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Class Information
Number: 257/E29.178
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Bipolar device (epo) > Transistor-type device (i.e., able to continuously respond to applied control signal) > Bipolar junction transistor > Schottky transistors (epo)
Description: This subclass is indented under subclass E29.174. This subclass is substantially the same in scope as ECLA classification H01L29/73D.

Patents under this class:

Patent Number Title Of Patent Date Issued
8269262 Vertical junction field effect transistor with mesa termination and method of making the same Sep. 18, 2012
7936040 Schottky barrier quantum well resonant tunneling transistor May. 3, 2011
7723762 Schottky barrier FinFET device and fabrication method thereof May. 25, 2010
7709923 Metal-base nanowire transistor May. 4, 2010
4412376 Fabrication method for vertical PNP structure with Schottky barrier diode emitter utilizing ion implantation Nov. 1, 1983
4220961 Monolithic combination of two complementary bipolar transistors Sep. 2, 1980

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