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Class Information
Number: 257/E29.152
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrodes (epo) > Of specified material (epo) > Electrodes for igfet (epo) > With lateral structure (e.g., poly-silicon gate with lateral doping variation or with lateral composition variation or characterized by sidewalls being composed of conductive, resistivity) (epo)
Description: This subclass is indented under subclass E29.15. This subclass is substantially the same in scope as ECLA classification H01L29/49F.

Patents under this class:
1 2 3 4 5 6 7 8

Patent Number Title Of Patent Date Issued
8569168 Dual-metal self-aligned wires and vias Oct. 29, 2013
8551849 Semiconductor device and method of manufacturing the same Oct. 8, 2013
8362548 Contact structure for semiconductor device having trench shield electrode and method Jan. 29, 2013
8361869 Method for manufacturing suspended fin and gate-all-around field effect transistor Jan. 29, 2013
8247286 Semiconductor device having transistor and method of manufacturing the same Aug. 21, 2012
8134189 Semiconductor device and method of manufacturing the same Mar. 13, 2012
8093658 Electronic device with asymmetric gate strain Jan. 10, 2012
7989900 Semiconductor structure including gate electrode having laterally variable work function Aug. 2, 2011
7977705 Low-cost substrates having high-resistivity properties and methods for their manufacture Jul. 12, 2011
7947589 FinFET formation with a thermal oxide spacer hard mask formed from crystalline silicon layer May. 24, 2011
7943462 Transistor including a high-K metal gate electrode structure formed prior to drain/source regions on the basis of a sacrificial carbon spacer May. 17, 2011
7919821 Method and integrated circuits capable of saving layout areas Apr. 5, 2011
7847335 Non-volatile memory device having a generally L-shaped cross-section sidewall SONOS Dec. 7, 2010
7842981 Semiconductor device and method of manufacturing the same Nov. 30, 2010
7838371 Method of manufacturing a FET gate Nov. 23, 2010
7816744 Gate electrodes of HVMOS devices having non-uniform doping concentrations Oct. 19, 2010
7781288 Semiconductor structure including gate electrode having laterally variable work function Aug. 24, 2010
7732282 Transistor of the I-MOS type comprising two independent gates and method of using such a transistor Jun. 8, 2010
7732838 Semiconductor device and manufacturing method thereof Jun. 8, 2010
7671358 Plasma implantated impurities in junction region recesses Mar. 2, 2010
7598572 Silicided polysilicon spacer for enhanced contact area Oct. 6, 2009
7595531 Semiconductor device Sep. 29, 2009
7563682 LDMOS transistor device, integrated circuit, and fabrication method thereof Jul. 21, 2009
7456469 Semiconductor device having cell transistor with recess channel structure Nov. 25, 2008
7391084 LDMOS transistor device, integrated circuit, and fabrication method thereof Jun. 24, 2008
7323747 Lateral semiconductor device Jan. 29, 2008
7306995 Reduced hydrogen sidewall spacer oxide Dec. 11, 2007
7265015 Use of chlorine to fabricate trench dielectric in integrated circuits Sep. 4, 2007
7045852 Floating gate memory cells with increased coupling radio May. 16, 2006
7042055 Semiconductor device and manufacturing thereof May. 9, 2006
7042033 ULSI MOS with high dielectric constant gate insulator May. 9, 2006
7033919 Fabrication of dual work-function metal gate structure for complementary field effect transistors Apr. 25, 2006
7033897 Encapsulated spacer with low dielectric constant material to reduce the parasitic capacitance between gate and drain in CMOS technology Apr. 25, 2006
7026202 Inverse-T gate structure using damascene processing Apr. 11, 2006
7012298 Non-volatile memory device Mar. 14, 2006
7008831 Semiconductor device and manufacturing method thereof Mar. 7, 2006
7005710 Transistors having controlled conductive spacers, uses of such transistors and methods of making such transistors Feb. 28, 2006
7005393 Method of fabricating a semiconductor device containing nitrogen in an oxide film Feb. 28, 2006
7001817 Method for fabricating a semiconductor device Feb. 21, 2006
7001818 MIS semiconductor device and manufacturing method thereof Feb. 21, 2006
6979658 Method of fabricating a semiconductor device containing nitrogen in a gate oxide film Dec. 27, 2005
6975006 Semiconductor device with modified channel compressive stress Dec. 13, 2005
6965123 Transistor with variable electron affinity gate and methods of fabrication and use Nov. 15, 2005
6963100 Semiconductor device having gate electrode in which depletion layer can be generated Nov. 8, 2005
6953732 Method of manufacturing a semiconductor device including a mosfet with nitride sidewalls Oct. 11, 2005
6949436 Composite spacer liner for improved transistor performance Sep. 27, 2005
6917068 Semiconductor device having conductive structures formed near a gate electrode Jul. 12, 2005
6906366 Single transistor ferroelectric transistor structure with high-k insulator Jun. 14, 2005
6902945 Tapered threshold reset FET for CMOS imagers Jun. 7, 2005
6903412 Trench MIS device with graduated gate oxide layer Jun. 7, 2005

1 2 3 4 5 6 7 8

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