title Of Patent Date Issued
8674447 Transistor with improved sigma-shaped embedded stressor and method of formation Mar. 18, 2014
8642413 Formation of strain-inducing films using hydrogenated amorphous silicon Feb. 4, 2014
8564018 Relaxed silicon germanium substrate with low defect density Oct. 22, 2013
8501508 Method of forming quantum well mosfet channels having uni-axial strains caused by metal source/drains Aug. 6, 2013
8455858 Semiconductor structure for reducing band-to-band tunneling (BTBT) leakage Jun. 4, 2013
8450179 Semiconductor device having a first bipolar device and a second bipolar device and method for fabrication May. 28, 2013
8441055 Methods for forming strained channel dynamic random access memory devices May. 14, 2013
8426265 Method for growing strain-inducing materials in CMOS circuits in a gate first flow Apr. 23, 2013
8377780 Transistors having stressed channel regions and methods of forming transistors having stressed channel regions Feb. 19, 2013
8357976 Wide bandgap device in parallel with a device that has a lower avalanche breakdown voltage and a higher forward voltage drop than the wide bandgap device Jan. 22, 2013
8350253 Integrated circuit with stress inserts Jan. 8, 2013
8343872 Method of forming strained structures with compound profiles in semiconductor devices Jan. 1, 2013
8344355 Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same Jan. 1, 2013
8293622 Semiconductor device fabrication method, semiconductor device, and semiconductor layer formation method Oct. 23, 2012
8288757 Semiconductor device and manufacturing method thereof Oct. 16, 2012
8274071 MOS devices with partial stressor channel Sep. 25, 2012
8253181 Strained channel dynamic random access memory devices Aug. 28, 2012
8253205 Method for forming strained channel PMOS devices and integrated circuits therefrom Aug. 28, 2012
8207040 Methods of manufacturing semiconductor devices including forming (111) facets in silicon capping layers on source/drain regions Jun. 26, 2012
8168501 Source/drain strained layers May. 1, 2012
8154051 MOS transistor with in-channel and laterally positioned stressors Apr. 10, 2012
8124473 Strain enhanced semiconductor devices and methods for their fabrication Feb. 28, 2012
8115194 Semiconductor device capable of providing identical strains to each channel region of the transistors Feb. 14, 2012
8110487 Method of creating a strained channel region in a transistor by deep implantation of strain-inducing species below the channel region Feb. 7, 2012
8093143 Method for producing a wafer comprising a silicon single crystal substrate having a front and a back side and a layer of SiGe deposited on the front side Jan. 10, 2012
8084784 Semiconductor heterostructure and method for forming same Dec. 27, 2011
8071435 Manufacture of semiconductor device with stress structure Dec. 6, 2011
8043919 Method of fabricating semiconductor device Oct. 25, 2011
8039869 Gallium nitride device substrate containing a lattice parameter altering element Oct. 18, 2011
8004035 Dual stress liner device and method Aug. 23, 2011
7994541 Semiconductor device and metal line fabrication method of the same Aug. 9, 2011
7985985 Semiconductor device and method of fabricating the same Jul. 26, 2011
7973337 Source/drain strained layers Jul. 5, 2011
7968414 Semiconductor device and production method thereof Jun. 28, 2011
7964865 Strained silicon on relaxed sige film with uniform misfit dislocation density Jun. 21, 2011
7960794 Non-planar pMOS structure with a strained channel region and an integrated strained CMOS flow Jun. 14, 2011
7956390 Semiconductor device and manufacturing method thereof Jun. 7, 2011
7943961 Strain bars in stressed layers of MOS devices May. 17, 2011
7939902 Field effect transistor having source and/or drain forming schottky or schottky-like contact with strained semiconductor substrate May. 10, 2011
7898028 Process for fabricating a strained channel MOSFET device Mar. 1, 2011
7892905 Formation of strained Si channel and Si.sub.1-xGe.sub.x source/drain structures using laser annealing Feb. 22, 2011
7892927 Transistor with a channel comprising germanium Feb. 22, 2011
7884353 Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same Feb. 8, 2011
7884354 Germanium on insulator (GOI) semiconductor substrates Feb. 8, 2011
7871877 Technique for strain engineering in silicon-based transistors by using implantation techniques for forming a strain-inducing layer under the channel region Jan. 18, 2011
7868317 MOS devices with partial stressor channel Jan. 11, 2011
7863162 Semiconductor device and manufacturing method thereof Jan. 4, 2011
7859057 Wide bandgap device in parallel with a device that has a lower avalanche breakdown voltage and a higher forward voltage drop than the wide bandgap device Dec. 28, 2010
7859013 Metal oxide field effect transistor with a sharp halo Dec. 28, 2010
7847281 Semiconductor device with strain in channel region and its manufacture method Dec. 7, 2010

1 2 3 4 5 6 7 8

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