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Class Information
Number: 257/E29.155
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrodes (epo) > Of specified material (epo) > Electrodes for igfet (epo) > Silicon gate conductor material (epo) > Multiple silicon layers
Description: This subclass is indented under subclass E29.154. This subclass is substantially the same in scope as ECLA classification H01L29/49C2
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 8609479 |
Gated-varactors |
Dec. 17, 2013 |
| 8373221 |
Nanocluster charge storage device |
Feb. 12, 2013 |
| 8278644 |
Switching device and nonvolatile memory device |
Oct. 2, 2012 |
| 8237221 |
Semiconductor device and method of manufacturing semiconductor device |
Aug. 7, 2012 |
| 8148730 |
Semiconductor device and method for manufacturing semiconductor device |
Apr. 3, 2012 |
| 7960256 |
Use of CL2 and/or HCL during silicon epitaxial film formation |
Jun. 14, 2011 |
| 7960764 |
Semiconductor device manufacturing method and semiconductor device |
Jun. 14, 2011 |
| 7851847 |
Flash memory device and method of erasing the same |
Dec. 14, 2010 |
| 7714366 |
CMOS transistor with a polysilicon gate electrode having varying grain size |
May. 11, 2010 |
| 7566644 |
Method for forming gate electrode of semiconductor device |
Jul. 28, 2009 |
| 7557403 |
Double gate transistors having at least two polysilicon patterns on a thin body used as active region and methods of forming the same |
Jul. 7, 2009 |
| 7075145 |
Poly-sealed silicide trench gate |
Jul. 11, 2006 |
| 7042055 |
Semiconductor device and manufacturing thereof |
May. 9, 2006 |
| 7026218 |
Use of indium to define work function of p-type doped polysilicon |
Apr. 11, 2006 |
| 7009253 |
Method and apparatus for preventing microcircuit thermo-mechanical damage during an ESD event |
Mar. 7, 2006 |
| 6995434 |
Semiconductor device and method of fabricating the same |
Feb. 7, 2006 |
| 6991999 |
Bi-layer silicon film and method of fabrication |
Jan. 31, 2006 |
| 6982433 |
Gate-induced strain for MOS performance improvement |
Jan. 3, 2006 |
| 6972232 |
Method of manufacturing a semiconductor device |
Dec. 6, 2005 |
| 6969888 |
Planarized and silicided trench contact |
Nov. 29, 2005 |
| 6967384 |
Structure and method for ultra-small grain size polysilicon |
Nov. 22, 2005 |
| 6963100 |
Semiconductor device having gate electrode in which depletion layer can be generated |
Nov. 8, 2005 |
| 6958275 |
MOSFET power transistors and methods |
Oct. 25, 2005 |
| 6911384 |
Gate structure with independently tailored vertical doping profile |
Jun. 28, 2005 |
| 6893948 |
Method of reducing polysilicon depletion in a polysilicon gate electrode by depositing polysilicon of varying grain size |
May. 17, 2005 |
| 6875676 |
Methods for producing a highly doped electrode for a field effect transistor |
Apr. 5, 2005 |
| 6872972 |
Method for forming silicon film with changing grain size by thermal process |
Mar. 29, 2005 |
| 6861701 |
Trench power MOSFET with planarized gate bus |
Mar. 1, 2005 |
| 6849899 |
High speed trench DMOS |
Feb. 1, 2005 |
| 6838695 |
CMOS device structure with improved PFET gate electrode |
Jan. 4, 2005 |
| 6821868 |
Method of forming nitrogen enriched gate dielectric with low effective oxide thickness |
Nov. 23, 2004 |
| 6809017 |
Interfacial layer for gate electrode and high-k dielectric layer and methods of fabrication |
Oct. 26, 2004 |
| 6803611 |
Use of indium to define work function of p-type doped polysilicon |
Oct. 12, 2004 |
| 6794714 |
Transistor and method for fabricating the same |
Sep. 21, 2004 |
| 6791141 |
Semiconductor constructions comprising stacks with floating gates therein |
Sep. 14, 2004 |
| 6780741 |
Method of forming a novel gate electrode structure comprised of a silicon-germanium layer located between random grained polysilicon layers |
Aug. 24, 2004 |
| 6762454 |
Stacked polysilicon layer for boron penetration inhibition |
Jul. 13, 2004 |
| 6730976 |
Multilayer gate electrode structure with tilted on implantation |
May. 4, 2004 |
| 6720626 |
Semiconductor device having improved gate structure |
Apr. 13, 2004 |
| 6703672 |
Polysilicon/amorphous silicon composite gate electrode |
Mar. 9, 2004 |
| 6693313 |
Field effect transistors, field effect transistor assemblies, and integrated circuitry |
Feb. 17, 2004 |
| 6686637 |
Gate structure with independently tailored vertical doping profile |
Feb. 3, 2004 |
| 6682992 |
Method of controlling grain size in a polysilicon layer and in semiconductor devices having polysilicon structures |
Jan. 27, 2004 |
| 6670263 |
Method of reducing polysilicon depletion in a polysilicon gate electrode by depositing polysilicon of varying grain size |
Dec. 30, 2003 |
| 6653699 |
Polysilicon/Amorphous silicon gate structures for integrated circuit field effect transistors |
Nov. 25, 2003 |
| 6649518 |
Method of forming a conductive contact |
Nov. 18, 2003 |
| 6642592 |
Semiconductor device and method for fabricating same |
Nov. 4, 2003 |
| 6627951 |
High speed trench DMOS |
Sep. 30, 2003 |
| 6620713 |
Interfacial layer for gate electrode and high-k dielectric layer and methods of fabrication |
Sep. 16, 2003 |
| 6620671 |
Method of fabricating transistor having a single crystalline gate conductor |
Sep. 16, 2003 |
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