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Class Information
Number: 257/E29.156
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrodes (epo) > Of specified material (epo) > Electrodes for igfet (epo) > Silicon gate conductor material (epo) > Multiple silicon layers > Including silicide layer contacting silicon layer (epo)
Description: This subclass is indented under subclass E29.155. This subclass is substantially the same in scope as ECLA classification H01L29/49C2B.










Patents under this class:
1 2 3 4 5 6 7 8

Patent Number Title Of Patent Date Issued
8692335 Source/drain region, contact hole and method for forming the same Apr. 8, 2014
8569170 Manufacturing method of semiconductor device comprising silicide layer with varied thickness Oct. 29, 2013
8482043 Method for improving transistor performance through reducing the salicide interface resistance Jul. 9, 2013
8435889 Methods of forming CoSi.sub.2, methods of forming field effect transistors, and methods of forming conductive contacts May. 7, 2013
8367533 Semiconductor devices including doped metal silicide patterns and related methods of forming such devices Feb. 5, 2013
8368221 Hybrid contact structure with low aspect ratio contacts in a semiconductor device Feb. 5, 2013
8350344 Semiconductor device and method of fabricating the same Jan. 8, 2013
8344461 Solid-state imaging device and manufacturing method for the same Jan. 1, 2013
8330235 Method to reduce mol damage on NiSi Dec. 11, 2012
8299455 Semiconductor structures having improved contact resistance Oct. 30, 2012
8242567 Semiconductor device and manufacturing method thereof Aug. 14, 2012
8187970 Process for forming cobalt and cobalt silicide materials in tungsten contact applications May. 29, 2012
8168538 Buried silicide structure and method for making May. 1, 2012
8039907 Semiconductor device and method for fabricating the same Oct. 18, 2011
8039382 Method for forming self-aligned metal silicide contacts Oct. 18, 2011
7973367 Semiconductor device and manufacturing method thereof Jul. 5, 2011
7964923 Structure and method of creating entirely self-aligned metallic contacts Jun. 21, 2011
7943499 FUSI integration method using SOG as a sacrificial planarization layer May. 17, 2011
7939896 SOI substrate contact with extended silicide area May. 10, 2011
7923759 Metal gate semiconductor device and manufacturing method Apr. 12, 2011
7911007 Semiconductor device and method of manufacturing the same Mar. 22, 2011
7911004 Semiconductor device and manufacturing method of the same Mar. 22, 2011
7906815 Increased reliability for a contact structure to connect an active region with a polysilicon line Mar. 15, 2011
7884399 Semiconductor device and method of fabricating the same Feb. 8, 2011
7808102 Multi-die DC-DC boost power converter with efficient packaging Oct. 5, 2010
7795124 Methods for contact resistance reduction of advanced CMOS devices Sep. 14, 2010
7759741 Method and apparatus for forming nickel silicide with low defect density in FET devices Jul. 20, 2010
7759742 Metal oxide semiconductor transistor Jul. 20, 2010
7749847 CMOS integration scheme employing a silicide electrode and a silicide-germanide alloy electrode Jul. 6, 2010
7732312 FUSI integration method using SOG as a sacrificial planarization layer Jun. 8, 2010
7732870 Eliminating metal-rich silicides using an amorphous Ni alloy silicide structure Jun. 8, 2010
7732313 FUSI integration method using SOG as a sacrificial planarization layer Jun. 8, 2010
7714408 Semiconductor device and manufacturing method thereof May. 11, 2010
7709911 Semiconductor device having silicide transistors and non-silicide transistors formed on the same substrate and method for fabricating the same May. 4, 2010
7679149 Method of removing refractory metal layers and of siliciding contact areas Mar. 16, 2010
7675121 SOI substrate contact with extended silicide area Mar. 9, 2010
7663191 Semiconductor device and manufacturing method thereof with rounded gate including a silicide on the top and at the corners Feb. 16, 2010
7618891 Method for forming self-aligned metal silicide contacts Nov. 17, 2009
7576400 Circuitry and gate stacks Aug. 18, 2009
7541653 Mask ROM devices of semiconductor devices and method of forming the same Jun. 2, 2009
7476943 Semiconductor device having diffusion layers as bit lines and method for manufacturing the same Jan. 13, 2009
7462915 Method and apparatus for increase strain effect in a transistor channel Dec. 9, 2008
7452777 Self-aligned trench MOSFET structure and method of manufacture Nov. 18, 2008
7449410 Methods of forming CoSi.sub.2, methods of forming field effect transistors, and methods of forming conductive contacts Nov. 11, 2008
7427546 Transistor device and method for manufacturing the same Sep. 23, 2008
7411254 Semiconductor substrate Aug. 12, 2008
7332420 Method for manufacturing semiconductor device Feb. 19, 2008
7329927 Integrated circuit devices having uniform silicide junctions Feb. 12, 2008
7327001 PMOS transistor with compressive dielectric capping layer Feb. 5, 2008
7307871 SRAM cell design with high resistor CMOS gate structure for soft error rate improvement Dec. 11, 2007

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