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Class Information
Number: 257/E29.183
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Bipolar device (epo) > Transistor-type device (i.e., able to continuously respond to applied control signal) > Bipolar junction transistor > Vertical transistor (epo)
Description: This subclass is indented under subclass E29.174. This subclass is substantially the same in scope as ECLA classification H01L29/732.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7619299 |
Semiconductor device and method of manufacturing the same |
Nov. 17, 2009 |
| 7605046 |
Active matrix structure for a display device and method for its manufacture |
Oct. 20, 2009 |
| 7586130 |
Vertical field effect transistor using linear structure as a channel region and method for fabricating the same |
Sep. 8, 2009 |
| 7554160 |
Semiconductor device |
Jun. 30, 2009 |
| 7554137 |
Power semiconductor component with charge compensation structure and method for the fabrication thereof |
Jun. 30, 2009 |
| 7547958 |
Semiconductor device, electronic device, and manufacturing method of the same |
Jun. 16, 2009 |
| 7528461 |
Bipolar power transistor and related integrated device with clamp means of the collector voltage |
May. 5, 2009 |
| 7482650 |
Method of manufacturing a semiconductor integrated circuit device having a columnar laminate |
Jan. 27, 2009 |
| 7375410 |
Ultra-thin SOI vertical bipolar transistors with an inversion collector on thin-buried oxide (BOX) for low substrate-bias operation and methods thereof |
May. 20, 2008 |
| 7364997 |
Methods of forming integrated circuitry and methods of forming local interconnects |
Apr. 29, 2008 |
| 7288829 |
Bipolar transistor with self-aligned retrograde extrinsic base implant profile and self-aligned silicide |
Oct. 30, 2007 |
| 7276754 |
Annular gate and technique for fabricating an annular gate |
Oct. 2, 2007 |
| 7170106 |
Power semiconductor device |
Jan. 30, 2007 |
| 7164174 |
Single poly-emitter PNP using dwell diffusion in a BiCMOS technology |
Jan. 16, 2007 |
| 7075126 |
Transistor structure with minimized parasitics and method of fabricating the same |
Jul. 11, 2006 |
| 7071500 |
Semiconductor device and manufacturing method for the same |
Jul. 4, 2006 |
| 7064417 |
Semiconductor device including a bipolar transistor |
Jun. 20, 2006 |
| 7038298 |
High f.sub.T and f.sub.max bipolar transistor and method of making same |
May. 2, 2006 |
| 7009209 |
Silicon carbide and related wide-bandgap transistors on semi-insulating epitaxy for high-speed, high-power applications |
Mar. 7, 2006 |
| 7005359 |
Bipolar junction transistor with improved extrinsic base region and method of fabrication |
Feb. 28, 2006 |
| 7002221 |
Bipolar transistor having raised extrinsic base with selectable self-alignment and methods of forming same |
Feb. 21, 2006 |
| 7001806 |
Semiconductor structure with increased breakdown voltage and method for producing the semiconductor structure |
Feb. 21, 2006 |
| 6984872 |
Method for fabricating an NPN transistor in a BICMOS technology |
Jan. 10, 2006 |
| 6982440 |
Silicon carbide semiconductor devices with a regrown contact layer |
Jan. 3, 2006 |
| 6979884 |
Bipolar transistor having self-aligned silicide and a self-aligned emitter contact border |
Dec. 27, 2005 |
| 6960820 |
Bipolar transistor self-alignment with raised extrinsic base extension and methods of forming same |
Nov. 1, 2005 |
| 6949438 |
Method of fabricating a bipolar junction transistor |
Sep. 27, 2005 |
| 6949812 |
Method for manufacturing a high frequency semiconductor structure and high frequency semiconductor structure |
Sep. 27, 2005 |
| 6940357 |
Bipolar transistor, for voltage controlled oscillator using a capacitance adjustment line |
Sep. 6, 2005 |
| 6936519 |
Double polysilicon bipolar transistor and method of manufacture therefor |
Aug. 30, 2005 |
| 6933796 |
Voltage controlled oscillating circuit |
Aug. 23, 2005 |
| 6914308 |
Vertical PNP bipolar transistor |
Jul. 5, 2005 |
| 6911715 |
Bipolar transistors and methods of manufacturing the same |
Jun. 28, 2005 |
| 6891250 |
Semiconductor device with bipolar transistor |
May. 10, 2005 |
| 6888221 |
BICMOS technology on SIMOX wafers |
May. 3, 2005 |
| 6881638 |
Method of fabricating a bipolar junction transistor |
Apr. 19, 2005 |
| 6870184 |
Mechanically-stable BJT with reduced base-collector capacitance |
Mar. 22, 2005 |
| 6864560 |
Bipolar transistor structure with a shallow isolation extension region providing reduced parasitic capacitance |
Mar. 8, 2005 |
| 6858485 |
Method for creation of a very narrow emitter feature |
Feb. 22, 2005 |
| 6856004 |
Compact layout for a semiconductor device |
Feb. 15, 2005 |
| 6849874 |
Minimizing degradation of SiC bipolar semiconductor devices |
Feb. 1, 2005 |
| 6841829 |
Self protecting bipolar SCR |
Jan. 11, 2005 |
| 6838709 |
Bipolar transistor |
Jan. 4, 2005 |
| 6818492 |
Semiconductor device and manufacturing method thereof |
Nov. 16, 2004 |
| 6815304 |
Silicon carbide bipolar junction transistor with overgrown base region |
Nov. 9, 2004 |
| 6812545 |
Epitaxial base bipolar transistor with raised extrinsic base |
Nov. 2, 2004 |
| 6784499 |
Semiconductor device serving as a protecting element |
Aug. 31, 2004 |
| 6774455 |
Semiconductor device with a collector contact in a depressed well-region |
Aug. 10, 2004 |
| 6767783 |
Self-aligned transistor and diode topologies in silicon carbide through the use of selective epitaxy or selective implantation |
Jul. 27, 2004 |
| 6764907 |
Method of fabricating self-aligned silicon carbide semiconductor devices |
Jul. 20, 2004 |
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