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Class Information
Number: 257/E29.185
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Bipolar device (epo) > Transistor-type device (i.e., able to continuously respond to applied control signal) > Bipolar junction transistor > Vertical transistor (epo) > Having emitter-base junction and base-collector junction on different surfaces (e.g., mesa planar transistor) (epo)
Description: This subclass is indented under subclass E29.183. This subclass is substantially the same in scope as ECLA classification H01L29/732C.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7592648 |
Integrated circuit arrangement with NPN and PNP bipolar transistors and corresponding production method |
Sep. 22, 2009 |
| 7554174 |
Bipolar transistor having semiconductor patterns filling contact windows of an insulating layer |
Jun. 30, 2009 |
| 7329941 |
Creating increased mobility in a bipolar device |
Feb. 12, 2008 |
| 7323390 |
Semiconductor device and method for production thereof |
Jan. 29, 2008 |
| 7297993 |
Bipolar transistor and fabrication method of the same |
Nov. 20, 2007 |
| 7084044 |
Optoelectronic device and method of manufacture thereof |
Aug. 1, 2006 |
| 6657242 |
Trench-isolated bipolar devices |
Dec. 2, 2003 |
| 6355971 |
Semiconductor switch devices having a region with three distinct zones and their manufacture |
Mar. 12, 2002 |
| 6121102 |
Method of electrical connection through an isolation trench to form trench-isolated bipolar devices |
Sep. 19, 2000 |
| 5807780 |
High frequency analog transistors method of fabrication and circuit implementation |
Sep. 15, 1998 |
| 5668397 |
High frequency analog transistors, method of fabrication and circuit implementation |
Sep. 16, 1997 |
| 5569952 |
Semiconductor device with a semiconductor element provided in a mesa structure |
Oct. 29, 1996 |
| 5508552 |
Transistors with multiple emitters, and transistors with substantially square base emitter junctions |
Apr. 16, 1996 |
| 5455448 |
Bipolar, monolithic, high-power RF transistor with isolated top collector |
Oct. 3, 1995 |
| 5387813 |
Transistors with emitters having at least three sides |
Feb. 7, 1995 |
| 5374846 |
Bipolar transistor with a particular base and collector regions |
Dec. 20, 1994 |
| 5358882 |
Method for manufacturing a bipolar transistor in a substrate |
Oct. 25, 1994 |
| 5318917 |
Method of fabricating semiconductor device |
Jun. 7, 1994 |
| 5298779 |
Collector of a bipolar transistor compatible with MOS technology |
Mar. 29, 1994 |
| 5280188 |
Method of manufacturing a semiconductor integrated circuit device having at least one bipolar transistor and a plurality of MOS transistors |
Jan. 18, 1994 |
| 5250838 |
Semiconductor device comprising an integrated circuit having a vertical bipolar transistor |
Oct. 5, 1993 |
| 5221856 |
Bipolar transistor with floating guard region under extrinsic base |
Jun. 22, 1993 |
| 5219768 |
Method for fabricating a semiconductor device |
Jun. 15, 1993 |
| 5214302 |
Semiconductor integrated circuit device forming on a common substrate MISFETs isolated by a field oxide and bipolar transistors isolated by a groove |
May. 25, 1993 |
| 5204274 |
Method of fabricating semiconductor device |
Apr. 20, 1993 |
| 5198372 |
Method for making a shallow junction bipolar transistor and transistor formed thereby |
Mar. 30, 1993 |
| 5144408 |
Semiconductor integrated circuit device and method of manufacturing the same |
Sep. 1, 1992 |
| 5141888 |
Process of manufacturing semiconductor integrated circuit device having trench and field isolation regions |
Aug. 25, 1992 |
| 5104816 |
Polysilicon self-aligned bipolar device including trench isolation and process of manufacturing same |
Apr. 14, 1992 |
| 5098638 |
Method of manufacturing a semiconductor device |
Mar. 24, 1992 |
| 5089873 |
Integrated circuit having a vertical transistor |
Feb. 18, 1992 |
| 5059544 |
Method of forming bipolar transistor having self-aligned emitter-base using selective and non-selective epitaxy |
Oct. 22, 1991 |
| 5024956 |
Method of manufacturing a semiconductor device including mesa bipolar transistor with edge contacts |
Jun. 18, 1991 |
| 5011788 |
Process of manufacturing semiconductor integrated circuit device and product formed thereby |
Apr. 30, 1991 |
| 5001533 |
Bipolar transistor with side wall base contacts |
Mar. 19, 1991 |
| 4992843 |
Collector contact of an integrated bipolar transistor |
Feb. 12, 1991 |
| 4984048 |
Semiconductor device with buried side contact |
Jan. 8, 1991 |
| 4979010 |
VLSI self-aligned bipolar transistor |
Dec. 18, 1990 |
| 4968635 |
Method of forming emitter of a bipolar transistor in monocrystallized film |
Nov. 6, 1990 |
| 4969026 |
Mesa bipolar transistor with edge contacts |
Nov. 6, 1990 |
| 4935375 |
Method of making a semiconductor device |
Jun. 19, 1990 |
| 4933733 |
Slot collector transistor |
Jun. 12, 1990 |
| H763 |
Submicron bipolar transistor with edge contacts |
Apr. 3, 1990 |
| 4912538 |
Structured semiconductor body |
Mar. 27, 1990 |
| 4887145 |
Semiconductor device in which electrodes are formed in a self-aligned manner |
Dec. 12, 1989 |
| 4866000 |
Fabrication method for semiconductor integrated circuits |
Sep. 12, 1989 |
| 4857479 |
Method of making poly-sidewall contact transistors |
Aug. 15, 1989 |
| 4829015 |
Method for manufacturing a fully self-adjusted bipolar transistor |
May. 9, 1989 |
| 4819055 |
Semiconductor device having a PN junction formed on an insulator film |
Apr. 4, 1989 |
| 4819054 |
Semiconductor IC with dual groove isolation |
Apr. 4, 1989 |
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