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Class Information
Number: 257/E29.158
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrodes (epo) > Of specified material (epo) > Electrodes for igfet (epo) > Elemental metal gate conductor material (e.g., w, mo) (epo)
Description: This subclass is indented under subclass E29.15. This subclass is substantially the same in scope as ECLA classification H01L29/49D.










Sub-classes under this class:

Class Number Class Name Patents
257/E29.159 Diverse conductors (epo) 43


Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
8669618 Manufacturing method for semiconductor device having metal gate Mar. 11, 2014
8653602 Transistor having replacement metal gate and process for fabricating the same Feb. 18, 2014
8643121 Semiconductor device and method of manufacturing a semiconductor device Feb. 4, 2014
8581353 Multi-layer gate dielectric Nov. 12, 2013
8530306 Method of forming a slit recess channel gate Sep. 10, 2013
8432002 Method and structure for low resistive source and drain regions in a replacement metal gate process flow Apr. 30, 2013
8264002 Field-effect transistor Sep. 11, 2012
8211771 Multiple-gate transistors and processes of making same Jul. 3, 2012
8193593 Multi-layer gate dielectric Jun. 5, 2012
8148786 Complementary metal oxide semiconductor integrated circuit using raised source drain and replacement metal gate Apr. 3, 2012
8115264 Semiconductor device having a metal gate with a low sheet resistance and method of fabricating metal gate of the same Feb. 14, 2012
8035173 CMOS transistors with differential oxygen content high-K dielectrics Oct. 11, 2011
8003503 Method of integrating stress into a gate stack Aug. 23, 2011
7977751 Insulated gate field effect transistor and a method of manufacturing the same Jul. 12, 2011
7955917 Fabrication of self-aligned gallium arsenide MOSFETS using damascene gate methods Jun. 7, 2011
7944006 Metal gate electrode stabilization by alloying May. 17, 2011
7919795 Wire structure, method for fabricating wire, thin film transistor substrate, and method for fabricating the thin film transistor substrate Apr. 5, 2011
7898082 Nitrogen rich barrier layers and methods of fabrication thereof Mar. 1, 2011
7892911 Metal gate electrodes for replacement gate integration scheme Feb. 22, 2011
7816707 Field-effect transistor with nitride semiconductor and method for fabricating the same Oct. 19, 2010
7754594 Method for tuning the threshold voltage of a metal gate and high-k device Jul. 13, 2010
7625794 Methods of forming zirconium aluminum oxide Dec. 1, 2009
7579660 Semiconductor device and manufacturing method thereof Aug. 25, 2009
7575995 Method of forming fine metal pattern and method of forming metal line using the same Aug. 18, 2009
7449756 Semiconductor device with a high-k gate dielectric and a metal gate electrode Nov. 11, 2008
7400020 Conductive niobium oxide gate MOSFET Jul. 15, 2008
7358171 Method to chemically remove metal impurities from polycide gate sidewalls Apr. 15, 2008
7164171 Semiconductor device and fabrication method thereof Jan. 16, 2007
7141858 Dual work function CMOS gate technology based on metal interdiffusion Nov. 28, 2006
7126199 Multilayer metal gate electrode Oct. 24, 2006
7091118 Replacement metal gate transistor with metal-rich silicon layer and method for making the same Aug. 15, 2006
7074655 Gate material for semiconductor device fabrication Jul. 11, 2006
7071086 Method of forming a metal gate structure with tuning of work function by silicon incorporation Jul. 4, 2006
7064400 Semiconductor device and process for producing the same Jun. 20, 2006
7041585 Process for producing an integrated electronic component May. 9, 2006
7041552 Integrated metal-insulator-metal capacitor and metal gate transistor May. 9, 2006
7033919 Fabrication of dual work-function metal gate structure for complementary field effect transistors Apr. 25, 2006
7030013 Method for fabricating semiconductor device using high dielectric material Apr. 18, 2006
7022559 MOSFET gate electrodes having performance tuned work functions and methods of making same Apr. 4, 2006
7019351 Transistor devices, and methods of forming transistor devices and circuit devices Mar. 28, 2006
7015152 Method of film deposition, and fabrication of structures Mar. 21, 2006
7005333 Transistor with silicon and carbon layer in the channel region Feb. 28, 2006
6991972 Gate material for semiconductor device fabrication Jan. 31, 2006
6982230 Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structures Jan. 3, 2006
6972225 integrating n-type and P-type metal gate transistors Dec. 6, 2005
6960524 Method for production of a metallic or metal-containing layer Nov. 1, 2005
6958500 Semiconductor device having low resistivity source and drain electrodes Oct. 25, 2005
6953719 Integrating n-type and p-type metal gate transistors Oct. 11, 2005
6952040 Transistor structure and method of fabrication Oct. 4, 2005
6933226 Method of forming a metal gate in a semiconductor device Aug. 23, 2005

1 2 3 4










 
 
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