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Class Information
Number: 257/E29.188
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Bipolar device (epo) > Transistor-type device (i.e., able to continuously respond to applied control signal) > Bipolar junction transistor > Hetero-junction transistor (epo)
Description: This subclass is indented under subclass E29.174. This subclass is substantially the same in scope as ECLA classification H01L29/737.










Sub-classes under this class:

Class Number Class Name Patents
257/E29.189 Vertical transistors (epo) 449


Patents under this class:
1 2

Patent Number Title Of Patent Date Issued
8592870 Pseudo buried layer and manufacturing method of the same, deep hole contact and bipolar transistor Nov. 26, 2013
8519443 Method for making a heterojunction bipolar transistor Aug. 27, 2013
8415762 Semiconductor device for performing photoelectric conversion Apr. 9, 2013
8395237 Group nitride bipolar transistor Mar. 12, 2013
8299500 Silicon germanium heterojunction bipolar transistor having interstitial trapping layer in base region Oct. 30, 2012
8247843 GaN-based permeable base transistor and method of fabrication Aug. 21, 2012
8212288 Compound semiconductor substrate comprising a multilayer buffer layer Jul. 3, 2012
8129725 Semiconductor sensor Mar. 6, 2012
8101491 Heterojunction bipolar transistor Jan. 24, 2012
8084786 Silicided base structure for high frequency transistors Dec. 27, 2011
7968865 Boron aluminum nitride diamond heterostructure Jun. 28, 2011
7960758 Bipolar transistor and radio frequency amplifier circuit Jun. 14, 2011
RE42423 Contact method for thin silicon carbide epitaxial layer and semiconductor devices formed by those methods Jun. 7, 2011
7923754 Bipolar transistor Apr. 12, 2011
7915640 Heterojunction semiconductor device and method of manufacturing Mar. 29, 2011
7842537 Stressed semiconductor using carbon and method for producing the same Nov. 30, 2010
7759703 Photo-detector array device with ROIC monolithically integrated for laser-radar image signal and manufacturing method thereof Jul. 20, 2010
7728357 Heterojunction bipolar transistor and manufacturing method thereof Jun. 1, 2010
7723750 MOSFET with super-steep retrograded island May. 25, 2010
7714361 Bipolar junction transistor having a high germanium concentration in a silicon-germanium layer and a method for forming the bipolar junction transistor May. 11, 2010
7705426 Integration of a SiGe- or SiGeC-based HBT with a SiGe- or SiGeC-strapped semiconductor device Apr. 27, 2010
7679105 Hetero junction bipolar transistor and method of manufacturing the same Mar. 16, 2010
7642569 Transistor structure with minimized parasitics and method of fabricating the same Jan. 5, 2010
7638820 Contact method for thin silicon carbide epitaxial layer and semiconductor devices formed by those methods Dec. 29, 2009
7595544 Semiconductor device and manufacturing method thereof Sep. 29, 2009
7566919 Method to reduce seedlayer topography in BICMOS process Jul. 28, 2009
7566920 Bipolar transistor and power amplifier Jul. 28, 2009
7564075 Semiconductor device Jul. 21, 2009
7514727 Active element and switching circuit device Apr. 7, 2009
7498620 Integration of phosphorus emitter in an NPN device in a BiCMOS process Mar. 3, 2009
7482643 Semiconductor device Jan. 27, 2009
7468524 Field-effect transistor Dec. 23, 2008
7462892 Semiconductor device Dec. 9, 2008
7449729 Heterojunction bipolar transistor and method for fabricating the same Nov. 11, 2008
7425721 Field-effect transistor Sep. 16, 2008
7391062 Semiconductor structures using a group III-nitride material system with reduced phase separation and method of fabrication Jun. 24, 2008
7345327 Bipolar transistor Mar. 18, 2008
7317215 SiGe heterojunction bipolar transistor (HBT) Jan. 8, 2008
7297992 Method and structure for integration of phosphorous emitter in an NPN device in a BiCMOS process Nov. 20, 2007
7297993 Bipolar transistor and fabrication method of the same Nov. 20, 2007
7268376 Bipolar transistor for increasing signal transfer efficiency and method of manufacturing the same Sep. 11, 2007
7235822 Transistor with silicon and carbon layer in the channel region Jun. 26, 2007
7224005 Heterojunction bipolar transistor structure May. 29, 2007
7202136 Silicon germanium heterojunction bipolar transistor with carbon incorporation Apr. 10, 2007
7190047 Transistors and methods for making the same Mar. 13, 2007
7144787 Methods to improve the SiGe heterojunction bipolar device performance Dec. 5, 2006
7132701 Contact method for thin silicon carbide epitaxial layer and semiconductor devices formed by those methods Nov. 7, 2006
7129530 Semiconductor device Oct. 31, 2006
7115918 Collector layer structure for a double hetero-junction bipolar transistor for power amplification applications Oct. 3, 2006
7026690 Memory devices and electronic systems comprising integrated bipolar and FET devices Apr. 11, 2006

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