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Class Information
Number: 257/E29.173
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Bipolar device (epo) > Transistor-type device (i.e., able to continuously respond to applied control signal)
Description: This subclass is indented under subclass E29.171. This subclass is substantially the same in scope as ECLA classification H01L29/72.










Sub-classes under this class:

Class Number Class Name Patents
257/E29.174 Bipolar junction transistor 141
257/E29.194 Controlled by field effect (e.g., bipolar static induction transistor (bsit)) (epo) 85


Patents under this class:

Patent Number Title Of Patent Date Issued
8679969 System for self-aligned contacts Mar. 25, 2014
8093591 Semiconductor device and manufacturing method thereof Jan. 10, 2012
7745856 Lipid nanotube or nanowire sensor Jun. 29, 2010
7667294 Lateral bipolar transistor Feb. 23, 2010
7544978 Lipid nanotube or nanowire sensor Jun. 9, 2009
7081662 ESD protection device for high voltage Jul. 25, 2006
6300660 Bipolar transistor that can be fabricated in CMOS Oct. 9, 2001
5422496 Interband single-electron tunnel transistor and integrated circuit Jun. 6, 1995
5258625 Interband single-electron tunnel transistor and integrated circuit Nov. 2, 1993
5061645 Method of manufacturing a bipolar transistor Oct. 29, 1991
5003370 High power frequency semiconductor device with improved thermal resistance Mar. 26, 1991
4998155 Radiation-hardened semiconductor device with surface layer Mar. 5, 1991
4969019 Three-terminal tunnel device Nov. 6, 1990
4897704 Lateral bipolar transistor with polycrystalline lead regions Jan. 30, 1990
4875085 Semiconductor device with shallow n-type region with arsenic or antimony and phosphorus Oct. 17, 1989
4860082 Bipolar transistor Aug. 22, 1989
4827322 Power transistor May. 2, 1989
4825281 Bipolar transistor with sidewall bare contact structure Apr. 25, 1989
4819055 Semiconductor device having a PN junction formed on an insulator film Apr. 4, 1989
4782378 Transistor having integrated stabilizing resistor and method of making thereof Nov. 1, 1988
4714842 Integrated injection logic circuits Dec. 22, 1987
4695328 Method of making a bipolar transistor Sep. 22, 1987
4639757 Power transistor structure having an emitter ballast resistance Jan. 27, 1987
4629520 Method of forming shallow n-type region with arsenic or antimony and phosphorus Dec. 16, 1986
4591398 Method for manufacturing a semiconductor device utilizing self-aligned oxide-nitride masking May. 27, 1986
4590666 Method for producing a bipolar transistor having a reduced base region May. 27, 1986
4587656 High voltage solid-state switch May. 6, 1986
4585962 Semiconductor switching device utilizing bipolar and MOS elements Apr. 29, 1986
4584055 Method for manufacturing a semiconductor device Apr. 22, 1986
4577397 Method for manufacturing a semiconductor device having vertical and lateral transistors Mar. 25, 1986
4525922 Method of producing a semiconductor device Jul. 2, 1985
4469535 Method of fabricating semiconductor integrated circuit devices Sep. 4, 1984
4460417 Method of manufacturing insulating film and electric device utilizing the same Jul. 17, 1984
4456920 Semiconductor device Jun. 26, 1984
4415384 Method for manufacturing a semiconductive device Nov. 15, 1983
4412378 Method for manufacturing semiconductor device utilizing selective masking, etching and oxidation Nov. 1, 1983
4408387 Method for producing a bipolar transistor utilizing an oxidized semiconductor masking layer in conjunction with an anti-oxidation mask Oct. 11, 1983
4407059 Method of producing semiconductor device Oct. 4, 1983
4398962 Method of controlling base contact regions by forming a blocking layer contiguous to a doped poly-si emitter source Aug. 16, 1983
4377421 Method of making a stacked emitter in a bipolar transistor by selective laser irradiation Mar. 22, 1983
4377031 Method of making Schottky barrier diode by selective beam-crystallized polycrystalline/amorphous layer Mar. 22, 1983
4370670 Transistor with plural parallel units Jan. 25, 1983
4364010 Semiconductor device with monitor pattern, and a method of monitoring device parameters Dec. 14, 1982
4339765 Transistor device Jul. 13, 1982
4302763 Semiconductor device Nov. 24, 1981
4286177 Integrated injection logic circuits Aug. 25, 1981
4078208 Linear amplifier circuit with integrated current injector Mar. 7, 1978
4056810 Integrated injection logic memory circuit Nov. 1, 1977











 
 
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