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Class Information
Number: 257/E29.148
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrodes (epo) > Of specified material (epo) > Schottky barrier electrodes (epo)
Description: This subclass is indented under subclass E29.139. This subclass is substantially the same in scope as ECLA classification H01L29/47.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7402852 |
Charge coupled device having a back electrode |
Jul. 22, 2008 |
| 7402865 |
Semiconductor device including a contact connected to the body and method of manufacturing the same |
Jul. 22, 2008 |
| 7388271 |
Schottky diode with minimal vertical current flow |
Jun. 17, 2008 |
| 7312510 |
Device using ambipolar transport in SB-MOSFET and method for operating the same |
Dec. 25, 2007 |
| 7307310 |
Semiconductor device and method for manufacturing same |
Dec. 11, 2007 |
| 7304329 |
Field effect transistor |
Dec. 4, 2007 |
| 7238976 |
Schottky barrier rectifier and method of manufacturing the same |
Jul. 3, 2007 |
| 7067361 |
Methods of fabricating silicon carbide metal-semiconductor field effect transistors |
Jun. 27, 2006 |
| 7033896 |
Field effect transistor with a high breakdown voltage and method of manufacturing the same |
Apr. 25, 2006 |
| 6972470 |
Dual metal Schottky diode |
Dec. 6, 2005 |
| 6949401 |
Semiconductor component and method for producing the same |
Sep. 27, 2005 |
| 6949787 |
Transistor having high dielectric constant gate insulating layer and source and drain forming Schottky contact with substrate |
Sep. 27, 2005 |
| 6936850 |
Semiconductor device made from silicon carbide with a Schottky contact and an ohmic contact made from a nickel-aluminum material |
Aug. 30, 2005 |
| 6887747 |
Method of forming a MISFET having a schottky junctioned silicide |
May. 3, 2005 |
| 6833556 |
Insulated gate field effect transistor having passivated schottky barriers to the channel |
Dec. 21, 2004 |
| 6784114 |
Monatomic layer passivation of semiconductor surfaces |
Aug. 31, 2004 |
| 6784035 |
Field effect transistor having source and/or drain forming Schottky or Schottky-like contact with strained semiconductor substrate |
Aug. 31, 2004 |
| 6746909 |
Transistor, semiconductor device and manufacturing method of semiconductor device |
Jun. 8, 2004 |
| 6686616 |
Silicon carbide metal-semiconductor field effect transistors |
Feb. 3, 2004 |
| 6667508 |
Nonvolatile memory having a split gate |
Dec. 23, 2003 |
| 6548875 |
Sub-tenth micron misfet with source and drain layers formed over source and drains, sloping away from the gate |
Apr. 15, 2003 |
| 6544674 |
Stable electrical contact for silicon carbide devices |
Apr. 8, 2003 |
| 6501145 |
Semiconductor component and method for producing the same |
Dec. 31, 2002 |
| 6483164 |
Schottky barrier diode |
Nov. 19, 2002 |
| 6452244 |
Film-like composite structure and method of manufacture thereof |
Sep. 17, 2002 |
| 6441463 |
IGBT, control circuit, and protection circuit on same substrate |
Aug. 27, 2002 |
| 6413829 |
Field effect transistor in SOI technology with schottky-contact extensions |
Jul. 2, 2002 |
| 6410460 |
Technology for thermodynamically stable contacts for binary wide band gap semiconductors |
Jun. 25, 2002 |
| 6388272 |
W/WC/TAC ohmic and rectifying contacts on SiC |
May. 14, 2002 |
| 6365494 |
Method for producing an ohmic contact |
Apr. 2, 2002 |
| 6362495 |
Dual-metal-trench silicon carbide Schottky pinch rectifier |
Mar. 26, 2002 |
| 6273950 |
SiC device and method for manufacturing the same |
Aug. 14, 2001 |
| 6222267 |
Semiconductor device and manufacturing thereof |
Apr. 24, 2001 |
| 6214107 |
Method for manufacturing a SiC device |
Apr. 10, 2001 |
| 6184564 |
Schottky diode with adjusted barrier height and process for its manufacture |
Feb. 6, 2001 |
| 6150246 |
Method of making Os and W/WC/TiC ohmic and rectifying contacts on SiC |
Nov. 21, 2000 |
| 6087702 |
Rare-earth schottky diode structure |
Jul. 11, 2000 |
| 5929523 |
Os rectifying Schottky and ohmic junction and W/WC/TiC ohmic contacts on SiC |
Jul. 27, 1999 |
| 5888891 |
Process for manufacturing a schottky diode with enhanced barrier height and high thermal stability |
Mar. 30, 1999 |
| 5801444 |
Multilevel electronic structures containing copper layer and copper-semiconductor layers |
Sep. 1, 1998 |
| 5789311 |
Manufacturing method of SiC Schottky diode |
Aug. 4, 1998 |
| 5767536 |
II-VI group compound semiconductor device |
Jun. 16, 1998 |
| 5760462 |
Metal, passivating layer, semiconductor, field-effect transistor |
Jun. 2, 1998 |
| 5693569 |
Method of forming silicon carbide trench mosfet with a schottky electrode |
Dec. 2, 1997 |
| 5644156 |
Porous silicon photo-device capable of photoelectric conversion |
Jul. 1, 1997 |
| 5635735 |
Field effect transistor with an improved Schottky gate structure |
Jun. 3, 1997 |
| 5614749 |
Silicon carbide trench MOSFET |
Mar. 25, 1997 |
| 5500393 |
Method for fabricating a schottky junction |
Mar. 19, 1996 |
| 5476812 |
Semiconductor heterojunction structure |
Dec. 19, 1995 |
| 5471072 |
Platinum and platinum silicide contacts on .beta.-silicon carbide |
Nov. 28, 1995 |
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