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Class Information
Number: 257/E29.191
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Bipolar device (epo) > Transistor-type device (i.e., able to continuously respond to applied control signal) > Bipolar junction transistor > Hetero-junction transistor (epo) > Vertical transistors (epo) > Having emitter comprising one or more nonmonocrystalline elements of group iv (e.g., amorphous silicon) alloys comprising group iv elements (epo)
Description: This subclass is indented under subclass E29.189. This subclass is substantially the same in scope as ECLA classification H01L29/737B4.










Patents under this class:

Patent Number Title Of Patent Date Issued
8581260 Semiconductor device including a memory Nov. 12, 2013
8558234 Low voltage low light imager and photodetector Oct. 15, 2013
8227832 SiGe heterojunction bipolar transistor multi-finger structure Jul. 24, 2012
8193609 Heterojunction bipolar transistor device with electrostatic discharge ruggedness Jun. 5, 2012
7906796 Bipolar device and fabrication method thereof Mar. 15, 2011
7800093 Resistive memory including buried word lines Sep. 21, 2010
7045876 Amorphizing ion implant method for forming polysilicon emitter bipolar transistor May. 16, 2006
6979884 Bipolar transistor having self-aligned silicide and a self-aligned emitter contact border Dec. 27, 2005
6974977 Heterojunction bipolar transistor Dec. 13, 2005
6936519 Double polysilicon bipolar transistor and method of manufacture therefor Aug. 30, 2005
6815302 Method of making a bipolar transistor with an oxygen implanted emitter window Nov. 9, 2004
6773973 Semiconductor transistor having a polysilicon emitter and methods of making the same Aug. 10, 2004
6740563 Amorphizing ion implant method for forming polysilicon emitter bipolar transistor May. 25, 2004
6600178 Heterojunction bipolar transistor Jul. 29, 2003
6552375 Blocking of boron diffusion through the emitter-emitter poly interface in PNP HBTs through use of a SiC layer at the top of the emitter epi layer Apr. 22, 2003
6506659 High performance bipolar transistor Jan. 14, 2003
6362065 Blocking of boron diffusion through the emitter-emitter poly interface in PNP HBTs through use of a SiC layer at the top of the emitter epi layer Mar. 26, 2002
6114745 Bipolar transistor having high emitter efficiency Sep. 5, 2000
6028329 Bipolar junction transistor device and a method of fabricating the same Feb. 22, 2000
5846869 Method of manufacturing semiconductor integrated circuit device Dec. 8, 1998
5541444 Device and method of manufacturing the same and semiconductor device and method of manufacturing the same Jul. 30, 1996
5518937 Semiconductor device having a region doped to a level exceeding the solubility limit May. 21, 1996
5395774 Methods for forming a transistor having an emitter with enhanced efficiency Mar. 7, 1995
5374481 Polyemitter structure with improved interface control Dec. 20, 1994
5354696 Method of manufacturing a semiconductor device with a heterojunction by implantation with carbon-halogen compound Oct. 11, 1994
5350699 Method of manufacturing a hetero-junction bi-polar transistor Sep. 27, 1994
5272096 Method for making a bipolar transistor having a silicon carbide layer Dec. 21, 1993
5270224 Method of manufacturing a semiconductor device having a region doped to a level exceeding the solubility limit Dec. 14, 1993
5247192 Heterojunction bipolar transistor Sep. 21, 1993
5162255 Method for manufacturing a hetero bipolar transistor Nov. 10, 1992
5148252 Bipolar transistor Sep. 15, 1992
5144398 Semiconductor device and photoelectric conversion apparatus using the same Sep. 1, 1992
5111266 Semiconductor device having a region doped to a level exceeding the solubility limit May. 5, 1992
5108936 Method of producing a bipolar transistor having an amorphous emitter formed by plasma CVD Apr. 28, 1992
5028973 Bipolar transistor with high efficient emitter Jul. 2, 1991
4800415 Bipolar inversion channel device Jan. 24, 1989
4677456 Semiconductor structure and manufacturing method Jun. 30, 1987
4647958 Bipolar transistor construction Mar. 3, 1987
4559696 Ion implantation to increase emitter energy gap in bipolar transistors Dec. 24, 1985
4414557 Bipolar transistors Nov. 8, 1983
4302763 Semiconductor device Nov. 24, 1981
4289550 Method of forming closely spaced device regions utilizing selective etching and diffusion Sep. 15, 1981
4062034 Semiconductor device having a hetero junction Dec. 6, 1977











 
 
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