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Class Information
Number: 257/E29.19
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Bipolar device (epo) > Transistor-type device (i.e., able to continuously respond to applied control signal) > Bipolar junction transistor > Hetero-junction transistor (epo) > Vertical transistors (epo) > Having two-dimensional base (e.g., modulation-doped base, inversion layer base, delta-doped base) (epo)
Description: This subclass is indented under subclass E29.189. This subclass is substantially the same in scope as ECLA classification H01L29/737B2.










Patents under this class:

Patent Number Title Of Patent Date Issued
8643076 Non-volatile memory device and method for fabricating the same Feb. 4, 2014
8384130 Nitride semiconductor device having a two-dimensional electron gas (2DEG) channel Feb. 26, 2013
8115268 Solid-state imaging device with channel stop region with multiple impurity regions in depth direction and method for manufacturing the same Feb. 14, 2012
8022506 SOI device with more immunity from substrate voltage Sep. 20, 2011
7911024 Ultra-thin SOI vertical bipolar transistors with an inversion collector on thin-buried oxide (BOX) for low substrate-bias operation and methods thereof Mar. 22, 2011
7872330 Bipolar transistor with enhanced base transport Jan. 18, 2011
7808102 Multi-die DC-DC boost power converter with efficient packaging Oct. 5, 2010
7538412 Semiconductor device with a field stop zone May. 26, 2009
7429747 Sb-based CMOS devices Sep. 30, 2008
7375410 Ultra-thin SOI vertical bipolar transistors with an inversion collector on thin-buried oxide (BOX) for low substrate-bias operation and methods thereof May. 20, 2008
7102205 Bipolar transistor with extrinsic stress layer Sep. 5, 2006
6787822 Heterojunction III-V transistor, in particular HEMT field effect transistor or heterojunction bipolar transistor Sep. 7, 2004
5965931 Bipolar transistor having base region with coupled delta layers Oct. 12, 1999
5904536 Self aligned poly emitter bipolar technology using damascene technique May. 18, 1999
5798539 Bipolar transistor for very high frequencies Aug. 25, 1998
5567961 Semiconductor device Oct. 22, 1996
5381027 Semiconductor device having a heterojunction and a two dimensional gas as an active layer Jan. 10, 1995
5293084 High speed logic circuit Mar. 8, 1994
5258631 Semiconductor device having a two-dimensional electron gas as an active layer Nov. 2, 1993
5241197 Transistor provided with strained germanium layer Aug. 31, 1993
5099299 Modulation doped base heterojunction bipolar transistor Mar. 24, 1992
4926221 Bipolar hot electron transistor May. 15, 1990
4825269 Double heterojunction inversion base transistor Apr. 25, 1989
4825265 Transistor Apr. 25, 1989
4811070 Heterojunction bipolar transistor with inversion layer base Mar. 7, 1989
4800415 Bipolar inversion channel device Jan. 24, 1989
4326208 Semiconductor inversion layer transistor Apr. 20, 1982











 
 
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