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Class Information
Number: 257/E29.157
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrodes (epo) > Of specified material (epo) > Electrodes for igfet (epo) > Silicon gate conductor material (epo) > Multiple silicon layers > Including barrier layer between silicon and non-si electrode
Description: This subclass is indented under subclass E29.155. This subclass is substantially the same in scope as ECLA classification H01L29/49C2C.

Patents under this class:
1 2 3 4 5

Patent Number Title Of Patent Date Issued
8535997 Wiring structure, thin film transistor substrate, method for manufacturing thin film transistor substrate, and display device Sep. 17, 2013
8461043 Barrier layer for integrated circuit contacts Jun. 11, 2013
8461683 Self-forming, self-aligned barriers for back-end interconnects and methods of making same Jun. 11, 2013
8435878 Field effect transistor device and fabrication May. 7, 2013
8115264 Semiconductor device having a metal gate with a low sheet resistance and method of fabricating metal gate of the same Feb. 14, 2012
8080453 Gate stack having nitride layer Dec. 20, 2011
7808102 Multi-die DC-DC boost power converter with efficient packaging Oct. 5, 2010
7687389 Method for fabricating semiconductor device Mar. 30, 2010
7632744 Semiconductor integrated circuit device and process for manufacturing the same Dec. 15, 2009
7612421 Electronic device with dopant diffusion barrier and tunable work function and methods of making same Nov. 3, 2009
7563718 Method for forming tungsten layer of semiconductor device and method for forming tungsten wiring layer using the same Jul. 21, 2009
7545009 Word lines for memory cells Jun. 9, 2009
7388290 Spacer patterned, high dielectric constant capacitor and methods for fabricating the same Jun. 17, 2008
7154178 Multilayer diffusion barrier for copper interconnections Dec. 26, 2006
7071049 Silicon rich barrier layers for integrated circuit devices Jul. 4, 2006
7057243 Hybrid semiconductor device having an n+ (p) doped n-type gate and method of producing the same Jun. 6, 2006
7053459 Semiconductor integrated circuit device and process for producing the same May. 30, 2006
7049187 Manufacturing method of polymetal gate electrode May. 23, 2006
7001817 Method for fabricating a semiconductor device Feb. 21, 2006
6987056 Method of forming gates in semiconductor devices Jan. 17, 2006
6977228 Semiconductor device using damascene technique and manufacturing method therefor Dec. 20, 2005
6975007 Semiconductor device including a polysilicon, barrier structure, and tungsten layer electrode Dec. 13, 2005
6939787 Method for fabricating semiconductor device having gate electrode with polymetal structure of polycrystalline silicon film and metal film Sep. 6, 2005
6933580 Semiconductor structure with substantially etched oxynitride defects protruding therefrom Aug. 23, 2005
6930355 Silicided trench gate power mosfets ultrasonically bonded to a surface source electrode Aug. 16, 2005
6930363 Barrier in gate stack for improved gate dielectric integrity Aug. 16, 2005
6927154 Method for fabricating a transistor with a gate structure Aug. 9, 2005
6911381 Boron incorporated diffusion barrier material Jun. 28, 2005
6908803 Methods for forming wordlines, transistor gates, and conductive interconnects, and wordline, transistor gate, and conductive interconnect structures Jun. 21, 2005
6903425 Silicon rich barrier layers for integrated circuit devices Jun. 7, 2005
6900492 Integrated circuit device with P-type gate memory cell having pedestal contact plug and peripheral circuit May. 31, 2005
6893980 Semiconductor device and manufacturing method therefor May. 17, 2005
6890843 Methods of forming semiconductor structures May. 10, 2005
6887774 Conductor layer nitridation May. 3, 2005
6884473 Method for fabricating metal silicide Apr. 26, 2005
6879043 Electrode structure and method for fabricating the same Apr. 12, 2005
6872639 Fabrication of semiconductor devices with transition metal boride films as diffusion barriers Mar. 29, 2005
6872429 Deposition of tungsten nitride using plasma pretreatment in a chemical vapor deposition chamber Mar. 29, 2005
6861356 Method of forming a barrier film and method of forming wiring structure and electrodes of semiconductor device having a barrier film Mar. 1, 2005
6855604 Method for fabricating metal-oxide semiconductor transistor Feb. 15, 2005
6849544 Forming a conductive structure in a semiconductor device Feb. 1, 2005
6841461 Method for forming gate electrode of semiconductor device Jan. 11, 2005
6838376 Method of forming semiconductor wiring structures Jan. 4, 2005
6822303 Titanium boride gate electrode and interconnect Nov. 23, 2004
6821874 Method for depositing tungsten silicide film and method for preparing gate electrode/wiring Nov. 23, 2004
6800543 Semiconductor device having a low-resistance gate electrode Oct. 5, 2004
6798026 Conductor layer nitridation Sep. 28, 2004
6797559 Method of fabricating semiconductor device having metal conducting layer Sep. 28, 2004
6774442 Semiconductor device and CMOS transistor Aug. 10, 2004
6770571 Barrier in gate stack for improved gate dielectric integrity Aug. 3, 2004

1 2 3 4 5

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