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Class Information
Number: 257/E29.171
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Bipolar device (epo)
Description: This subclass is indented under subclass E29.169. This subclass is substantially the same in scope as ECLA classification H01L29/70.

Sub-classes under this class:

Class Number Class Name Patents
257/E29.172 Double-base diode (epo) 5
257/E29.211 Thyristor-type device (e.g., having four-zone regenerative action) (epo) 157
257/E29.173 Transistor-type device (i.e., able to continuously respond to applied control signal) 48

Patents under this class:

Patent Number Title Of Patent Date Issued
8652919 Tunable semiconductor device Feb. 18, 2014
8610174 Bipolar transistor with a raised collector pedestal for reduced capacitance Dec. 17, 2013
8564098 Controlling the recombination rate in a bipolar semiconductor component Oct. 22, 2013
8421185 Parasitic vertical PNP bipolar transistor in BiCMOS process Apr. 16, 2013
8384154 Bidirectional power switch controllable to be turned on and off Feb. 26, 2013
8304814 Power semiconductor device Nov. 6, 2012
8269313 Bipolar transistor including conductive first and second protection layers Sep. 18, 2012
8178947 Semiconductor device May. 15, 2012
8159048 Bipolar junction transistor geometry Apr. 17, 2012
8129248 Method of producing bipolar transistor structures in a semiconductor process Mar. 6, 2012
7977708 HBT/FET process integration Jul. 12, 2011
7755168 Semiconductor device provided with floating electrode Jul. 13, 2010
7705427 Integrated circuit comprising a gradually doped bipolar transistor Apr. 27, 2010
7687886 High on-state breakdown heterojunction bipolar transistor Mar. 30, 2010
7656002 Integrated bipolar transistor and field effect transistor Feb. 2, 2010
7622788 GaN heterojunction bipolar transistor with a p-type strained InGaN base layer Nov. 24, 2009
7576406 Semiconductor device Aug. 18, 2009
7482673 Structure and method for bipolar transistor having non-uniform collector-base junction Jan. 27, 2009
7247926 High-frequency switching transistor Jul. 24, 2007
7199447 Angled implant to improve high current operation of bipolar transistors Apr. 3, 2007
5952683 Functional semiconductor element with avalanche multiplication Sep. 14, 1999
4547743 Variable resistance gain control integrated circuit Oct. 15, 1985
4182965 Semiconductor device having two intersecting sub-diodes and transistor-like properties Jan. 8, 1980

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