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Class Information
Number: 257/E29.159
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrodes (epo) > Of specified material (epo) > Electrodes for igfet (epo) > Elemental metal gate conductor material (e.g., w, mo) (epo) > Diverse conductors (epo)
Description: This subclass is indented under subclass E29.158. This subclass is substantially the same in scope as ECLA classification H01L29/49D2.










Patents under this class:

Patent Number Title Of Patent Date Issued
8653605 Work function adjustment in a high-K gate electrode structure after transistor fabrication by using lanthanum Feb. 18, 2014
8643121 Semiconductor device and method of manufacturing a semiconductor device Feb. 4, 2014
8507956 Wire structure, method for fabricating wire, thin film transistor substrate, and method for fabricating the thin film transistor substrate Aug. 13, 2013
8390042 Gate etch optimization through silicon dopant profile change Mar. 5, 2013
8373221 Nanocluster charge storage device Feb. 12, 2013
8362576 Transistor with reduced depletion field width Jan. 29, 2013
8309411 Semiconductor device and method of fabricating the same Nov. 13, 2012
8119508 Forming integrated circuits with replacement metal gate electrodes Feb. 21, 2012
8115264 Semiconductor device having a metal gate with a low sheet resistance and method of fabricating metal gate of the same Feb. 14, 2012
7944005 Semiconductor device and method for fabricating the same May. 17, 2011
7936025 Metalgate electrode for PMOS transistor May. 3, 2011
7919795 Wire structure, method for fabricating wire, thin film transistor substrate, and method for fabricating the thin film transistor substrate Apr. 5, 2011
7446027 Method for forming gate structure with local pulled-back conductive layer and its use Nov. 4, 2008
7361586 Preamorphization to minimize void formation Apr. 22, 2008
7126199 Multilayer metal gate electrode Oct. 24, 2006
7041552 Integrated metal-insulator-metal capacitor and metal gate transistor May. 9, 2006
6974764 Method for making a semiconductor device having a metal gate electrode Dec. 13, 2005
6930361 Semiconductor device realizing characteristics like a SOI MOSFET Aug. 16, 2005
6921711 Method for forming metal replacement gate of high performance Jul. 26, 2005
6893910 One step deposition method for high-k dielectric and metal gate electrode May. 17, 2005
6873048 System and method for integrating multiple metal gates for CMOS applications Mar. 29, 2005
6872627 Selective formation of metal gate for dual gate oxide application Mar. 29, 2005
6861712 MOSFET threshold voltage tuning with metal gate stack control Mar. 1, 2005
6818488 Process for making a gate for a short channel CMOS transistor structure Nov. 16, 2004
6815767 Insulated gate transistor Nov. 9, 2004
6794234 Dual work function CMOS gate technology based on metal interdiffusion Sep. 21, 2004
6787836 Integrated metal-insulator-metal capacitor and metal gate transistor Sep. 7, 2004
6579775 Semiconductor device having a metal gate with a work function compatible with a semiconductor device Jun. 17, 2003
6573149 Semiconductor device having a metal gate with a work function compatible with a semiconductor device Jun. 3, 2003
6537901 Method of manufacturing a transistor in a semiconductor device Mar. 25, 2003
6383879 Semiconductor device having a metal gate with a work function compatible with a semiconductor device May. 7, 2002
6376349 Process for forming a semiconductor device and a conductive structure Apr. 23, 2002
6300208 Methods for annealing an integrated device using a radiant energy absorber layer Oct. 9, 2001
6215149 Trenched gate semiconductor device Apr. 10, 2001
6063692 Oxidation barrier composed of a silicide alloy for a thin film and method of construction May. 16, 2000
5969386 Aluminum gates including ion implanted composite layers Oct. 19, 1999
5960270 Method for forming an MOS transistor having a metallic gate electrode that is formed after the formation of self-aligned source and drain regions Sep. 28, 1999
5796166 Tasin oxygen diffusion barrier in multilayer structures Aug. 18, 1998
5776823 Tasin oxygen diffusion barrier in multilayer structures Jul. 7, 1998
5576579 Tasin oxygen diffusion barrier in multilayer structures Nov. 19, 1996
4160261 MIS Heterojunction structures Jul. 3, 1979
4151537 Gate electrode for MNOS semiconductor memory device Apr. 24, 1979
3999209 Process for radiation hardening of MOS devices and device produced thereby Dec. 21, 1976











 
 
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