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Class Information
Number: 257/E29.149
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrodes (epo) > Of specified material (epo) > Schottky barrier electrodes (epo) > On group iii-v material (epo)
Description: This subclass is indented under subclass E29.148. This subclass is substantially the same in scope as ECLA classification H01L29/47B.










Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
8575656 Semiconductor device having nitride layers Nov. 5, 2013
8476731 Nitride semiconductor diode Jul. 2, 2013
8476125 Fabrication technique for high frequency, high power group III nitride electronic devices Jul. 2, 2013
8368172 Fused buss for plating features on a semiconductor die Feb. 5, 2013
8242599 Electronic component with diffusion barrier layer Aug. 14, 2012
8207556 Group III nitride semiconductor device and epitaxial substrate Jun. 26, 2012
8183629 Stacked trench metal-oxide-semiconductor field effect transistor device May. 22, 2012
8183597 GaN semiconductor device having a high withstand voltage May. 22, 2012
7786511 Semiconductor device with Schottky and ohmic electrodes in contact with a heterojunction Aug. 31, 2010
7719055 Cascode power switch topologies May. 18, 2010
7692298 III-V nitride semiconductor device comprising a concave shottky contact and an ohmic contact Apr. 6, 2010
7687870 Laterally configured electrooptical devices Mar. 30, 2010
7633114 Non-volatile memory integrated circuit Dec. 15, 2009
7560757 Semiconductor device with a structure suitable for miniaturization Jul. 14, 2009
7557395 Trench MOSFET technology for DC-DC converter applications Jul. 7, 2009
7465978 Field effect transistor with a high breakdown voltage and method of manufacturing the same Dec. 16, 2008
7436039 Gallium nitride semiconductor device Oct. 14, 2008
7071526 Semiconductor device having Schottky junction electrode Jul. 4, 2006
7033896 Field effect transistor with a high breakdown voltage and method of manufacturing the same Apr. 25, 2006
7019336 Semiconductor device and method for manufacturing the same Mar. 28, 2006
6967360 Pseudomorphic high electron mobility transistor with Schottky electrode including lanthanum and boron, and manufacturing method thereof Nov. 22, 2005
6949401 Semiconductor component and method for producing the same Sep. 27, 2005
6852612 Semiconductor device and method for fabricating the same Feb. 8, 2005
6822307 Semiconductor triode device having a compound-semiconductor channel layer Nov. 23, 2004
6809352 Palladium silicide (PdSi) schottky electrode for gallium nitride semiconductor devices Oct. 26, 2004
6787910 Schottky structure in GaAs semiconductor device Sep. 7, 2004
6768146 III-V nitride semiconductor device, and protection element and power conversion apparatus using the same Jul. 27, 2004
6656823 Semiconductor device with schottky contact and method for forming the same Dec. 2, 2003
6605832 Semiconductor structures having reduced contact resistance Aug. 12, 2003
6521998 Electrode structure for nitride III-V compound semiconductor devices Feb. 18, 2003
6521961 Semiconductor device using a barrier layer between the gate electrode and substrate and method therefor Feb. 18, 2003
6501145 Semiconductor component and method for producing the same Dec. 31, 2002
6492669 Semiconductor device with schottky electrode having high schottky barrier Dec. 10, 2002
6452244 Film-like composite structure and method of manufacture thereof Sep. 17, 2002
6410460 Technology for thermodynamically stable contacts for binary wide band gap semiconductors Jun. 25, 2002
6380552 Low turn-on voltage InP Schottky device and method Apr. 30, 2002
6316342 Low turn-on voltage indium phosphide Schottky device and method Nov. 13, 2001
6235617 Semiconductor device and its manufacturing method May. 22, 2001
6225200 Rare-earth element-doped III-V compound semiconductor schottky diodes and device formed thereby May. 1, 2001
6200885 III-V semiconductor structure and its producing method Mar. 13, 2001
6197667 Structure and method for manufacturing Group III-V composite Schottky contacts enhanced by a sulphur fluoride/phosphorus fluoride layer Mar. 6, 2001
6146931 Method of forming a semiconductor device having a barrier layer interposed between the ohmic contact and the schottky contact Nov. 14, 2000
6111273 Semiconductor device and its manufacturing method Aug. 29, 2000
6100547 Field effect type semiconductor device and method of fabricating the same Aug. 8, 2000
6087704 Structure and method for manufacturing group III-V composite Schottky contacts enhanced by a sulphur fluoride/phosphorus fluoride layer Jul. 11, 2000
6011281 Semiconductor device having an ohmic contact and a Schottky contact, with a barrier layer interposed between the ohmic contact and the Schottky contact Jan. 4, 2000
5994753 Semiconductor device and method for fabricating the same Nov. 30, 1999
5949095 Enhancement type MESFET Sep. 7, 1999
5923072 Semiconductor device with metallic protective film Jul. 13, 1999
5912480 Heterojunction semiconductor device Jun. 15, 1999

1 2 3 4










 
 
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