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Class Information
Number: 257/E29.17
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Memory effect devices (epo)
Description: This subclass is indented under subclass E29.169. This subclass is substantially the same in scope as ECLA classification H01L29/68E.










Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8703555 Defect prevention on SRAM cells that incorporate selective epitaxial regions Apr. 22, 2014
8648409 Non-volatile memory device and method for fabricating the same Feb. 11, 2014
8623736 Memory devices with enhanced isolation of memory cells, systems including same and methods of forming same Jan. 7, 2014
8618603 Nonvolatile semiconductor memory device and method for manufacturing same Dec. 31, 2013
8575586 Resistive memory device and method for manufacturing the same Nov. 5, 2013
8530939 Cross-point memory structures Sep. 10, 2013
8519488 III-V metal-oxide-semiconductor device Aug. 27, 2013
8497538 MRAM synthetic antiferromagnet structure Jul. 30, 2013
8476708 Semiconductor memory device having a circuit formed on a single crystal semiconductor layer with varied germanium concentration Jul. 2, 2013
8426904 Semiconductor device Apr. 23, 2013
8384138 Defect prevention on SRAM cells that incorporate selective epitaxial regions Feb. 26, 2013
8354708 Methods of forming and operating semiconductor device Jan. 15, 2013
8350247 Resistive random access memory having a solid solution layer and method of manufacturing the same Jan. 8, 2013
8344351 Phase change memory device with plated phase change material Jan. 1, 2013
8299450 Non-volatile memory device including phase-change material Oct. 30, 2012
8294134 Phase change memory devices having a current increase unit Oct. 23, 2012
8294196 Erasable non-volatile memory device using hole trapping in high-K dielectrics Oct. 23, 2012
8222630 Organic memory device having memory active region formed by embossing structure Jul. 17, 2012
8222094 Method for manufacturing an EEPROM cell Jul. 17, 2012
8207557 Cross-point memory structures Jun. 26, 2012
8198129 Methods of depositing antimony-comprising phase change material onto a substrate and methods of forming phase change memory circuitry Jun. 12, 2012
8183622 Flash memory device comprising bit-line contact region with dummy layer between adjacent contact holes May. 22, 2012
8134200 Nonvolatile semiconductor memory including a gate insulating film and an inter-gate insulating film Mar. 13, 2012
8124956 Phase change memory devices Feb. 28, 2012
8125021 Non-volatile memory devices including variable resistance material Feb. 28, 2012
8115247 Non-volatile semiconductor memory device having an erasing gate Feb. 14, 2012
8106394 Multi-layer storage node, resistive random access memory device including a multi-layer storage node and methods of manufacturing the same Jan. 31, 2012
8093680 Metal-insulator-metal-insulator-metal (MIMIM) memory device Jan. 10, 2012
8072024 Nonvolatile semiconductor memory device and method for manufacturing same Dec. 6, 2011
8053817 Vertical transistor and method for forming the same Nov. 8, 2011
8044442 Metal-insulator-metal (MIM) switching devices Oct. 25, 2011
8030643 Memory device and manufacturing method the same Oct. 4, 2011
8030637 Memory element using reversible switching between SP2 and SP3 hybridized carbon Oct. 4, 2011
8021897 Methods of fabricating a cross point memory array Sep. 20, 2011
8017986 Semiconductor device Sep. 13, 2011
8008213 Self-assembly process for memory array Aug. 30, 2011
8009454 Resistance random access memory device and a method of manufacturing the same Aug. 30, 2011
7995369 Semiconductor memory device Aug. 9, 2011
7989268 Small form factor molded memory card and a method thereof Aug. 2, 2011
7982244 Semiconductor memory device and manufacturing method thereof Jul. 19, 2011
7977662 Phase-changeable memory devices having reduced susceptibility to thermal interference Jul. 12, 2011
7964437 Memory device having wide area phase change element and small electrode contact area Jun. 21, 2011
7960719 Semiconductor device Jun. 14, 2011
7943920 Resistive memory structure with buffer layer May. 17, 2011
7943917 Non-volatile memory cell and fabrication method thereof May. 17, 2011
7939398 Method to manufacture silicon quantum islands and single-electron devices May. 10, 2011
7932543 Wire structure and semiconductor device comprising the wire structure Apr. 26, 2011
7928501 Semiconductor device and methods of forming and operating the same Apr. 19, 2011
7928500 Semiconductor device Apr. 19, 2011
7928421 Phase change memory cell with vacuum spacer Apr. 19, 2011

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