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Class Information
Number: 257/E29.161
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrodes (epo) > Of specified material (epo) > Electrodes for igfet (epo) > Gate conductor material being compound or alloy material (e.g., organic material, tin, mosi 2 ) (epo) > Silicide (epo)
Description: This subclass is indented under subclass E29.16. This subclass is substantially the same in scope as ECLA classification H01L29/49E2.










Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
6873030 Metal gate electrode using silicidation and method of formation thereof Mar. 29, 2005
6872639 Fabrication of semiconductor devices with transition metal boride films as diffusion barriers Mar. 29, 2005
6831343 Metal gate engineering for surface p-channel devices Dec. 14, 2004
6797641 Gate oxide stabilization by means of germanium components in gate conductor Sep. 28, 2004
6784033 Method for the manufacture of an insulated gate field effect semiconductor device Aug. 31, 2004
6723658 Gate structure and method Apr. 20, 2004
6713335 Method of self-aligning a damascene gate structure to isolation regions Mar. 30, 2004
6664154 Method of using amorphous carbon film as a sacrificial layer in replacement gate integration processes Dec. 16, 2003
6653700 Transistor structure and method of fabrication Nov. 25, 2003
6645798 Metal gate engineering for surface p-channel devices Nov. 11, 2003
6632731 Structure and method of making a sub-micron MOS transistor Oct. 14, 2003
6614082 Fabrication of semiconductor devices with transition metal boride films as diffusion barriers Sep. 2, 2003
6613654 Fabrication of semiconductor devices with transition metal boride films as diffusion barriers Sep. 2, 2003
6602781 Metal silicide gate transistors Aug. 5, 2003
6599831 Metal gate electrode using silicidation and method of formation thereof Jul. 29, 2003
6590241 MOS transistors with improved gate dielectrics Jul. 8, 2003
6559051 Electroless deposition of dielectric precursor materials for use in in-laid gate MOS transistors May. 6, 2003
6555453 Fully nickel silicided metal gate with shallow junction formed Apr. 29, 2003
6518154 Method of forming semiconductor devices with differently composed metal-based gate electrodes Feb. 11, 2003
6489648 Semiconductor device Dec. 3, 2002
6468845 Semiconductor apparatus having conductive thin films and manufacturing apparatus therefor Oct. 22, 2002
6441464 Gate oxide stabilization by means of germanium components in gate conductor Aug. 27, 2002
6417565 Semiconductor device and method for producing same Jul. 9, 2002
6372563 Self-aligned SOI device with body contact and NiSi2 gate Apr. 16, 2002
6346731 Semiconductor apparatus having conductive thin films Feb. 12, 2002
6342414 Damascene NiSi metal gate high-k transistor Jan. 29, 2002
6339246 Tungsten silicide nitride as an electrode for tantalum pentoxide devices Jan. 15, 2002
6284636 Tungsten gate method and apparatus Sep. 4, 2001
6274421 Method of making metal gate sub-micron MOS transistor Aug. 14, 2001
6265749 Metal silicide transistor gate spaced from a semiconductor substrate by a ceramic gate dielectric having a high dielectric constant Jul. 24, 2001
6239452 Self-aligned silicide gate technology for advanced deep submicron MOS device May. 29, 2001
6228724 Method of making high performance MOSFET with enhanced gate oxide integration and device formed thereby May. 8, 2001
6211000 Method of making high performance mosfets having high conductivity gate conductors Apr. 3, 2001
6118140 Semiconductor apparatus having conductive thin films Sep. 12, 2000
6103607 Manufacture of MOSFET devices Aug. 15, 2000
6091123 Self-aligned SOI device with body contact and NiSi.sub.2 gate Jul. 18, 2000
6078089 Semiconductor device having cobalt niobate-metal silicide electrode structure and process of fabrication thereof Jun. 20, 2000
6060406 MOS transistors with improved gate dielectrics May. 9, 2000
6043142 Semiconductor apparatus having conductive thin films and manufacturing apparatus therefor Mar. 28, 2000
6011289 Metal oxide stack for flash memory application Jan. 4, 2000
5960270 Method for forming an MOS transistor having a metallic gate electrode that is formed after the formation of self-aligned source and drain regions Sep. 28, 1999
5943596 Fabrication of a gate electrode stack using a patterned oxide layer Aug. 24, 1999
5939758 Semiconductor device with gate electrodes having conductive films Aug. 17, 1999
5937315 Self-aligned silicide gate technology for advanced submicron MOS devices Aug. 10, 1999
5930632 Process of fabricating a semiconductor device having cobalt niobate gate electrode structure Jul. 27, 1999
5907789 Method of forming a contact-hole of a semiconductor element May. 25, 1999
5907784 Method of making multi-layer gate structure with different stoichiometry silicide layers May. 25, 1999
5903053 Semiconductor device May. 11, 1999
5821623 Multi-layer gate structure Oct. 13, 1998
5801444 Multilevel electronic structures containing copper layer and copper-semiconductor layers Sep. 1, 1998

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