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Class Information
Number: 257/E29.15
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrodes (epo) > Of specified material (epo) > Electrodes for igfet (epo)
Description: This subclass is indented under subclass E29.139. This subclass is substantially the same in scope as ECLA classification H01L29/49.










Sub-classes under this class:

Class Number Class Name Patents
257/E29.158 Elemental metal gate conductor material (e.g., w, mo) (epo) 167
257/E29.151 For tft (epo) 956
257/E29.16 Gate conductor material being compound or alloy material (e.g., organic material, tin, mosi 2 ) (epo) 254
257/E29.162 Insulating materials for igfet (epo) 703
257/E29.154 Silicon gate conductor material (epo) 175
257/E29.152 With lateral structure (e.g., poly-silicon gate with lateral doping variation or with lateral composition variation or characterized by sidewalls being composed of conductive, resistivity) (epo) 372


Patents under this class:
1 2

Patent Number Title Of Patent Date Issued
8652890 Methods for fabricating integrated circuits with narrow, metal filled openings Feb. 18, 2014
8169040 Semiconductor device and method for manufacturing the same May. 1, 2012
8115198 Array of differentiated FETS having a nanotube or nanowire channel and corresponding electronic device, for the detection of analytes Feb. 14, 2012
8076735 Semiconductor device with trench of various widths Dec. 13, 2011
7847367 Semiconductor devices having a gate electrode and methods of fabricating the same Dec. 7, 2010
7737511 Semiconductor device and method of manufacturing the same Jun. 15, 2010
7732838 Semiconductor device and manufacturing method thereof Jun. 8, 2010
7656049 CMOS device with asymmetric gate strain Feb. 2, 2010
7550796 Germanium semiconductor device and method of manufacturing the same Jun. 23, 2009
7422953 Semiconductor device and method of manufacturing the same Sep. 9, 2008
7250630 Electronic devices formed of high-purity molybdenum oxide Jul. 31, 2007
6969870 Semiconductor device having an amorphous silicon-germanium gate electrode Nov. 29, 2005
6963100 Semiconductor device having gate electrode in which depletion layer can be generated Nov. 8, 2005
6949769 Suppression of MOSFET gate leakage current Sep. 27, 2005
6914311 Semiconductor device having doped gate electrode Jul. 5, 2005
6905976 Structure and method of forming a notched gate field effect transistor Jun. 14, 2005
6864537 Thick gate oxide transistor and electrostatic discharge protection utilizing thick gate oxide transistors Mar. 8, 2005
6861711 Thick gate oxide transistor and electrostatic discharge protection utilizing thick gate oxide transistors Mar. 1, 2005
6861684 Method of fabricating a vertical insulated gate transistor with low overlap of the gate on the source and the drain, and an integrated circuit including this kind of transistor Mar. 1, 2005
6841445 Method of making floating gate non-volatile memory cell with low erasing voltage having double layer gate dielectric Jan. 11, 2005
6830953 Suppression of MOSFET gate leakage current Dec. 14, 2004
6822277 Semiconductor device and method for manufacturing the same Nov. 23, 2004
6797641 Gate oxide stabilization by means of germanium components in gate conductor Sep. 28, 2004
6787805 Semiconductor device and manufacturing method Sep. 7, 2004
6710382 Semiconductor device and method for fabricating the same Mar. 23, 2004
6710394 Method of making floating gate non-volatile memory cell with low erasing voltage having double layer gate dielectric Mar. 23, 2004
6589827 Semiconductor device and method for fabricating the same Jul. 8, 2003
6498085 Semiconductor device and method of fabricating the same Dec. 24, 2002
6492676 Semiconductor device having gate electrode in which depletion layer can be generated Dec. 10, 2002
6441464 Gate oxide stabilization by means of germanium components in gate conductor Aug. 27, 2002
6423632 Semiconductor device and a process for forming the same Jul. 23, 2002
6399444 Method of making floating gate non-volatile memory cell with low erasing voltage Jun. 4, 2002
6399469 Fabrication of a notched gate structure for a field effect transistor using a single patterning and etch process Jun. 4, 2002
6214681 Process for forming polysilicon/germanium thin films without germanium outgassing Apr. 10, 2001
6159805 Semiconductor electronic device with autoaligned polysilicon and silicide control terminal Dec. 12, 2000
6147380 Floating gate non-volatile memory cell with low erasing voltage and having different potential barriers Nov. 14, 2000
6093243 Semiconductor device and its fabricating method Jul. 25, 2000
6066880 Semiconductor device May. 23, 2000
6066872 Semiconductor device and its fabricating method May. 23, 2000
6054731 Floating gate non-volatile memory cell with low erasing voltage and manufacturing method Apr. 25, 2000
5960271 Short channel self-aligned VMOS field effect transistor Sep. 28, 1999
5879447 Semiconductor device and its fabricating method Mar. 9, 1999
5831319 Conductive spacer lightly doped drain (LDD) for hot carrier effect (HCE) control Nov. 3, 1998
5811335 Semiconductor electronic device with autoaligned polysilicon and silicide control terminal Sep. 22, 1998
5808340 Short channel self aligned VMOS field effect transistor Sep. 15, 1998
5786619 Depletion mode power MOSFET with refractory gate and method of making same Jul. 28, 1998
5689125 Cadmium sulfide interface layers for improving III-V semiconductor device performance and characteristics Nov. 18, 1997
5663586 Fet device with double spacer Sep. 2, 1997
5652156 Layered polysilicon deposition method Jul. 29, 1997
5646056 Method of fabricating ultra-large-scale integration metal-oxide semiconductor field effect transistor Jul. 8, 1997

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