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Class Information
Number: 257/E29.18
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Bipolar device (epo) > Transistor-type device (i.e., able to continuously respond to applied control signal) > Bipolar junction transistor > Avalanche transistors (epo)
Description: This subclass is indented under subclass E29.174. This subclass is substantially the same in scope as ECLA classification H01L29/73F.










Patents under this class:

Patent Number Title Of Patent Date Issued
8384194 Power semiconductor device comprising a plurality of trench IGBTs Feb. 26, 2013
7910953 Optical semiconductor device Mar. 22, 2011
7843030 Method, apparatus, material, and system of using a high gain avalanche photodetector transistor Nov. 30, 2010
7638857 Structure of silicon controlled rectifier Dec. 29, 2009
7557013 Methods of forming a plurality of capacitors Jul. 7, 2009
7511357 Trenched MOSFETs with improved gate-drain (GD) clamp diodes Mar. 31, 2009
7345325 Avalanche photodiode Mar. 18, 2008
7214987 Semiconductor device having two different operation modes employing an asymmetrical buried insulating layer and method for fabricating the same May. 8, 2007
5036372 Heterojunction avalanche transistor Jul. 30, 1991
4041515 Avalanche transistor operating above breakdown Aug. 9, 1977
3979769 Gate modulated bipolar transistor Sep. 7, 1976











 
 
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