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Class Information
Number: 257/E29.183
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Bipolar device (epo) > Transistor-type device (i.e., able to continuously respond to applied control signal) > Bipolar junction transistor > Vertical transistor (epo)
Description: This subclass is indented under subclass E29.174. This subclass is substantially the same in scope as ECLA classification H01L29/732.

Sub-classes under this class:

Class Number Class Name Patents
257/E29.184 Having emitter-base and base-collector junctions in same plane (epo) 264
257/E29.185 Having emitter-base junction and base-collector junction on different surfaces (e.g., mesa planar transistor) (epo) 122
257/E29.186 Inverse vertical transistor (epo) 28

Patents under this class:
1 2 3 4 5 6

Patent Number Title Of Patent Date Issued
8680607 Trench gated power device with multiple trench width and its fabrication process Mar. 25, 2014
8674402 Power semiconductor device and methods for fabricating the same Mar. 18, 2014
8637959 Vertical parasitic PNP device in a BiCMOS process and manufacturing method of the same Jan. 28, 2014
8536642 Semiconductor device and method for manufacturing the same Sep. 17, 2013
8487362 Semiconductor device and method of forming the same Jul. 16, 2013
8395237 Group nitride bipolar transistor Mar. 12, 2013
8378417 Semiconductor device including a well potential supply device and a vertical MOS transistor Feb. 19, 2013
8357952 Power semiconductor structure with field effect rectifier and fabrication method thereof Jan. 22, 2013
8338873 Semiconductor memory device including active pillars and gate pattern Dec. 25, 2012
8334564 Field plate trench transistor and method for producing it Dec. 18, 2012
8283705 Junction field effect transistor, integrated circuit for switching power supply, and switching power supply Oct. 9, 2012
8232623 Semiconductor device Jul. 31, 2012
8174070 Dual channel trench LDMOS transistors and BCD process with deep trench isolation May. 8, 2012
8101993 MSD integrated circuits with shallow trench Jan. 24, 2012
8039322 Semiconductor device and manufacturing method thereof Oct. 18, 2011
7982248 Junction field effect transistor, integrated circuit for switching power supply, and switching power supply Jul. 19, 2011
7968940 Insulated gate bipolar transistor device comprising a depletion-mode MOSFET Jun. 28, 2011
7911024 Ultra-thin SOI vertical bipolar transistors with an inversion collector on thin-buried oxide (BOX) for low substrate-bias operation and methods thereof Mar. 22, 2011
7893486 Field plate trench transistor and method for producing it Feb. 22, 2011
7888712 Semiconductor device and method for manufacturing same Feb. 15, 2011
7880270 Vertical bipolar transistor Feb. 1, 2011
7847401 Methods, systems and structures for forming semiconductor structures incorporating high-temperature processing steps Dec. 7, 2010
7843004 Power MOSFET with recessed field plate Nov. 30, 2010
7829940 Semiconductor component arrangement having a component with a drift zone and a drift control zone Nov. 9, 2010
7800152 Methods for manufacturing a finfet using a conventional wafer and apparatus manufactured therefrom Sep. 21, 2010
7709889 Semiconductor device with improved breakdown properties and manufacturing method thereof May. 4, 2010
7670911 Method for manufacturing vertical MOS transistor Mar. 2, 2010
7619299 Semiconductor device and method of manufacturing the same Nov. 17, 2009
7605046 Active matrix structure for a display device and method for its manufacture Oct. 20, 2009
7586130 Vertical field effect transistor using linear structure as a channel region and method for fabricating the same Sep. 8, 2009
7554137 Power semiconductor component with charge compensation structure and method for the fabrication thereof Jun. 30, 2009
7554160 Semiconductor device Jun. 30, 2009
7547958 Semiconductor device, electronic device, and manufacturing method of the same Jun. 16, 2009
7528461 Bipolar power transistor and related integrated device with clamp means of the collector voltage May. 5, 2009
7482650 Method of manufacturing a semiconductor integrated circuit device having a columnar laminate Jan. 27, 2009
7375410 Ultra-thin SOI vertical bipolar transistors with an inversion collector on thin-buried oxide (BOX) for low substrate-bias operation and methods thereof May. 20, 2008
7364997 Methods of forming integrated circuitry and methods of forming local interconnects Apr. 29, 2008
7288829 Bipolar transistor with self-aligned retrograde extrinsic base implant profile and self-aligned silicide Oct. 30, 2007
7276754 Annular gate and technique for fabricating an annular gate Oct. 2, 2007
7170106 Power semiconductor device Jan. 30, 2007
7164174 Single poly-emitter PNP using dwell diffusion in a BiCMOS technology Jan. 16, 2007
7075126 Transistor structure with minimized parasitics and method of fabricating the same Jul. 11, 2006
7071500 Semiconductor device and manufacturing method for the same Jul. 4, 2006
7064417 Semiconductor device including a bipolar transistor Jun. 20, 2006
7038298 High f.sub.T and f.sub.max bipolar transistor and method of making same May. 2, 2006
7009209 Silicon carbide and related wide-bandgap transistors on semi-insulating epitaxy for high-speed, high-power applications Mar. 7, 2006
7005359 Bipolar junction transistor with improved extrinsic base region and method of fabrication Feb. 28, 2006
7002221 Bipolar transistor having raised extrinsic base with selectable self-alignment and methods of forming same Feb. 21, 2006
7001806 Semiconductor structure with increased breakdown voltage and method for producing the semiconductor structure Feb. 21, 2006
6984872 Method for fabricating an NPN transistor in a BICMOS technology Jan. 10, 2006

1 2 3 4 5 6

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