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Class Information
Number: 257/E29.173
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Bipolar device (epo) > Transistor-type device (i.e., able to continuously respond to applied control signal)
Description: This subclass is indented under subclass E29.171. This subclass is substantially the same in scope as ECLA classification H01L29/72.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7081662 |
ESD protection device for high voltage |
Jul. 25, 2006 |
| 6300660 |
Bipolar transistor that can be fabricated in CMOS |
Oct. 9, 2001 |
| 5422496 |
Interband single-electron tunnel transistor and integrated circuit |
Jun. 6, 1995 |
| 5258625 |
Interband single-electron tunnel transistor and integrated circuit |
Nov. 2, 1993 |
| 5061645 |
Method of manufacturing a bipolar transistor |
Oct. 29, 1991 |
| 5003370 |
High power frequency semiconductor device with improved thermal resistance |
Mar. 26, 1991 |
| 4998155 |
Radiation-hardened semiconductor device with surface layer |
Mar. 5, 1991 |
| 4969019 |
Three-terminal tunnel device |
Nov. 6, 1990 |
| 4897704 |
Lateral bipolar transistor with polycrystalline lead regions |
Jan. 30, 1990 |
| 4875085 |
Semiconductor device with shallow n-type region with arsenic or antimony and phosphorus |
Oct. 17, 1989 |
| 4860082 |
Bipolar transistor |
Aug. 22, 1989 |
| 4827322 |
Power transistor |
May. 2, 1989 |
| 4825281 |
Bipolar transistor with sidewall bare contact structure |
Apr. 25, 1989 |
| 4819055 |
Semiconductor device having a PN junction formed on an insulator film |
Apr. 4, 1989 |
| 4782378 |
Transistor having integrated stabilizing resistor and method of making thereof |
Nov. 1, 1988 |
| 4714842 |
Integrated injection logic circuits |
Dec. 22, 1987 |
| 4695328 |
Method of making a bipolar transistor |
Sep. 22, 1987 |
| 4639757 |
Power transistor structure having an emitter ballast resistance |
Jan. 27, 1987 |
| 4629520 |
Method of forming shallow n-type region with arsenic or antimony and phosphorus |
Dec. 16, 1986 |
| 4591398 |
Method for manufacturing a semiconductor device utilizing self-aligned oxide-nitride masking |
May. 27, 1986 |
| 4590666 |
Method for producing a bipolar transistor having a reduced base region |
May. 27, 1986 |
| 4587656 |
High voltage solid-state switch |
May. 6, 1986 |
| 4585962 |
Semiconductor switching device utilizing bipolar and MOS elements |
Apr. 29, 1986 |
| 4584055 |
Method for manufacturing a semiconductor device |
Apr. 22, 1986 |
| 4577397 |
Method for manufacturing a semiconductor device having vertical and lateral transistors |
Mar. 25, 1986 |
| 4525922 |
Method of producing a semiconductor device |
Jul. 2, 1985 |
| 4469535 |
Method of fabricating semiconductor integrated circuit devices |
Sep. 4, 1984 |
| 4460417 |
Method of manufacturing insulating film and electric device utilizing the same |
Jul. 17, 1984 |
| 4456920 |
Semiconductor device |
Jun. 26, 1984 |
| 4415384 |
Method for manufacturing a semiconductive device |
Nov. 15, 1983 |
| 4412378 |
Method for manufacturing semiconductor device utilizing selective masking, etching and oxidation |
Nov. 1, 1983 |
| 4408387 |
Method for producing a bipolar transistor utilizing an oxidized semiconductor masking layer in conjunction with an anti-oxidation mask |
Oct. 11, 1983 |
| 4407059 |
Method of producing semiconductor device |
Oct. 4, 1983 |
| 4398962 |
Method of controlling base contact regions by forming a blocking layer contiguous to a doped poly-si emitter source |
Aug. 16, 1983 |
| 4377421 |
Method of making a stacked emitter in a bipolar transistor by selective laser irradiation |
Mar. 22, 1983 |
| 4377031 |
Method of making Schottky barrier diode by selective beam-crystallized polycrystalline/amorphous layer |
Mar. 22, 1983 |
| 4370670 |
Transistor with plural parallel units |
Jan. 25, 1983 |
| 4364010 |
Semiconductor device with monitor pattern, and a method of monitoring device parameters |
Dec. 14, 1982 |
| 4339765 |
Transistor device |
Jul. 13, 1982 |
| 4302763 |
Semiconductor device |
Nov. 24, 1981 |
| 4286177 |
Integrated injection logic circuits |
Aug. 25, 1981 |
| 4078208 |
Linear amplifier circuit with integrated current injector |
Mar. 7, 1978 |
| 4056810 |
Integrated injection logic memory circuit |
Nov. 1, 1977 |
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