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Class Information
Number: 257/E29.161
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrodes (epo) > Of specified material (epo) > Electrodes for igfet (epo) > Gate conductor material being compound or alloy material (e.g., organic material, tin, mosi 2 ) (epo) > Silicide (epo)
Description: This subclass is indented under subclass E29.16. This subclass is substantially the same in scope as ECLA classification H01L29/49E2.










Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8569170 Manufacturing method of semiconductor device comprising silicide layer with varied thickness Oct. 29, 2013
8513765 Formation method and structure for a well-controlled metallic source/drain semiconductor device Aug. 20, 2013
8435889 Methods of forming CoSi.sub.2, methods of forming field effect transistors, and methods of forming conductive contacts May. 7, 2013
8330234 Semiconductor device and manufacturing process therefor Dec. 11, 2012
8252676 Method for containing a silicided gate within a sidewall spacer in integrated circuit technology Aug. 28, 2012
8242567 Semiconductor device and manufacturing method thereof Aug. 14, 2012
8242599 Electronic component with diffusion barrier layer Aug. 14, 2012
8093647 Nonvolatile semiconductor memory having transistor with a diffusion blocking layer between the lower gate and fully silicided upper gate Jan. 10, 2012
7998881 Method for making high stress boron-doped carbon films Aug. 16, 2011
7973367 Semiconductor device and manufacturing method thereof Jul. 5, 2011
7960283 Method for reducing silicide defects in integrated circuits Jun. 14, 2011
7872316 Semiconductor device and method of manufacturing semiconductor device Jan. 18, 2011
7795124 Methods for contact resistance reduction of advanced CMOS devices Sep. 14, 2010
7759194 Electrically programmable device with embedded EEPROM and method for making thereof Jul. 20, 2010
7750471 Metal and alloy silicides on a single silicon wafer Jul. 6, 2010
7745320 Method for reducing silicide defects in integrated circuits Jun. 29, 2010
7737019 Method for containing a silicided gate within a sidewall spacer in integrated circuit technology Jun. 15, 2010
7732878 MOS devices with continuous contact etch stop layer Jun. 8, 2010
7709903 Contact barrier structure and manufacturing methods May. 4, 2010
7709911 Semiconductor device having silicide transistors and non-silicide transistors formed on the same substrate and method for fabricating the same May. 4, 2010
7679149 Method of removing refractory metal layers and of siliciding contact areas Mar. 16, 2010
7663191 Semiconductor device and manufacturing method thereof with rounded gate including a silicide on the top and at the corners Feb. 16, 2010
7638427 MOS transistor with fully silicided gate Dec. 29, 2009
7622387 Gate electrode silicidation process Nov. 24, 2009
7605077 Dual metal integration scheme based on full silicidation of the gate electrode Oct. 20, 2009
7592674 Semiconductor device with silicide-containing gate electrode and method of fabricating the same Sep. 22, 2009
7541653 Mask ROM devices of semiconductor devices and method of forming the same Jun. 2, 2009
7495298 Insulating buffer film and high dielectric constant semiconductor device and method for fabricating the same Feb. 24, 2009
7495299 Semiconductor device Feb. 24, 2009
7479682 Structure of a field effect transistor having metallic silicide and manufacturing method thereof Jan. 20, 2009
7473975 Fully silicided metal gate semiconductor device structure Jan. 6, 2009
7465996 Semiconductor device and method for fabricating the same Dec. 16, 2008
7396716 Method to obtain fully silicided poly gate Jul. 8, 2008
7368796 Metal gate engineering for surface P-channel devices May. 6, 2008
7327001 PMOS transistor with compressive dielectric capping layer Feb. 5, 2008
7307871 SRAM cell design with high resistor CMOS gate structure for soft error rate improvement Dec. 11, 2007
7294893 Titanium silicide boride gate electrode Nov. 13, 2007
7294890 Fully salicided (FUSA) MOSFET structure Nov. 13, 2007
7279422 Semiconductor device with silicide film and method of manufacturing the same Oct. 9, 2007
7256123 Method of forming an interface for a semiconductor device Aug. 14, 2007
7074655 Gate material for semiconductor device fabrication Jul. 11, 2006
7075158 Semiconductor device and method of manufacturing the same Jul. 11, 2006
7045456 MOS transistor gates with thin lower metal silicide and methods for making the same May. 16, 2006
7019351 Transistor devices, and methods of forming transistor devices and circuit devices Mar. 28, 2006
6992357 Semiconductor device and method of manufacturing the same Jan. 31, 2006
6991972 Gate material for semiconductor device fabrication Jan. 31, 2006
6982467 Semiconductor device and method of manufacturing the same Jan. 3, 2006
6958500 Semiconductor device having low resistivity source and drain electrodes Oct. 25, 2005
6952040 Transistor structure and method of fabrication Oct. 4, 2005
6940118 Semiconductor device with high permittivity gate dielectric film Sep. 6, 2005

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