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Class Information
Number: 257/E29.186
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Bipolar device (epo) > Transistor-type device (i.e., able to continuously respond to applied control signal) > Bipolar junction transistor > Vertical transistor (epo) > Inverse vertical transistor (epo)
Description: This subclass is indented under subclass E29.183. This subclass is substantially the same in scope as ECLA classification H01L29/732D.










Patents under this class:

Patent Number Title Of Patent Date Issued
8395237 Group nitride bipolar transistor Mar. 12, 2013
7952172 Semiconductor optical element May. 31, 2011
7859026 Vertical semiconductor device Dec. 28, 2010
7586130 Vertical field effect transistor using linear structure as a channel region and method for fabricating the same Sep. 8, 2009
7364997 Methods of forming integrated circuitry and methods of forming local interconnects Apr. 29, 2008
6768139 Transistor configuration for a bandgap circuit Jul. 27, 2004
6461927 Semiconductor device and method of producing the same Oct. 8, 2002
5311055 Trenched bipolar transistor structures May. 10, 1994
5296389 Method of fabricating a heterojunction bipolar transistor Mar. 22, 1994
5160994 Heterojunction bipolar transistor with improved base layer Nov. 3, 1992
5053346 Method for making a high speed gallium arsenide transistor Oct. 1, 1991
5036372 Heterojunction avalanche transistor Jul. 30, 1991
4984048 Semiconductor device with buried side contact Jan. 8, 1991
4956688 Radiation resistant bipolar memory Sep. 11, 1990
4956689 High speed gallium arsenide transistor and method Sep. 11, 1990
4811064 Static induction transistor and integrated circuit device using same Mar. 7, 1989
4654960 Method for fabricating GaAs bipolar integrated circuit devices Apr. 7, 1987
4641419 Fabricating an integrated circuit device having a vertical pnp transistor Feb. 10, 1987
4586071 Heterostructure bipolar transistor Apr. 29, 1986
4573064 GaAs/GaAlAs Heterojunction bipolar integrated circuit devices Feb. 25, 1986
4326212 Structure and process for optimizing the characteristics of I.sup.2 L devices Apr. 20, 1982
4160986 Bipolar transistors having fixed gain characteristics Jul. 10, 1979
4130826 Monolithic integrated semiconductor circuit Dec. 19, 1978
4127860 Integrated circuit mesa bipolar device on insulating substrate incorporating Schottky barrier contact Nov. 28, 1978
4107719 Inverse planar transistor Aug. 15, 1978
4045251 Process for producing an inversely operated transistor Aug. 30, 1977
4027324 Bidirectional transistor May. 31, 1977
3982266 Integrated injection logic having high inverse current gain Sep. 21, 1976











 
 
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