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Class Information
Number: 257/E29.154
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrodes (epo) > Of specified material (epo) > Electrodes for igfet (epo) > Silicon gate conductor material (epo)
Description: This subclass is indented under subclass E29.15. This subclass is substantially the same in scope as ECLA classification H01L29/49C.










Sub-classes under this class:

Class Number Class Name Patents
257/E29.155 Multiple silicon layers 190


Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
8450813 Fin transistor structure and method of fabricating the same May. 28, 2013
8445973 Fin transistor structure and method of fabricating the same May. 21, 2013
8390042 Gate etch optimization through silicon dopant profile change Mar. 5, 2013
8362548 Contact structure for semiconductor device having trench shield electrode and method Jan. 29, 2013
8247286 Semiconductor device having transistor and method of manufacturing the same Aug. 21, 2012
8035173 CMOS transistors with differential oxygen content high-K dielectrics Oct. 11, 2011
7812413 MOSFET devices and methods for making them Oct. 12, 2010
7629191 Semiconductor device Dec. 8, 2009
7612421 Electronic device with dopant diffusion barrier and tunable work function and methods of making same Nov. 3, 2009
7598549 Semiconductor device having a silicon layer in a gate electrode Oct. 6, 2009
7042055 Semiconductor device and manufacturing thereof May. 9, 2006
7015121 Semiconductor device and method of manufacturing the same Mar. 21, 2006
6998675 Nucleation for improved flash erase characteristics Feb. 14, 2006
6963100 Semiconductor device having gate electrode in which depletion layer can be generated Nov. 8, 2005
6943116 Method for fabricating a p-channel field-effect transistor on a semiconductor substrate Sep. 13, 2005
6929991 Reliable semiconductor device and method of manufacturing the same Aug. 16, 2005
6908803 Methods for forming wordlines, transistor gates, and conductive interconnects, and wordline, transistor gate, and conductive interconnect structures Jun. 21, 2005
6849899 High speed trench DMOS Feb. 1, 2005
6833596 Semiconductor device and method of manufacturing the same Dec. 21, 2004
6830997 Semiconductor devices and methods for forming semiconductor devices Dec. 14, 2004
6787433 Semiconductor device and method of manufacturing the same Sep. 7, 2004
6777317 Method for semiconductor gate doping Aug. 17, 2004
6762451 Nucleation for improved flash erase characteristics Jul. 13, 2004
6759684 SiC semiconductor device Jul. 6, 2004
6730584 Methods for forming wordlines, transistor gates, and conductive interconnects, and wordline, transistor gate, and conductive interconnect structures May. 4, 2004
6720626 Semiconductor device having improved gate structure Apr. 13, 2004
6713824 Reliable semiconductor device and method of manufacturing the same Mar. 30, 2004
6709960 Laser anneal process for reduction of polysilicon depletion Mar. 23, 2004
6682994 Methods for transistor gate formation using gate sidewall implantation Jan. 27, 2004
6682992 Method of controlling grain size in a polysilicon layer and in semiconductor devices having polysilicon structures Jan. 27, 2004
6646326 Method and system for providing source/drain-gate spatial overlap engineering for low-power devices Nov. 11, 2003
6627951 High speed trench DMOS Sep. 30, 2003
6621114 MOS transistors with high-k dielectric gate insulator for reducing remote scattering Sep. 16, 2003
6611032 Methods for forming wordlines, transistor gates, and conductive interconnects, and wordline, transistor gate, and conductive interconnect structures Aug. 26, 2003
6566209 Method to form shallow junction transistors while eliminating shorts due to junction spiking May. 20, 2003
6566210 Method of improving gate activation by employing atomic oxygen enhanced oxidation May. 20, 2003
6566708 Trench-gate field-effect transistors with low gate-drain capacitance and their manufacture May. 20, 2003
6559037 Process for producing semiconductor device having crystallized film formed from deposited amorphous film May. 6, 2003
6545328 Semiconductor device Apr. 8, 2003
6545315 Trench DMOS transistor having reduced punch-through Apr. 8, 2003
6531750 Shallow junction transistors which eliminating shorts due to junction spiking Mar. 11, 2003
6525373 Power semiconductor device having trench gate structure and method for manufacturing the same Feb. 25, 2003
6521527 Semiconductor device and method of fabricating the same Feb. 18, 2003
6518621 Trench DMOS transistor having reduced punch-through Feb. 11, 2003
6492676 Semiconductor device having gate electrode in which depletion layer can be generated Dec. 10, 2002
6482725 Gate formation method for reduced poly-depletion and boron penetration Nov. 19, 2002
6482709 Manufacturing process of a MOS transistor Nov. 19, 2002
6475841 Transistor with shaped gate electrode and method therefor Nov. 5, 2002
6475887 Method of manufacturing semiconductor device Nov. 5, 2002
6476462 MOS-type semiconductor device and method for making same Nov. 5, 2002

1 2 3 4










 
 
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