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Class Information
Number: 257/E29.189
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Bipolar device (epo) > Transistor-type device (i.e., able to continuously respond to applied control signal) > Bipolar junction transistor > Hetero-junction transistor (epo) > Vertical transistors (epo)
Description: This subclass is indented under subclass E29.188. This subclass is substantially the same in scope as ECLA classification H01L29/737B.

Sub-classes under this class:

Class Number Class Name Patents
257/E29.193 Comprising lattice mismatched active layers (e.g., sige strained layer transistors) (epo) 354
257/E29.191 Having emitter comprising one or more nonmonocrystalline elements of group iv (e.g., amorphous silicon) alloys comprising group iv elements (epo) 43
257/E29.19 Having two-dimensional base (e.g., modulation-doped base, inversion layer base, delta-doped base) (epo) 27
257/E29.192 Resonant tunneling transistors (epo) 55

Patents under this class:
1 2 3 4 5 6 7 8 9

Patent Number Title Of Patent Date Issued
8692295 Transistor with InGaAsP collector region and integrated opto-electronic devices employing same Apr. 8, 2014
8664697 Transistor device Mar. 4, 2014
8546874 Power switching semiconductor devices including rectifying junction-shunts Oct. 1, 2013
8395225 Semiconductor device, an electronic device and an electronic apparatus Mar. 12, 2013
8395237 Group nitride bipolar transistor Mar. 12, 2013
8338863 Vertical heterojunction bipolar transistors with reduced base-collector junction capacitance Dec. 25, 2012
8309409 Method for fabricating trench gate to prevent on voltage parasetic influences Nov. 13, 2012
8309990 Integrated devices on a common compound semiconductor III-V wafer Nov. 13, 2012
8288797 Integrated devices on a common compound semiconductor III-V wafer Oct. 16, 2012
8101973 Transistor Jan. 24, 2012
8034688 Methods of forming power switching semiconductor devices including rectifying junction-shunts Oct. 11, 2011
7989844 Semiconductor device and method of manufacturing such a device Aug. 2, 2011
7910984 Semiconductor device and method for manufacturing same Mar. 22, 2011
7893463 Integrated devices on a common compound semiconductor III-V wafer Feb. 22, 2011
7868335 Modulation doped super-lattice sub-collector for high-performance HBTs and BJTs Jan. 11, 2011
7863174 Vertical pillar transistor Jan. 4, 2011
7842591 Method of fabricating short-gate-length electrodes for integrated III-V compound semiconductor devices Nov. 30, 2010
7842973 Semiconductor device and manufacturing method of the same Nov. 30, 2010
7843004 Power MOSFET with recessed field plate Nov. 30, 2010
7821037 Heterojunction bipolar transistor Oct. 26, 2010
7709889 Semiconductor device with improved breakdown properties and manufacturing method thereof May. 4, 2010
7670911 Method for manufacturing vertical MOS transistor Mar. 2, 2010
7598567 Power switching semiconductor devices including rectifying junction-shunts Oct. 6, 2009
7586130 Vertical field effect transistor using linear structure as a channel region and method for fabricating the same Sep. 8, 2009
7482643 Semiconductor device Jan. 27, 2009
7462892 Semiconductor device Dec. 9, 2008
7345327 Bipolar transistor Mar. 18, 2008
7297993 Bipolar transistor and fabrication method of the same Nov. 20, 2007
7282753 Vertical conducting power semiconducting devices made by deep reactive ion etching Oct. 16, 2007
7276754 Annular gate and technique for fabricating an annular gate Oct. 2, 2007
7091553 Top oxide nitride liner integration scheme for vertical DRAM Aug. 15, 2006
7067857 Semiconductor device having led out conductor layers, manufacturing method of the same, and semiconductor module Jun. 27, 2006
7045877 Semiconductor protection device May. 16, 2006
7038244 Semiconductor device and method of manufacturing the same May. 2, 2006
7038250 Semiconductor device suited for a high frequency amplifier May. 2, 2006
7038300 Apparatus with improved layers of group III-nitride semiconductor May. 2, 2006
7030003 Compound semiconductor device, production method thereof, light-emitting device and transistor Apr. 18, 2006
7030429 Hetero-junction bipolar transistor and the method for producing the same Apr. 18, 2006
7030462 Heterojunction bipolar transistor having specified lattice constants Apr. 18, 2006
7019340 Bipolar transistor device and method for fabricating the same Mar. 28, 2006
7012288 Heterojunction bipolar transistor having non-uniformly doped collector for improved safe-operating area Mar. 14, 2006
7001820 Heterojunction bipolar transistor and method for fabricating the same Feb. 21, 2006
7001813 Layers of group III-nitride semiconductor made by processes with multi-step epitaxial growths Feb. 21, 2006
6998320 Passivation layer for group III-V semiconductor devices Feb. 14, 2006
6992337 Gallium arsenide antimonide (GaAsSB)/indium phosphide (InP) heterojunction bipolar transistor (HBT) having reduced tunneling probability Jan. 31, 2006
6989581 Wide band gap bipolar transistor with reduced thermal runaway Jan. 24, 2006
6984871 Semiconductor device with high structural reliability and low parasitic capacitance Jan. 10, 2006
6982441 Semiconductor device with a super lattice buffer Jan. 3, 2006
6974969 P-type quantum-well-base bipolar transistor device employing interdigitated base and emitter formed with a capping layer Dec. 13, 2005
6974743 Method of making encapsulated spacers in vertical pass gate DRAM and damascene logic gates Dec. 13, 2005

1 2 3 4 5 6 7 8 9

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