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Class Information
Number: 257/E29.162
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrodes (epo) > Of specified material (epo) > Electrodes for igfet (epo) > Insulating materials for igfet (epo)
Description: This subclass is indented under subclass E29.15. This subclass is substantially the same in scope as ECLA classification H01L29/51.










Sub-classes under this class:

Class Number Class Name Patents
257/E29.165 Multiple layers (epo) 715
257/E29.164 With at least one ferroelectric layer (epo) 160


Patents under this class:
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

Patent Number Title Of Patent Date Issued
8563411 Semiconductor devices having a diffusion barrier layer and methods of manufacturing the same Oct. 22, 2013
8513650 Dielectric layer for an electronic device Aug. 20, 2013
8450813 Fin transistor structure and method of fabricating the same May. 28, 2013
8445952 Zr-Sn-Ti-O films May. 21, 2013
8445973 Fin transistor structure and method of fabricating the same May. 21, 2013
8178934 Dielectric film with hafnium aluminum oxynitride film May. 15, 2012
7989877 Semiconductor devices including a dielectric layer Aug. 2, 2011
7968956 Semiconductor device Jun. 28, 2011
7902588 Nonvolatile semiconductor memory device and method for manufacturing the same Mar. 8, 2011
7876610 Memory cell array with specific placement of field stoppers Jan. 25, 2011
7872316 Semiconductor device and method of manufacturing semiconductor device Jan. 18, 2011
7829978 Closed loop CESL high performance CMOS device Nov. 9, 2010
7816727 High-.kappa. capped blocking dielectric bandgap engineered SONOS and MONOS Oct. 19, 2010
7808020 Self-assembled sidewall spacer Oct. 5, 2010
7804146 Semiconductor device and method for fabricating the same Sep. 28, 2010
7790535 Depletion-free MOS using atomic-layer doping Sep. 7, 2010
7755128 Semiconductor device containing crystallographically stabilized doped hafnium zirconium based materials Jul. 13, 2010
7719065 Ruthenium layer for a dielectric layer containing a lanthanide oxide May. 18, 2010
7586163 Semiconductor device having an electrode containing boron and manufacturing method thereof Sep. 8, 2009
7575995 Method of forming fine metal pattern and method of forming metal line using the same Aug. 18, 2009
7525144 Insulating film and semiconductor device Apr. 28, 2009
7453106 Semiconductor device with stress reducing trench fill containing semiconductor microparticles in shallow trench isolation Nov. 18, 2008
7405453 Incorporation of nitrogen into high k dielectric film Jul. 29, 2008
7385265 High dielectric constant MOSFET device Jun. 10, 2008
7326980 Devices with HfSiON dielectric films which are Hf-O rich Feb. 5, 2008
7276747 Semiconductor device having screening electrode and method Oct. 2, 2007
7214993 Non-planar transistor having germanium channel region and method of manufacturing the same May. 8, 2007
7071067 Fabrication of integrated devices using nitrogen implantation Jul. 4, 2006
7067422 Method of forming a tantalum-containing gate electrode structure Jun. 27, 2006
7067889 Method for manufacturing semiconductor integrated circuit device Jun. 27, 2006
7068544 Flash memory with low tunnel barrier interpoly insulators Jun. 27, 2006
7064058 Low-temperature growth high-quality ultra-thin praseodymium gate dieletrics Jun. 20, 2006
7064346 Transistor and semiconductor device Jun. 20, 2006
7064400 Semiconductor device and process for producing the same Jun. 20, 2006
7060524 Methods of testing/stressing a charge trapping device Jun. 13, 2006
7060600 Semiconductor capacitor and MOSFET fitted therewith Jun. 13, 2006
7057244 Dielectric materials Jun. 6, 2006
7053455 Semiconductor device and method of manufacturing semiconductor device May. 30, 2006
7052953 Dielectric material forming methods and enhanced dielectric materials May. 30, 2006
7045430 Atomic layer-deposited LaAlO3 films for gate dielectrics May. 16, 2006
7045847 Semiconductor device with high-k gate dielectric May. 16, 2006
7041585 Process for producing an integrated electronic component May. 9, 2006
7041552 Integrated metal-insulator-metal capacitor and metal gate transistor May. 9, 2006
7042043 Programmable array logic or memory devices with asymmetrical tunnel barriers May. 9, 2006
7037862 Dielectric layer forming method and devices formed therewith May. 2, 2006
7033889 Trenched semiconductor devices and their manufacture Apr. 25, 2006
7033958 Semiconductor device and process for producing the same Apr. 25, 2006
7030448 Mask ROM and the method of forming the same and the scheme of reading the device Apr. 18, 2006
7029605 Low dielectric constant material having thermal resistance, insulation film between semiconductor layers using the same, and semiconductor device Apr. 18, 2006
7030000 Method for fabricating a metallic oxide of high dielectric constant, metallic oxide of high dielectric constant, gate insulating film and semiconductor element Apr. 18, 2006

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