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Class Information
Number: 257/E29.164
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrodes (epo) > Of specified material (epo) > Electrodes for igfet (epo) > Insulating materials for igfet (epo) > With at least one ferroelectric layer (epo)
Description: This subclass is indented under subclass E29.162. This subclass is substantially the same in scope as ECLA classification H01L29/51F.

Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
8664704 Electronic component with reactive barrier and hermetic passivation layer Mar. 4, 2014
8648401 Domain wall assisted spin torque transfer magnetresistive random access memory structure Feb. 11, 2014
8569170 Manufacturing method of semiconductor device comprising silicide layer with varied thickness Oct. 29, 2013
8461637 Electronic component with reactive barrier and hermetic passivation layer Jun. 11, 2013
8405134 Magnetic tunnel junction device Mar. 26, 2013
8399941 Magnetic junction elements having an easy cone anisotropy and a magnetic memory using such magnetic junction elements Mar. 19, 2013
8389970 Diode and storage layer semiconductor memory device Mar. 5, 2013
8319263 Magnetic tunnel junction device Nov. 27, 2012
8264023 Semiconductor device and manufacturing method of semiconductor device Sep. 11, 2012
8247855 Enhanced local interconnects employing ferroelectric electrodes Aug. 21, 2012
8198660 Multi-bit STRAM memory cells Jun. 12, 2012
8076705 Capacitor device providing sufficient reliability Dec. 13, 2011
8035146 Nonvolatile ferroelectric memory device Oct. 11, 2011
8022454 Ferroelectric thin films Sep. 20, 2011
7989877 Semiconductor devices including a dielectric layer Aug. 2, 2011
7973350 Strained-channel transistor device Jul. 5, 2011
7973321 Nitride semiconductor light emitting device having ridge parts Jul. 5, 2011
7923262 Method of manufacturing patterned ferroelectric media Apr. 12, 2011
7910967 Ferroelectric capacitor having three-dimensional structure, nonvolatile memory device having the same and method of fabricating the same Mar. 22, 2011
7893473 Semiconductor memory device and method of fabricating the same Feb. 22, 2011
7892917 Method for forming bismuth titanium silicon oxide thin film Feb. 22, 2011
7884403 Magnetic tunnel junction device and memory device including the same Feb. 8, 2011
7834385 Multi-bit STRAM memory cells Nov. 16, 2010
7821081 Method and apparatus for flatband voltage tuning of high-k field effect transistors Oct. 26, 2010
7816727 High-.kappa. capped blocking dielectric bandgap engineered SONOS and MONOS Oct. 19, 2010
7816150 Fabrication process of semiconductor device Oct. 19, 2010
7781816 Nonvolatile magnetic memory device and photomask Aug. 24, 2010
7781813 Ferroelectric memory device and method for manufacturing ferroelectric memory device Aug. 24, 2010
7776622 Method for fabricating semiconductor devices Aug. 17, 2010
7772630 Magnetic switching element of a magnetic memory cell having a ferromagnetic layer formed between a gate insulating film and a magnetic semiconductor layer Aug. 10, 2010
7768050 Ferroelectric thin films Aug. 3, 2010
7732223 Magnetic memory device and method for manufacturing the same Jun. 8, 2010
7659562 Electric field read/write head and method of manufacturing same and data read/write device Feb. 9, 2010
7655517 Spin polarization amplifying transistor Feb. 2, 2010
7645617 Nonvolatile ferroelectric memory device using silicon substrate, method for manufacturing the same, and refresh method thereof Jan. 12, 2010
7635885 Semiconductor device and manufacturing method of the same Dec. 22, 2009
7611913 Ferroelectric rare-earth manganese-titanium oxides Nov. 3, 2009
7598556 Ferroelectric memory device Oct. 6, 2009
7566938 Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structures Jul. 28, 2009
7545013 Reconfigurable logic circuit using a transistor having spin-dependent transfer characteristics Jun. 9, 2009
7535745 Ferroelectric memory device and method of manufacturing the same May. 19, 2009
7479696 Integrated BST microwave tunable devices fabricated on SOI substrate Jan. 20, 2009
7436013 Ferroelectric memory device Oct. 14, 2008
7382013 Dielectric thin film, dielectric thin film device, and method of production thereof Jun. 3, 2008
7285810 Ferroelectric memory devices having expanded plate lines Oct. 23, 2007
7276758 Non-volatile memory having three states and method for manufacturing the same Oct. 2, 2007
7220601 Method of forming nano-sized MTJ cell without contact hole May. 22, 2007
7214977 Ferroelectric thin film, method of manufacturing the same, ferroelectric memory device and ferroelectric piezoelectric device May. 8, 2007
7211851 Ferroelectric memory May. 1, 2007
7211852 Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate May. 1, 2007

1 2 3 4

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