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Class Information
Number: 257/E29.179
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Bipolar device (epo) > Transistor-type device (i.e., able to continuously respond to applied control signal) > Bipolar junction transistor > Tunnel transistors (epo)
Description: This subclass is indented under subclass E29.174. This subclass is substantially the same in scope as ECLA classification H01L29/73E.










Patents under this class:

Patent Number Title Of Patent Date Issued
8637921 Nitridation oxidation of tunneling layer for improved SONOS speed and retention Jan. 28, 2014
8629478 Fin structure for high mobility multiple-gate transistor Jan. 14, 2014
8614124 SONOS ONO stack scaling Dec. 24, 2013
8576614 Tunnel transistor, logical gate including the transistor, static random-access memory using the logical gate and method for making such a tunnel transistor Nov. 5, 2013
8575674 Ferromagnetic tunnel junction structure, and magneto-resistive element and spintronics device each using same Nov. 5, 2013
8530297 Process for fabricating non-volatile storage Sep. 10, 2013
8399918 Electronic device including a tunnel structure Mar. 19, 2013
7875958 Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures Jan. 25, 2011
7777282 Self-aligned tunneling pocket in field-effect transistors and processes to form same Aug. 17, 2010
7605430 Nonvolatile memory devices having a fin shaped active region and methods of fabricating the same Oct. 20, 2009
7166881 Multi-sensing level MRAM structures Jan. 23, 2007
6756649 High speed electron tunneling device and applications Jun. 29, 2004
6642121 Control of amount and uniformity of oxidation at the interface of an emitter region of a monocrystalline silicon wafer and a polysilicon layer formed by chemical vapor deposition Nov. 4, 2003
6563185 High speed electron tunneling device and applications May. 13, 2003
6395609 Method for fabricating a bipolar junction transistor with tunneling current through the gate of a field effect transistor as base current May. 28, 2002
6320211 Semiconductor device and electronic device by use of the semiconductor Nov. 20, 2001
6246103 Bipolar junction transistor with tunneling current through the gate of a field effect transistor as base current Jun. 12, 2001
5610435 Semiconductor device having an electrode which controls a surface state of the base area for minimizing a change of the D.C. amplification ratio Mar. 11, 1997
5486704 Semiconductor device and electronic device by use of the semiconductor Jan. 23, 1996
5399512 Method of making carrier conduction conductor-insulator semiconductor (CIS) transistor Mar. 21, 1995
5389803 High-gain Si/SiGe MIS heterojunction bipolar transistors Feb. 14, 1995
5382815 Carrier conduction conductor-insulator semiconductor (CIS) transistor Jan. 17, 1995
5272357 Semiconductor device and electronic device by use of the semiconductor Dec. 21, 1993
4975750 Semiconductor device Dec. 4, 1990
4926232 Resonant-tunneling bipolar transistor May. 15, 1990
4849799 Resonant tunneling transistor Jul. 18, 1989











 
 
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