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Class Information
Number: 257/E29.185
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Bipolar device (epo) > Transistor-type device (i.e., able to continuously respond to applied control signal) > Bipolar junction transistor > Vertical transistor (epo) > Having emitter-base junction and base-collector junction on different surfaces (e.g., mesa planar transistor) (epo)
Description: This subclass is indented under subclass E29.183. This subclass is substantially the same in scope as ECLA classification H01L29/732C.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8685805 Semiconductor devices with connection patterns Apr. 1, 2014
8598678 Parasitic vertical PNP bipolar transistor and its fabrication method in BiCMOS process Dec. 3, 2013
8519443 Method for making a heterojunction bipolar transistor Aug. 27, 2013
8395237 Group nitride bipolar transistor Mar. 12, 2013
8357985 Bipolar transistor with guard region Jan. 22, 2013
8350352 Bipolar transistor Jan. 8, 2013
8148737 Light emitting device, light emitting device package and lighting system Apr. 3, 2012
8120136 Bipolar transistor Feb. 21, 2012
8115256 Semiconductor device Feb. 14, 2012
7989844 Semiconductor device and method of manufacturing such a device Aug. 2, 2011
7936034 Mesa structure photon detection circuit May. 3, 2011
7898024 Semiconductor device and method for manufacturing the same Mar. 1, 2011
7868424 Semiconductor device and method of manufacturing the same Jan. 11, 2011
7838377 Power semiconductor devices with mesa structures and buffer layers including mesa steps Nov. 23, 2010
7821037 Heterojunction bipolar transistor Oct. 26, 2010
7800093 Resistive memory including buried word lines Sep. 21, 2010
7645689 Gallium nitride-based light emitting device having ESD protection capacity and method for manufacturing the same Jan. 12, 2010
7592648 Integrated circuit arrangement with NPN and PNP bipolar transistors and corresponding production method Sep. 22, 2009
7554174 Bipolar transistor having semiconductor patterns filling contact windows of an insulating layer Jun. 30, 2009
7329941 Creating increased mobility in a bipolar device Feb. 12, 2008
7323390 Semiconductor device and method for production thereof Jan. 29, 2008
7297993 Bipolar transistor and fabrication method of the same Nov. 20, 2007
7084044 Optoelectronic device and method of manufacture thereof Aug. 1, 2006
6657242 Trench-isolated bipolar devices Dec. 2, 2003
6355971 Semiconductor switch devices having a region with three distinct zones and their manufacture Mar. 12, 2002
6121102 Method of electrical connection through an isolation trench to form trench-isolated bipolar devices Sep. 19, 2000
5807780 High frequency analog transistors method of fabrication and circuit implementation Sep. 15, 1998
5668397 High frequency analog transistors, method of fabrication and circuit implementation Sep. 16, 1997
5569952 Semiconductor device with a semiconductor element provided in a mesa structure Oct. 29, 1996
5508552 Transistors with multiple emitters, and transistors with substantially square base emitter junctions Apr. 16, 1996
5455448 Bipolar, monolithic, high-power RF transistor with isolated top collector Oct. 3, 1995
5387813 Transistors with emitters having at least three sides Feb. 7, 1995
5374846 Bipolar transistor with a particular base and collector regions Dec. 20, 1994
5358882 Method for manufacturing a bipolar transistor in a substrate Oct. 25, 1994
5318917 Method of fabricating semiconductor device Jun. 7, 1994
5298779 Collector of a bipolar transistor compatible with MOS technology Mar. 29, 1994
5280188 Method of manufacturing a semiconductor integrated circuit device having at least one bipolar transistor and a plurality of MOS transistors Jan. 18, 1994
5250838 Semiconductor device comprising an integrated circuit having a vertical bipolar transistor Oct. 5, 1993
5221856 Bipolar transistor with floating guard region under extrinsic base Jun. 22, 1993
5219768 Method for fabricating a semiconductor device Jun. 15, 1993
5214302 Semiconductor integrated circuit device forming on a common substrate MISFETs isolated by a field oxide and bipolar transistors isolated by a groove May. 25, 1993
5204274 Method of fabricating semiconductor device Apr. 20, 1993
5198372 Method for making a shallow junction bipolar transistor and transistor formed thereby Mar. 30, 1993
5144408 Semiconductor integrated circuit device and method of manufacturing the same Sep. 1, 1992
5141888 Process of manufacturing semiconductor integrated circuit device having trench and field isolation regions Aug. 25, 1992
5104816 Polysilicon self-aligned bipolar device including trench isolation and process of manufacturing same Apr. 14, 1992
5098638 Method of manufacturing a semiconductor device Mar. 24, 1992
5089873 Integrated circuit having a vertical transistor Feb. 18, 1992
5059544 Method of forming bipolar transistor having self-aligned emitter-base using selective and non-selective epitaxy Oct. 22, 1991
5024956 Method of manufacturing a semiconductor device including mesa bipolar transistor with edge contacts Jun. 18, 1991

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