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Class Information
Number: 257/E29.16
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrodes (epo) > Of specified material (epo) > Electrodes for igfet (epo) > Gate conductor material being compound or alloy material (e.g., organic material, tin, mosi 2 ) (epo)
Description: This subclass is indented under subclass E29.15. This subclass is substantially the same in scope as ECLA classification H01L29/49E.










Sub-classes under this class:

Class Number Class Name Patents
257/E29.161 Silicide (epo) 137


Patents under this class:
1 2 3 4 5 6

Patent Number Title Of Patent Date Issued
8691638 High-K metal gate device Apr. 8, 2014
8669624 Semiconductor device and manufacturing method thereof Mar. 11, 2014
8643121 Semiconductor device and method of manufacturing a semiconductor device Feb. 4, 2014
8592924 Semiconductor device including gate electrode having a laminate structure and a plug electrically connected thereto Nov. 26, 2013
8581353 Multi-layer gate dielectric Nov. 12, 2013
8575709 High-k dielectric gate structures resistant to oxide growth at the dielectric/silicon substrate interface and methods of manufacture thereof Nov. 5, 2013
8558325 Ruthenium for a dielectric containing a lanthanide Oct. 15, 2013
8487382 Device scheme of HKMG gate-last process Jul. 16, 2013
8450813 Fin transistor structure and method of fabricating the same May. 28, 2013
8445973 Fin transistor structure and method of fabricating the same May. 21, 2013
8415753 Semiconductor device and method of manufacturing the same Apr. 9, 2013
8410556 Semiconductor device Apr. 2, 2013
8390042 Gate etch optimization through silicon dopant profile change Mar. 5, 2013
8330234 Semiconductor device and manufacturing process therefor Dec. 11, 2012
8294223 Metal gate structure and method of manufacturing same Oct. 23, 2012
8242599 Electronic component with diffusion barrier layer Aug. 14, 2012
8203189 Semiconductor device including gate electrode having a laminate structure and plug electrically connected thereto Jun. 19, 2012
8193593 Multi-layer gate dielectric Jun. 5, 2012
8193641 Recessed workfunction metal in CMOS transistor gates Jun. 5, 2012
8169040 Semiconductor device and method for manufacturing the same May. 1, 2012
8120114 Transistor having an etch stop layer including a metal compound that is selectively formed over a metal gate Feb. 21, 2012
8115264 Semiconductor device having a metal gate with a low sheet resistance and method of fabricating metal gate of the same Feb. 14, 2012
8089117 Semiconductor structure Jan. 3, 2012
8076735 Semiconductor device with trench of various widths Dec. 13, 2011
8053849 Replacement metal gate transistors with reduced gate oxide leakage Nov. 8, 2011
8039887 Non-volatile semiconductor storage device and method for manufacturing the same Oct. 18, 2011
8003503 Method of integrating stress into a gate stack Aug. 23, 2011
7968956 Semiconductor device Jun. 28, 2011
7919795 Wire structure, method for fabricating wire, thin film transistor substrate, and method for fabricating the thin film transistor substrate Apr. 5, 2011
7880243 Simple low power circuit structure with metal gate and high-k dielectric Feb. 1, 2011
7781849 Semiconductor devices and methods of fabricating the same Aug. 24, 2010
7737019 Method for containing a silicided gate within a sidewall spacer in integrated circuit technology Jun. 15, 2010
7579660 Semiconductor device and manufacturing method thereof Aug. 25, 2009
7485936 Semiconductor device and method of manufacturing the same Feb. 3, 2009
7462915 Method and apparatus for increase strain effect in a transistor channel Dec. 9, 2008
7432164 Semiconductor device comprising a transistor having a counter-doped channel region and method for forming the same Oct. 7, 2008
7429777 Semiconductor device with a gate electrode having a laminate structure Sep. 30, 2008
7400020 Conductive niobium oxide gate MOSFET Jul. 15, 2008
7315067 Native high-voltage n-channel LDMOSFET in standard logic CMOS Jan. 1, 2008
7300887 Methods of forming metal nitride layers, and methods of forming semiconductor structures having metal nitride layers Nov. 27, 2007
7253485 Semiconductor device and manufacturing method thereof Aug. 7, 2007
7202147 Semiconductor device and method for fabricating the same Apr. 10, 2007
7172955 Silicon composition in CMOS gates Feb. 6, 2007
7141858 Dual work function CMOS gate technology based on metal interdiffusion Nov. 28, 2006
7126199 Multilayer metal gate electrode Oct. 24, 2006
7074655 Gate material for semiconductor device fabrication Jul. 11, 2006
7071086 Method of forming a metal gate structure with tuning of work function by silicon incorporation Jul. 4, 2006
7067422 Method of forming a tantalum-containing gate electrode structure Jun. 27, 2006
7064038 Semiconductor device and method for fabricating the same Jun. 20, 2006
7045406 Method of forming an electrode with adjusted work function May. 16, 2006

1 2 3 4 5 6










 
 
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