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Class Information
Number: 257/E29.175
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Bipolar device (epo) > Transistor-type device (i.e., able to continuously respond to applied control signal) > Bipolar junction transistor > Structurally associated with other devices (epo)
Description: This subclass is indented under subclass E29.174. This subclass is substantially the same in scope as ECLA classification H01L29/73B.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8610241 Homo-junction diode structures using fin field effect transistor processing Dec. 17, 2013
8552559 Very thick metal interconnection scheme in IC chips Oct. 8, 2013
8193605 Bipolar junction transistor integrated with PIP capacitor and method for making the same Jun. 5, 2012
8030731 Isolated rectifier diode Oct. 4, 2011
7026705 Semiconductor device with surge protection circuit capable of preventing current leakage Apr. 11, 2006
6940357 Bipolar transistor, for voltage controlled oscillator using a capacitance adjustment line Sep. 6, 2005
6897546 Semiconductor device including a functional element having a PN junction May. 24, 2005
6690212 Inductive load driving circuit Feb. 10, 2004
6441446 Device with integrated bipolar and MOSFET transistors in an emitter switching configuration Aug. 27, 2002
6440788 Implant sequence for multi-function semiconductor structure and method Aug. 27, 2002
6441654 Inductive load driving circuit Aug. 27, 2002
6255694 Multi-function semiconductor structure and method Jul. 3, 2001
6181623 Semiconductor MOS/BIPOLAR composite transistor and semiconductor memory device using the same Jan. 30, 2001
6121633 Latch-up free power MOS-bipolar transistor Sep. 19, 2000
5969378 Latch-up free power UMOS-bipolar transistor Oct. 19, 1999
5949128 Bipolar transistor with MOS-controlled protection for reverse-biased emitter-base junction Sep. 7, 1999
5910664 Emitter-switched transistor structures Jun. 8, 1999
5834823 Transistor with constant voltage diode Nov. 10, 1998
5776813 Process to manufacture a vertical gate-enhanced bipolar transistor Jul. 7, 1998
5773338 Bipolar transistor with MOS-controlled protection for reverse-biased emitter-based junction Jun. 30, 1998
5545914 Semiconductor device having zener diodes with temperature stability between base and collector regions Aug. 13, 1996
5488241 Integrated device combining a bipolar transistor and a field effect transistor Jan. 30, 1996
5359220 Hybrid bipolar/field-effect power transistor in group III-V material system Oct. 25, 1994
5225359 Method of fabricating Schottky barrier diodes and Schottky barrier diode-clamped transistors Jul. 6, 1993
5218226 Semiconductor device having high breakdown voltage Jun. 8, 1993
5128742 Variable gain switch Jul. 7, 1992
5109256 Schottky barrier diodes and Schottky barrier diode-clamped transistors and method of fabrication Apr. 28, 1992
5045909 Power switching semiconductor device Sep. 3, 1991
5017503 Process for making a bipolar transistor including selective oxidation May. 21, 1991
5014102 MOSFET-gated bipolar transistors and thyristors with both turn-on and turn-off capability having single-polarity gate input signal May. 7, 1991
5010383 Power transistor device and method for making the same Apr. 23, 1991
4994883 Field controlled diode (FCD) having MOS trench gates Feb. 19, 1991
4987469 Lateral high-voltage transistor suitable for use in emitter followers Jan. 22, 1991
4979008 Vertical isolated-collector transistor of the pnp type incorporating a device for suppressing the effects of parasitic junction components Dec. 18, 1990
4969027 Power bipolar transistor device with integral antisaturation diode Nov. 6, 1990
4967243 Power transistor structure with high speed integral antiparallel Schottky diode Oct. 30, 1990
4965872 MOS-enhanced, self-aligned lateral bipolar transistor made of a semiconductor on an insulator Oct. 23, 1990
4961100 Bidirectional field effect semiconductor device and circuit Oct. 2, 1990
4935799 Composite semiconductor device Jun. 19, 1990
4922315 Control gate lateral silicon-on-insulator bipolar transistor May. 1, 1990
4916505 Composite unipolar-bipolar semiconductor devices Apr. 10, 1990
4912541 Monolithically integrated bidirectional lateral semiconductor device with insulated gate control in both directions and method of fabrication Mar. 27, 1990
4905070 Semiconductor device exhibiting no degradation of low current gain Feb. 27, 1990
4901120 Structure for fast-recovery bipolar devices Feb. 13, 1990
4888627 Monolithically integrated lateral insulated gate semiconductor device Dec. 19, 1989
4885623 Distributed channel-bipolar device Dec. 5, 1989
4881119 Semiconductor devices Nov. 14, 1989
4868624 Channel collector transistor Sep. 19, 1989
4868631 Bipolar transistor with shallow junctions and capable of high packing density Sep. 19, 1989
4868620 High-voltage pull-up device Sep. 19, 1989

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