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Class Information
Number: 257/E29.176
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Bipolar device (epo) > Transistor-type device (i.e., able to continuously respond to applied control signal) > Bipolar junction transistor > Device being resistive element (e.g., ballasting resistor) (epo)
Description: This subclass is indented under subclass E29.174. This subclass is substantially the same in scope as ECLA classification H01L29/73B2.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8692329 Electric resistance element suitable for light-emitting diode, laser diodes, or photodetectors Apr. 8, 2014
8129250 Resistor with improved switchable resistance and non-volatile memory device Mar. 6, 2012
8072001 Heterojunction bipolar transistor and method for manufacturing the same, and power amplifier using the same Dec. 6, 2011
7923783 Semiconductor memory device having resistance element with two conductors Apr. 12, 2011
7804109 Heterojunction bipolar transistor and method for manufacturing the same, and power amplifier using the same Sep. 28, 2010
7714390 Integrated circuit comprising a substrate and a resistor May. 11, 2010
7649229 ESD protection device Jan. 19, 2010
7492011 Semiconductor device and manufacturing method of semiconductor device Feb. 17, 2009
7485905 Electrostatic discharge protection device Feb. 3, 2009
7394110 Planar vertical resistor and bond pad resistor Jul. 1, 2008
6946720 Bipolar transistor for an integrated circuit having variable value emitter ballast resistors Sep. 20, 2005
6768140 Structure and method in an HBT for an emitter ballast resistor with improved characteristics Jul. 27, 2004
6611008 Heterojunction bipolar transistor capable of restraining the conductivity modulation of the ballast layer Aug. 26, 2003
6563194 BJT with surface resistor connection May. 13, 2003
6458668 Method for manufacturing hetero junction bipolar transistor Oct. 1, 2002
6455919 Internally ballasted silicon germanium transistor Sep. 24, 2002
6297118 Vertical bipolar semiconductor power transistor with an interdigitzed geometry, with optimization of the base-to-emitter potential difference Oct. 2, 2001
6281530 LPNP utilizing base ballast resistor Aug. 28, 2001
6130471 Ballasting of high power silicon-germanium heterojunction biploar transistors Oct. 10, 2000
6078095 Power transistor including a plurality of unit transistors Jun. 20, 2000
6069399 Vertical bipolar semiconductor power transistor with an interdigitized geometry, with optimization of the base-to-emitter potential difference May. 30, 2000
6064109 Ballast resistance for producing varied emitter current flow along the emitter's injecting edge May. 16, 2000
6043520 III-V heterojunction bipolar transistor having a GaAs emitter ballast Mar. 28, 2000
6013942 Bipolar transistor structure Jan. 11, 2000
5998855 Bipolar power transistor with buried base and interdigitated geometry Dec. 7, 1999
5990539 Transistor component having an integrated emitter resistor Nov. 23, 1999
5939768 Vertical bipolar power transistor with an integrated sensing circuit Aug. 17, 1999
5907180 Ballast monitoring for radio frequency power transistors May. 25, 1999
5869381 RF power transistor having improved stability and gain Feb. 9, 1999
5821602 RF power transistor having improved stability and gain Oct. 13, 1998
5804867 Thermally balanced radio frequency power transistor Sep. 8, 1998
5760457 Bipolar transistor circuit element having base ballasting resistor Jun. 2, 1998
5684326 Emitter ballast bypass for radio frequency power transistors Nov. 4, 1997
5605851 Method of forming semiconductor device with a buried junction Feb. 25, 1997
5557139 Buried base vertical bipolar power transistor with improved current gain and operation area Sep. 17, 1996
5444292 Integrated thin film approach to achieve high ballast levels for overlay structures Aug. 22, 1995
5408124 Monolithic semiconductor device having a vertical structure with a deep-base and finger-emitter power transistor having a ballast resistance Apr. 18, 1995
5407857 Method for producing a semiconductor device with a doped polysilicon layer by updiffusion Apr. 18, 1995
5378922 HBT with semiconductor ballasting Jan. 3, 1995
5374844 Bipolar transistor structure using ballast resistor Dec. 20, 1994
5321279 Base ballasting Jun. 14, 1994
5298785 Semiconductor device Mar. 29, 1994
5268589 Semiconductor chip having at least one electrical resistor means Dec. 7, 1993
5204735 High-frequency semiconductor device having emitter stabilizing resistor and method of manufacturing the same Apr. 20, 1993
5138418 Transistor structure for testing emitter-base junction Aug. 11, 1992
5073811 Integratable power transistor with optimization of direct secondary breakdown phenomena Dec. 17, 1991
5068703 Electronic circuit device Nov. 26, 1991
5053847 Semiconductor device Oct. 1, 1991
4892839 Method of manufacturing a semiconductor device with polysilicon resistors and field plate Jan. 9, 1990
4886982 Power transistor with improved resistance to direct secondary breakdown Dec. 12, 1989

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